Method of manufacturing solar cells with buried contacts with a laser
View Patent ↗A buried contact solar cell which is capable of operating with high efficiency is manufactured by a method which comprises the steps of forming a groove in a surface of a substrate, and forming an electrode by filling a conductive material in the groove using a laser. The step of forming the electrode may include positioning a conductive thin plate above the surface of the substrate, melting the conductive thin plate using a laser in a pattern corresponding to the groove, filling the conductive material in the groove, and removing the conductive thin plate.
1. A method of manufacturing a solar cell, comprising the steps of:
providing a semiconductor substrate;
forming an emitter layer on a surface of the semiconductor substrate;
forming a groove in the surface of the semiconductor substrate; and
forming a first electrode electrically connected to the emitter layer by filling a conductive material into the groove using a laser;
wherein the step of forming the first electrode comprises the steps of positioning a conductive thin plate above the emitter layer, melting the conductive thin plate using the laser in a pattern corresponding to the groove, filling the conductive material into the groove, and removing the conductive thin plate from an entirety of the surface of the substrate.
2. The method of claim 1 , wherein the electrode includes at least one selected from the group consisting of copper, aluminum and silver.
3. The method of claim 1 , wherein a line width of the electrode is in a range of 4 μm to 50 μm.
4. The method of claim 1 , wherein the groove is formed using one of the laser and a scriber.
5. The method of claim 1 , further comprising the step of forming a high-concentration emitter portion in a periphery of the groove before forming the first electrode.
6. The method of claim 1 , further comprising the step of forming a second electrode, which is electrically connected to the semiconductor substrate, on a second surface of the semiconductor substrate.