Guard ring extension to prevent reliability failures
An embodiment of the present invention is a technique to prevent reliability failures in semiconductor devices. A trench is patterned in a polyimide layer over a guard ring having a top metal layer. A passivation layer is etched at bottom of the trench. A capping layer is deposited on the trench over the etched passivation layer. The capping layer and the top metal layer form a mechanical strong interface to prevent a crack propagation.
1. A method comprising:
patterning a trench in a polyimide layer over a guard ring having a top metal layer;
etching a passivation layer at bottom of the trench and exposing said top metal layer; and
depositing a capping layer on the trench over the etched passivation layer and on the exposed top metal layer, the capping layer and the top metal layer forming a mechanical strong interface to prevent a crack propagation.
2. The method of claim 1 wherein etching the passivation comprises:
etching the passivation layer at the bottom of the trench to be within or to extend beyond an area of the guard ring.
3. The method of claim 1 wherein the capping layer includes a metal made of titanium (Ti) or aluminum (Al).
4. A device comprising:
a trench patterned in a polyimide layer over a guard ring having a top metal layer;
a passivation layer etched at bottom of the trench; and
a capping layer deposited on the trench over the etched passivation layer and in contact with the top metal layer in the trench, the capping layer and the top metal layer forming a mechanical strong interface to prevent a crack propagation.
5. The device of claim 4 wherein the etched passivation layer is within or extends beyond an area of the guard ring.
6. The device of claim 4 wherein the capping layer is made of at least one of titanium (Ti) and aluminum (Al).
7. A system comprising:
a front end processing unit to receive and transmit a radio frequency (RF) signal, the RF signal being converted to digital data; and
a processor coupled to the front end processing unit to process the digital data, the processor comprising a die, and a guard ring assembly comprising:
a guard ring adjacent to the die, the guard ring having a top metal layer,
a trench patterned in a polyimide layer over the guard ring,
a passivation layer etched at bottom of the trench, and
a capping layer deposited on the trench over the etched passivation layer and in contact with the top metal layer in the trench, the capping layer and the top metal layer forming a mechanical strong interface to prevent a crack propagation.
8. The system of claim 7 wherein the etched passivation layer is within or extends beyond an area of the guard ring.
9. The system of claim 7 wherein the capping layer is made of at least one of titanium (Ti) and aluminum (Al).