Low viscosity precursor compositions and methods for the deposition of conductive electronic features
A precursor composition for the deposition and formation of an electrical feature such as a conductive feature. The precursor composition advantageously has a low viscosity enabling deposition using direct-write tools. The precursor composition also has a low conversion temperature, enabling the deposition and conversion to an electrical feature on low temperature substrates. A particularly preferred precursor composition includes silver metal for the formation of highly conductive silver features.
1 . A process for forming a flat panel display conductive feature, comprising:
(a) direct printing a precursor composition onto a substrate in multiple passes, the precursor composition comprising at least one of metallic particles comprising a metal or a metal precursor compound to the metal; and
(b) heating the precursor composition to form the flat panel display conductive feature on the substrate, wherein the flat panel display conductive feature has a thickness greater than 1 μm.
2 . The process of claim 1 , wherein the direct printing comprises syringe printing.
3 . The process of claim 1 , wherein the direct printing comprises aerosol jet deposition.
4 . The process of claim 1 , wherein the direct printing comprises ink jet printing.
5 . The process of claim 4 , wherein the flat panel display conductive feature has a thickness greater than 5 μm.
6 . The process of claim 4 , wherein the heating occurs between the multiple passes.
7 . The process of claim 4 , wherein the heating occurs after the multiple passes.
8 . The process of claim 4 , wherein the heating comprises heating in air at from about 450° C. to 600° C.
9 . The process of claim 4 , wherein the conductivity of the flat panel display conductive feature is no less than 10 percent the conductivity of the equivalent pure metal.
10 . The process of claim 4 , wherein the flat panel display conductive feature has a resistivity that is not greater than 4 times the resistivity of the equivalent pure metal.
11 . The process of claim 4 , wherein the flat panel display conductive feature has a resistivity that is not greater than 2 times the resistivity of the equivalent pure metal.
12 . The process of claim 4 , wherein the precursor composition further comprises metal oxide particles.
13 . The process of claim 4 , wherein the precursor composition further comprises glass particles.
14 . The process of claim 4 , wherein the precursor composition comprises the metal precursor compound.
15 . The process of claim 14 , wherein the metal precursor compound is a precursor to a metal selected from the group consisting of silver, palladium, copper, gold, platinum and nickel.
16 . The process of claim 4 , wherein the precursor composition comprises the metallic particles.
17 . The process of claim 16 , wherein the metallic particles comprising a metal selected from the group consisting of silver, palladium, copper, gold, platinum and nickel.
18 . The process of claim 16 , wherein the metallic particles have a volume median particle size of not greater than 100 nm.
19 . The process of claim 16 , wherein the metallic particles have a volume median particle size of not greater than 0.3 μm.
20 . The process of claim 19 , wherein the metallic particles comprise a cap or coating thereon.
21 . The process of claim 20 , wherein the cap or coating comprises an inorganic cap or coating.
22 . The process of claim 20 , wherein the cap or coating comprises silica.
23 . The process of claim 20 , wherein the cap or coating comprises glass.
24 . The process of claim 20 , wherein the cap or coating comprises an organic cap or coating.
25 . The process of claim 20 , wherein the cap or coating comprises a polymer.
26 . The process of claim 20 , wherein the cap or coating comprises an intrinsically conductive polymer, a sulfonated perfluorohydrocarbon polymer, polystyrene, polystyrene/methacrylate, sodium bis(2-ethylhexyl) sulfosuccinate, tetra-n-octyl-ammonium bromide or an alkane thiolate.
27 . The process of claim 20 , wherein the cap or coating comprises PVP.
28 . The process of claim 19 , wherein at least 80 volume percent of the metallic particles are not larger than twice the average particle size.
29 . The process of claim 4 , wherein the substrate comprises glass.
30 . The process of claim 4 , wherein the substrate comprises polymer.
31 . The process of claim 4 , wherein the flat panel display conductive feature comprises an electrode.
32 . The process of claim 4 , wherein the flat panel display conductive feature comprises a bus line.
33 . The process of claim 4 , wherein the flat panel display conductive feature comprises a transparent conductive feature.
34 . The process of claim 4 , wherein the flat panel display conductive feature comprises indium-tin oxide or antimony-tin oxide.
35 . The process of claim 4 , wherein the flat panel display conductive feature has a width less than 200 μm.
36 . The process of claim 4 , wherein the flat panel display conductive feature has a width less than 100 μm.
37 . The process of claim 4 , wherein the flat panel display conductive feature comprises a metal-glass composition.
38 . The process of claim 4 , wherein the process further comprises high shear mixing the precursor composition.
39 . The process of claim 4 , wherein the process further comprises surface modifying the substrate with a laser.