Mask pattern, method of fabricating thin film transistor, and method of fabricating organic light emitting display device using the same
A method of fabricating a polycrystalline silicon thin film for a thin film transistor (TFT), a mask pattern used for the method, and a method of fabricating a flat panel display device using the method and the mask pattern. In one embodiment, a mask pattern includes a plurality of regions, each of the regions having at least one of one or more transparent portions or one or more non-transparent portions. A total area of the one or more transparent portions and the one or more non-transparent portions in one of the regions is substantially equal to a total area of the one or more transparent portions and the one or more non-transparent portions in at least one other of the regions. A total area of the transparent portions in the mask pattern is different from a total area of the non-transparent portions in the mask pattern.
1 . A mask pattern comprising a plurality of regions, each of the regions having at least one of one or more transparent portions or one or more non-transparent portions,
wherein a total area of the one or more transparent portions and the one or more non-transparent portions in one of the regions is substantially equal to a total area of the one or more transparent portions and the one or more non-transparent portions in at least one other of the regions, and
wherein a total area of the transparent portions in the mask pattern is different from a total area of the non-transparent portions in the mask pattern.
2 . The mask pattern according to claim 1 , wherein the total area of the transparent portions in the mask pattern is larger than the total area of the non-transparent portions in the mask pattern.
3 . The mask pattern according to claim 1 , wherein the total area of the non-transparent portions in the mask pattern is larger than the total area of the transparent portions in the mask pattern.
4 . The mask pattern according to claim 1 , wherein at least two of the regions have the one or more transparent portions and the one or more non-transparent portions, and wherein the at least two of the regions are disposed diagonally to each other.
5 . The mask pattern according to claim 1 , wherein the regions divide the mask pattern along a vertical direction.
6 . The mask pattern according to claim 1 , wherein the regions divide the mask pattern along a horizontal direction.
7 . The mask pattern according to claim 1 , wherein each of the non-transparent portions has a shape of a triangle, a rectangle, a lozenge, or a circle.
8 . A method of fabricating a thin film transistor (TFT), the method comprising:
forming amorphous silicon on a substrate;
radiating a laser beam on the amorphous silicon;
crystallizing the amorphous silicon using a mask pattern; and
forming a semiconductor layer having a source region, a drain region and a channel region,
wherein the mask pattern comprises a plurality of regions, each of the regions having at least one of one or more transparent portions or one or more non-transparent portions,
wherein a total area of the one or more transparent portions and the one or more non-transparent portions in one of the regions is substantially equal to a total area of the one or more transparent portions and the one or more non-transparent portions in at least one other of the regions, and
wherein a total area of the transparent portions in the mask pattern is different from a total area of the non-transparent portions in the mask pattern.
9 . The method according to claim 8 , further comprising forming a gate electrode on the substrate before forming the semiconductor layer.
10 . The method according to claim 8 , further comprising forming a gate electrode on the semiconductor layer after forming the semiconductor layer.
11 . The method according to claim 8 , wherein said crystallizing the amorphous silicon comprises performing sequential lateral solidification (SLS).
12 . The method according to claim 8 , wherein said radiating the laser beam comprises radiating the laser beam two or more times.
13 . The method according to claim 8 , wherein the total area of the transparent portions in the mask pattern is larger than the total area of the non-transparent portions in the mask pattern.
14 . The method according to claim 8 , wherein the total area of the non-transparent portions in the mask pattern is larger than the total area of the transparent portions in the mask pattern.
15 . The method according to claim 8 , wherein at least two of the regions have the one or more transparent portions and the one or more non-transparent portions, and wherein the at least two of the regions are disposed diagonally to each other.
16 . The method according to claim 8 , wherein the regions divide the mask pattern along a vertical direction.
17 . The method according to claim 8 , wherein the regions divide the mask pattern along a horizontal direction.
18 . A method of fabricating an organic light emitting display device, comprising:
forming amorphous silicon on a substrate;
radiating a laser beam on the amorphous silicon;
crystallizing the amorphous silicon using a mask pattern comprising a plurality of regions, each of the regions having at least one of one or more transparent portions or one or more non-transparent portions;
forming a semiconductor layer having a source region, a drain region and a channel region of a thin film transistor (TFT); and
forming a first electrode, an organic layer including at least an emission layer, and a second electrode on the TFT.
19 . The method according to claim 18 ,
wherein a total area of the one or more transparent portions and the one or more non-transparent portions in one of the regions is substantially equal to a total area of the one or more transparent portions and the one or more non-transparent portions in at least one other of the regions, and
wherein a total area of the transparent portions in the mask pattern is different from a total area of the non-transparent portions in the mask pattern.
20 . The method according to claim 19 , wherein the total area of the transparent portions in the mask pattern is larger than the total area of the non-transparent portions in the mask pattern.