Semiconductor device and method for manufacturing the semiconductor device
A method is used for manufacturing a semiconductor device including a circuit-fabricated side on which an encapsulation layer is formed. The method includes the following steps. A semiconductor wafer is placed on the suction surface of a suction stage, the suction surface having a diameter in the range of 99 to 100.5% of a diameter of the semiconductor wafer. The semiconductor wafer is held on the suction surface of the suction stage by suction. A back surface of the semiconductor wafer is ground. The back surface of the semiconductor wafer is ground such that a surface roughness of the ground back surface is not greater than 5 nm. The encapsulation layer has a flexural modulus not smaller than 12 Gpa and not larger than 18 Gpa.
1 . A method for manufacturing a semiconductor device including a circuit-fabricated side on which an encapsulation layer is formed, the method comprising:
placing a disc-shaped semiconductor wafer on a suction surface of a suction stage, the sucking area having a diameter in the range of 99 to 100.5% of a diameter of the semiconductor wafer;
holding the semiconductor wafer on the suction surface of the suction stage by suction; and
grinding a back surface of the semiconductor wafer.
2 . The method for manufacturing a semiconductor device according to claim 1 , wherein grinding is performed such that a surface roughness of the back surface is not greater than 5 nm.
3 . The method for manufacturing a semiconductor device according to claim 1 , further comprising forming the encapsulation layer having a flexural modulus not smaller than 12 Gpa and not larger than 18 Gpa at room temperature.