Thin film transistor, method for fabricating the same and display device
View Patent ↗A method for fabricating a TFT on a substrate includes forming a gate electrode; forming a semiconductor layer insulated from the gate electrode and partially overlapped with the gate electrode; forming a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer including a sol-gel compound; and forming source and drain electrodes at both sides of the semiconductor layer.
1. A display device comprising:
a display panel;
a gate driver applying scanning signals to a plurality of gate lines and a data driver applying video signals to a plurality of data lines in the display panel, the gate and data lines defining a plurality of pixels; and
a thin film transistor in each pixel, the thin film transistor including a gate electrode, a gate insulating layer, a semiconductor layer, and source/drain electrodes, wherein the gate insulating layer between the gate electrode and the semiconductor layer is formed of an organic/inorganic hybrid type material including metal alkoxide having a functional group X and silicon alkoxide having a functional group Y, and wherein at least one of the functional groups X and Y is selected from a functional group having a double bond or triple bond, an acrylate group, an epoxy group, an oxetane group and an alkyl group.
2. The device as claimed in claim 1 , wherein the organic/inorganic hybrid type material is a sol-gel compound.
3. The device as claimed in claim 1 , wherein the metal alkoxide includes at least one of Ti, Zr, Y, Al, Hf, Ca and Mg.
4. The device as claimed in claim 1 , wherein the metal alkoxide includes a material having a dielectric constant of about 7 or greater.
5. The device as claimed in claim 1 , wherein the organic/inorganic hybrid type material is cross linked by the functional groups.
6. The device as claimed in claim 1 , wherein the organic/inorganic hybrid type material has a dielectric constant and transmittance that change according to a content ratio of the silicon alkoxide and the metal alkoxide.
7. The device as claimed in claim 6 , wherein an amount of the silicon alkoxide is substantially the same as an amount of the metal alkoxide in the organic/inorganic hybrid type material.
8. The device as claimed in claim 1 , wherein the semiconductor layer is formed of amorphous silicon.
9. The device as claimed in claim 1 , wherein the semiconductor layer includes a pentancene or thiophene material.
10. A thin film transistor (TFT) on a substrate, comprising:
a gate electrode;
a semiconductor layer insulated from the gate electrode and partially overlapped with the gate electrode;
a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer including a sol-gel compound; and
source and drain electrodes at both sides of the semiconductor layer and wherein the sol-gel compound includes metal alkoxide having a functional group X and silicon alkoxide having a functional group Y, and wherein at least one of the functional groups X and Y is selected from a functional group having a double bond or triple bond, an acrylate group, an epoxy group, an oxetane group and an alkyl group.
11. The TFT as claimed in claim 10 , wherein the metal alkoxide includes at least one of Ti, Zr, Y, Al, Hf, Ca and Mg.
12. The TFT as claimed in claim 10 , wherein the sol-gel compound has a dielectric constant and transmittance that change according to a content ratio of the silicon alkoxide and the metal alkoxide.
13. The TFT as claimed in claim 10 , wherein the semiconductor layer is formed of amorphous silicon.
14. The TFT as claimed in claim 10 , wherein the semiconductor layer includes a pentancene or thiophene material.
15. The TFT as claimed in claim 10 , wherein the TFT is a bottom-gate type TFT or a top-gate type TFT.