Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
View Patent ↗Certain example embodiments of this invention relate to an electrode (e.g., front electrode) for use in a photovoltaic device or the like. In certain example embodiments, a transparent conductive oxide (TCO) based front electrode for use in a photovoltaic device is of or includes zinc oxide, or zinc aluminum oxide, doped with yttrium (Y). In certain example embodiments, the addition of the yttrium (Y) to the conductive zinc oxide or zinc aluminum oxide is advantageous in that potential conductivity loss of the electrode can be reduced or prevented. In other example embodiments, a low-E coating may include a layer of or including zinc oxide, or zinc aluminum oxide, doped with yttrium (Y).
1. A photovoltaic device comprising:
a front glass substrate;
a semiconductor film;
an electrically conductive and substantially transparent front electrode located between at least the front glass substrate and the semiconductor film; and
wherein the front electrode comprises zinc aluminum oxide, doped with from about 0.001 to 5.0% yttrium, wherein the zinc aluminum oxide comprises from about 0.5 to 7% aluminum, where the front electrode comprises at least twice as much aluminum as yttrium by weight, wherein the front electrode has a thickness of less than about 200 nm, and wherein the front electrode has a sheet resistance (R s ) of from about 7-50 ohms/square.
2. The photovoltaic device of claim 1 , wherein the front electrode contains from about 0.005 to 1.0% yttrium.
3. The photovoltaic device of claim 1 , wherein the front electrode contains from about 0.01 to 0.50% yttrium.
4. The photovoltaic device of claim 1 , wherein the front electrode contains from about 0.05 to 0.20% yttrium.
5. The photovoltaic device of claim 1 , further comprising a rear glass substrate, and a back electrode located between at least the rear glass substrate and the semiconductor film.
6. The photovoltaic device of claim 1 , wherein the semiconductor film comprises at least one layer comprising amorphous silicon.
7. The photovoltaic device of claim 1 , wherein the semiconductor film comprises at least one layer comprising CdTe.
8. The photovoltaic device of claim 1 , wherein the zinc aluminum oxide comprises from about 1 to 4% aluminum.
9. The photovoltaic device of claim 1 , further comprising a layer comprising EVA located between a rear glass substrate and a back electrode.
10. The photovoltaic device of claim 1 , wherein the front electrode has a sheet resistance (R s ) of no more than about 15 ohms/square.