Etched-facet ridge lasers with etch-stop
A photonic device incorporate an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.
1. A photonic device comprising:
a substrate;
at least a first epitaxial semiconductor structure including an active layer and a wet etch stop layer on said substrate, said wet etch stop layer being located above, and close to, said active layer;
an etched ridge formed in said structure, said ridge having a base at said stop layer;
at least a first etched facet fabricated in said structure; and
at least a first electrode on said structure.
2. The device of claim 1 , wherein said etch stop layer is GaInAsP.
3. The device of claim 2 , wherein said etched ridge is partially dry etched and partially wet etched.
4. The device of claim 1 , wherein said substrate is InP.
5. The device of claim 1 , wherein said device is a laser selected from the group comprising an edge emitting laser and a surface emitting laser.
6. The device of claim 5 , further comprising a second etched facet fabricated in said structure.
7. A photonic device comprising:
a substrate; and
at least a first epitaxial semiconductor structure on said substrate, said epitaxial semiconductor structure comprising:
a lower cladding layer on said substrate;
an active layer on said lower cladding layer;
an upper cladding layer on said active layer, said upper cladding layer including a bottom cladding segment on said active layer; a wet etch stop layer on said bottom segment; and, a top cladding segment on said wet etch stop layer;
an etched ridge formed in said top cladding segment and having a base at said wet etch stop layer;
at least a first etched facet fabricated in said structure; and
a contact layer on said upper cladding layer.
8. The device of claim 7 , wherein said etch stop layer is GaInAsP.
9. The device of claim 8 , wherein said etched ridge is partially dry etched and partially wet etched.
10. The device of claim 7 , wherein said substrate is InP.
11. The device of claim 7 , wherein said device is a laser selected from the group comprising an edge emitting laser and a surface emitting laser.
12. The device of claim 11 , further comprising a second etched facet fabricated in said structure.
13. A photonic device comprising:
a substrate;
at least a first epitaxial semiconductor structure including an active layer and a wet etch stop layer on said substrate;
an etched ridge formed in said structure, said ridge having a base at said stop layer;
at least a first etched facet fabricated in said structure;
an etch floor surrounding said ridge at the base of the ridge and extending to said etched facet;
a wall portion on said etch floor adjacent said etched facet, whereby said ridge is shallower at said etched facet than at said base; and
at least a first electrode on said structure.
14. The device of claim 13 , wherein said etch stop layer is GaInAsP.
15. The device of claim 14 , wherein said etched ridge is partially dry etched and partially wet etched.
16. The device of claim 13 , wherein said substrate is InP.
17. The device of claim 13 , wherein said device is a laser selected from the group comprising an edge emitting laser and a surface emitting laser.
18. The device of claim 17 , further comprising a second etched facet fabricated in said structure.