Precursor compositions for the deposition of passive electronic features
Precursor compositions for the fabrication of electronic features such as resistors and capacitors. The precursor compositions are formulated to have a low conversion temperature, such as not greater than about 350° C., thereby enabling the fabrication of such electronic features on a variety of substrates, including organic substrates such as polymer substrates.
1 . A process for forming a resistive feature on a flexible substrate, comprising:
(a) direct printing a resistor precursor composition onto the flexible substrate; and
(b) heating the resistor precursor composition to form the resistive feature on the flexible substrate.
2 . The process of claim 1 , wherein the direct printing comprises syringe printing.
3 . The process of claim 1 , wherein the direct printing comprises aerosol jet deposition.
4 . The process of claim 1 , wherein the direct printing comprises ink jet printing.
5 . The process of claim 4 , wherein the direct printing occurs in multiple passes.
6 . The process of claim 1 , wherein the resistor precursor composition comprises metal oxide particles.
7 . The process of claim 1 , wherein the resistor precursor composition comprises glass particles.
8 . The process of claim 4 , wherein the resistor precursor composition comprises at least one of resistive particles comprising a resistive material or a molecular precursor to a resistive phase.
9 . The process of claim 8 , wherein the resistive material or resistive phase is selected from the group consisting of semiconducting oxides, ruthenium oxide, metal ruthenates including rutile, pyrochlore and perovskite phases of ruthenium, indium tin oxide, tin oxide, antimony oxide and zinc oxide.
10 . The process of claim 8 , wherein the resistor precursor composition comprises the resistive particles comprising the resistive material, the resistive particles having an average particle size of not greater than about 100 nm.
11 . The process of claim 4 , wherein the resistor precursor composition comprises a molecular precursor to an insulative phase and a powder of a resistive material.
12 . The process of claim 4 , wherein the resistor precursor composition comprises a molecular precursor to a resistive phase and a powder of an insulative material.
13 . The process of claim 4 , wherein the resistor precursor composition comprises at least one of metallic particles comprising a metal or a molecular precursor compound to the metal.
14 . The process of claim 13 , wherein the metal is selected from the group consisting of silver, palladium, copper, gold, platinum and nickel.
15 . The process of claim 13 , wherein the resistor precursor composition further comprises at least one of insulating particles comprising an insulating material or a molecular precursor to an insulating phase.
16 . The process of claim 15 , wherein the insulating material or insulating phase is selected from the group consisting of silica, alumina, titania and a glass.
17 . The process of claim 15 , wherein the insulating precursor composition comprises the insulating particles comprising the insulating material, the insulating particles having an average particle size of not greater than about 100 nm.
18 . The process of claim 13 , wherein the resistor precursor composition further comprises at least one of resistive particles comprising a resistive material or a molecular precursor to a resistive phase.
19 . The process of claim 18 , wherein the resistive material or the resistive phase is selected from the group consisting of semiconducting oxides, ruthenium oxide, metal ruthenates including rutile, pyrochlore and perovskite phases of ruthenium, indium tin oxide, tin oxide, antimony oxide and zinc oxide.
20 . The process of claim 18 , wherein the resistor precursor composition comprises the resistive particles comprising the resistive material, the resistive particles having an average particle size of not greater than about 100 nm.
21 . The process of claim 4 , wherein the resistive feature has a resistivity of at least about 10,000 μΩ-cm.
22 . The process of claim 4 , wherein the resistive feature has a resistivity of at least about 100,000 μΩ-cm.
23 . The process of claim 4 , wherein the resistive feature has a resistivity of at least about 1,000,000 μΩ-cm.
24 . The process of claim 4 , wherein the resistive feature has a width less than 2 μm.
25 . The process of claim 4 , wherein the resistive feature has a width less than 100 μm.
26 . The process of claim 4 , wherein the resistive feature has a thickness greater than 1 μm.
27 . The process of claim 4 , wherein the resistive feature has a thickness greater than 5 μm.
28 . The process of claim 4 , wherein the heating comprises heating to a temperature not greater than 300° C.
29 . The process of claim 4 , wherein the heating comprises heating to a temperature not greater than 200° C.
30 . The process of claim 4 , wherein the heating comprises heating to a temperature not greater than 100° C.
31 . The process of claim 4 , wherein the flexible substrate has a softening point of not greater than about 225° C.
32 . The process of claim 4 , wherein the flexible substrate has a softening point of not greater than about 185° C.
33 . The process of claim 4 , wherein the flexible substrate has a softening point of not greater than about 150° C.
34 . The process of claim 4 , wherein the substrate comprises a polymer.
35 . The process of claim 4 , wherein the substrate comprises a polyimide.
36 . The process of claim 4 , wherein the flexible substrate is selected from the group consisting of polyfluoronated compounds, polyimides, epoxies, polycarbonates, paper, acetate, polyester, polyethylene, polypropylene, polyvinyl chloride, acrylonitrile, butadiene, flexible fiber board, non-woven polymeric fabric, cloth, metallic foil and thin glass.
37 . The process of claim 4 , wherein the resistive feature comprises an electrode in a solar cell.
38 . The process of claim 4 , wherein the resistive feature is employed in a flat panel display.
39 . The process of claim 4 , wherein the resistive feature comprises a transparent resistive feature.
40 . The process of claim 4 , wherein the resistive feature comprises indium-tin oxide or antimony-tin oxide.
41 . The process of claim 4 , wherein the process further comprises surface modifying the substrate with a laser.
42 . A process for forming a resistive feature on a flexible substrate, the process comprising heating an ink jet printed resistor precursor composition disposed on the flexible substrate to form the resistive feature on the flexible substrate.
43 . The process of claim 42 , wherein the direct printing occurs in multiple passes.
44 . The process of claim 42 , wherein the resistor precursor composition comprises metal oxide particles.
45 . The process of claim 42 , wherein the resistor precursor composition comprises glass particles.
46 . The process of claim 42 , wherein the resistor precursor composition comprises at least one of resistive particles comprising a resistive material or a molecular precursor to a resistive phase.
47 . The process of claim 46 , wherein the resistive material or resistive phase is selected from the group consisting of semiconducting oxides, ruthenium oxide, metal ruthenates including rutile, pyrochlore and perovskite phases of ruthenium, indium tin oxide, tin oxide, antimony oxide and zinc oxide.
48 . The process of claim 46 , wherein the resistor precursor composition comprises the resistive particles comprising the resistive material, the resistive particles having an average particle size of not greater than about 100 mn.
49 . The process of claim 42 , wherein the resistor precursor composition comprises a molecular precursor to an insulative phase and a powder of a resistive material.
50 . The process of claim 42 , wherein the resistor precursor composition comprises a molecular precursor to a resistive phase and a powder of an insulative material.
51 . The process of claim 42 , wherein the resistor precursor composition comprises at least one of metallic particles comprising a metal or a molecular precursor compound to the metal.
52 . The process of claim 51 , wherein the metal is selected from the group consisting of silver, palladium, copper, gold, platinum and nickel.
53 . The process of claim 51 , wherein the resistor precursor composition further comprises at least one of insulating particles comprising an insulating material or a molecular precursor to an insulating phase.
54 . The process of claim 53 , wherein the insulating material or insulating phase is selected from the group consisting of silica, alumina, titania and a glass.
55 . The process of claim 53 , wherein the insulating precursor composition comprises the insulating particles comprising the insulating material, the insulating particles having an average particle size of not greater than about 100 nm.
56 . The process of claim 51 , wherein the resistor precursor composition further comprises at least one of resistive particles comprising a resistive material or a molecular precursor to a resistive phase.
57 . The process of claim 56 , wherein the resistive material or the resistive phase is selected from the group consisting of semiconducting oxides, ruthenium oxide, metal ruthenates including rutile, pyrochlore and perovskite phases of ruthenium, indium tin oxide, tin oxide, antimony oxide and zinc oxide.
58 . The process of claim 56 , wherein the resistor precursor composition comprises the resistive particles comprising the resistive material, the resistive particles having an average particle size of not greater than about 100 nm.
59 . The process of claim 42 , wherein the resistive feature has a resistivity of at least about 10,000 μΩ-cm.
60 . The process of claim 42 , wherein the resistive feature has a resistivity of at least about 100,000 μΩ-cm.
61 . The process of claim 42 , wherein the resistive feature has a resistivity of at least about 1,000,000 μΩ-cm.
62 . The process of claim 42 , wherein the resistive feature has a width less than 2 μm.
63 . The process of claim 42 , wherein the resistive feature has a width less than 100 μm.
64 . The process of claim 42 , wherein the resistive feature has a thickness greater than 1 μm.
65 . The process of claim 42 , wherein the resistive feature has a thickness greater than 5 μm.
66 . The process of claim 42 , wherein the heating comprises heating to a temperature not greater than 300° C.
67 . The process of claim 42 , wherein the heating comprises heating to a temperature not greater than 200° C.
68 . The process of claim 42 , wherein the heating comprises heating to a temperature not greater than 100° C.
69 . The process of claim 42 , wherein the flexible substrate has a softening point of not greater than about 225° C.
70 . The process of claim 42 , wherein the flexible substrate has a softening point of not greater than about 185° C.
71 . The process of claim 42 , wherein the flexible substrate has a softening point of not greater than about. 150° C.
72 . The process of claim 42 , wherein the substrate comprises a polymer.
73 . The process of claim 42 , wherein the substrate comprises a polyimide.
74 . The process of claim 42 , wherein the flexible substrate is selected from the group consisting of polyfluoronated compounds, polyimides, epoxies, polycarbonates, paper, acetate, polyester, polyethylene, polypropylene, polyvinyl chloride, acrylonitrile, butadiene, flexible fiber board, non-woven polymeric fabric, cloth, metallic foil and thin glass.
75 . The process of claim 42 , wherein the resistive feature comprises an electrode in a solar cell.
76 . The process of claim 42 , wherein the resistive feature is employed in a flat panel display.
77 . The process of claim 42 , wherein the resistive feature comprises a transparent resistive feature.
78 . The process of claim 42 , wherein the resistive feature comprises indium-tin oxide or antimony-tin oxide.