Organic thin film transistor with tunneling barrier layer and method of manufacturing the same
View Patent ↗The present application relates to an organic thin film transistor with tunneling barrier layer and method of manufacturing the same improving the mobility properties of the thin film transistor and preventing the current crowding at low voltages. The organic thin film transistor includes a buffer layer on a substrate, a source and drain electrodes on the buffer layer, wherein each of the source and drain electrodes is in an island shape, a tunneling barrier layer on the source and drain electrodes, an organic semiconductor layer on the tunneling barrier layer, a gate insulation layer on the organic semiconductor layer, and a gate electrode overlapping both edges of the source and drain electrodes, and formed on the gate insulation layer, and wherein the tunneling barrier layer under the organic semiconductor layer is formed between the source and drain electrodes and the gate electrode.
1. An organic thin film transistor comprising:
a buffer layer on a substrate;
source and drain electrodes on the buffer layer, wherein each of the source and drain electrodes is formed in an island shape;
a tunneling barrier layer on the source and drain electrodes;
an organic semiconductor layer on the tunneling barrier layer;
a gate insulation layer on the organic semiconductor layer; and
a gate electrode overlapping both edges of the source and drain electrodes, and formed on the gate insulation layer,
wherein the tunneling barrier layer under the organic semiconductor layer is formed between the source and drain electrodes and the gate electrode,
wherein the tunneling barrier layer is formed between the source electrode and the organic semiconductor layer, between the drain electrode and the organic semiconductor layer and between the buffer layer and the organic semiconductor layer, and
wherein the tunneling barrier layer is formed of one of CBP(4,4′-N,N′-dicarbazole-biphenyl), BCP(2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) and SiNx.
2. The organic thin film transistor of claim 1 , wherein the tunneling barrier layer is formed on the buffer layer.
3. The organic thin film transistor of claim 2 , wherein the tunneling barrier layer is formed on upper surfaces of the source and drain electrodes, and on sidewalls of the source and drain electrodes.
4. The organic thin film transistor of claim 1 , wherein the source and drain electrodes are formed of ITO or IZO.
5. The organic thin film transistor of claim 1 , wherein each of the source and drain electrodes is formed in a dual-layered structure having one of IZO and ITO and one of chrome (Cr) and molybdenum (Mo).
6. The organic thin film transistor of claim 1 , wherein the organic semiconductor layer is formed of one of liquid crystalline polyfluorene block copolymer (LCPBC), pentacene and polythiophene.
7. An organic thin film transistor comprising:
source and drain electrodes over a substrate, each of the source and drain electrodes having an island shape;
a tunneling barrier layer on the source and drain electrodes, and extending between the source and drain electrodes;
an organic semiconductor layer on the tunneling barrier layer;
a gate insulation layer on the organic semiconductor layer; and
a gate electrode overlapping both edges of the source and drain electrodes, and on the gate insulation layer,
wherein the tunneling barrier layer under the organic semiconductor layer is formed between the source and drain electrodes and the gate electrode,
wherein the tunneling barrier layer is formed between the source electrode and the organic semiconductor layer, between the drain electrode and the organic semiconductor layer and between the buffer layer and the organic semiconductor layer, and
wherein the tunneling barrier layer is formed of one of CBP(4,4′-N,N′-dicarbazole-biphenyl), BCP(2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) and SiNx.
8. The organic thin film transistor of claim 7 , further comprising a buffer layer on the substrate.
9. The organic thin film transistor of claim 8 , wherein the tunneling barrier layer is formed on the buffer layer.
10. The organic thin film transistor of claim 7 , wherein the tunneling barrier layer is formed on upper surfaces of the source and drain electrodes, and on sidewalls of the source and drain electrodes.
11. The organic thin film transistor of claim 7 , wherein the source and drain electrodes are formed of ITO or IZO.
12. The organic thin film transistor of claim 7 , wherein each of the source and drain electrodes is formed in a dual-layered structure having one of IZO and ITO and one of chrome (Cr) and molybdenum (Mo).
13. The organic thin film transistor of claim 7 , wherein the organic semiconductor layer is formed of one of liquid crystalline polyfluorene block copolymer (LCPBC), pentacene and polythiophene.