Thin film transistor array substrate with organic sol compound passivation layer
View Patent ↗A thin film transistor (TFT) array substrate and a method for fabricating the thin film transistor (TFT) array substrate is disclosed, wherein a passivation layer is directly subjected to exposing and patterning processes without using any photoresist, thereby simplifying the fabrication process and ensuring reduced preparation costs. In particular, the method comprises a thin film transistor (TFT) array comprising: forming a gate line and a gate electrode on a substrate; forming a semiconductor layer to be insulated from the gate electrode, and overlapped with a portion of the gate electrode; forming a source electrode and a drain electrode on both sides of the semiconductor layer, respectively, while forming a data line intersecting with the gate line; forming a passivation layer over an entire upper surface of the substrate including the source electrode and the drain electrode using a sol compound of a metal alkoxide having a photosensitive group X and a silicon alkoxide having a photosensitive group Y; light-exposing and developing the passivation layer to form a contact hole through which the drain electrode is exposed; and forming a pixel electrode to be in contact with the drain electrode through the contact hole.
1. A thin film transistor (TFT) array comprising:
a gate line and a gate electrode formed on a substrate;
a semiconductor layer insulated from the gate electrode and overlapped with a portion of the gate electrode;
a source electrode and a drain electrode formed on one side of the semiconductor layer and on the opposing side of the semiconductor layer, and a data line intersecting with the gate line;
a passivation layer formed over an entire upper surface of the substrate including the source electrode and the drain electrode, the passivation layer being made of a sol compound; and
a pixel electrode being in contact with the drain electrode;
wherein the sol compound includes metal alkoxide having a photosensitive group X and silicon alkoxide having a photosensitive group Y, and
wherein each of the photosensitive groups X and Y is selected from at least one of groups consisting of an acrylate group, an epoxy group and an oxetane group.
2. The TFT array according to claim 1 , wherein the metal alkoxide is selected from at least of groups consisting of Ti, Zr, Y, Al, Hf, Ca and Mg.
3. The TFT array according to claim 1 , wherein the photosensitive groups X and Y of the sol compound are photo-crosslinked under a light-exposing process.
4. The TFT array according to claim 3 , wherein the photo-crosslinked portion of the sol compound is removed.
5. The TFT array according to claim 1 , wherein the sol compound further contains a radical photo-initiator selected from benzophenones and acetophenones, or a cationic photo-initiator selected from aryldiazoniums, diaryliodiniums and triarylsulfoniums.
6. A thin film transistor (TFT) array comprising:
a gate line and a gate electrode formed on a substrate;
a semiconductor layer insulated from the gate electrode and overlapped with a portion of the gate electrode;
a source electrode and a drain electrode respectively formed on both sides one side of the semiconductor layer and on the opposing side of the semiconductor layer, and a data line intersecting with the gate line;
a passivation layer using a material having a structure in which nanoparticles are dispersed in a polymer matrix; and
a pixel electrode being in contact with the drain electrode,
wherein the polymer matrix includes photosensitive groups X and Y, and wherein each of the photosensitive groups X and Y is an acrylate group, and
wherein the nanoparticle is selected from the group consisting of O2 and AlO3.
7. The TFT array according to claim 6 , wherein the polymer matrix is selected from the group consisting of inorganic polymers including polysiloxanes and polysilanes; organic polymers including polyacrylates, polyimides and polyvinyls; and inorganic/organic hybrid polymers.
8. The TFT array according to claim 6 , wherein the photosensitive groups X and Y of the passivation layer are photo-crosslinked under a light-exposing process.
9. The TFT array according to claim 8 , wherein the photo-crosslinked portion of the passivation layer is removed.
10. The TFT array according to claim 6 , wherein the polymer matrix further contains a radical photo-initiator selected from benzophenones and acetophenones, or a cationic photo-initiator selected from aryldiazoniums, diaryliodiniums and triarylsulfoniums.