IP Library Granted Patent US 7,750,709
Granted Patent B1
US 7,750,709 · App. 11/651,221 · Granted Jul 6, 2010

Method and apparatus for biasing a floating node in an integrated circuit

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Quick Facts
Patent No.
US 7,750,709
App. No.
11/651,221
Granted
Jul 6, 2010
Kind
B1
Abstract

One embodiment of the present invention provides a system that biases a floating node within an integrated circuit. During operation, the system first identifies the floating node within the integrated circuit to be biased. The system then determines a desired bias voltage. Next, the system couples a low-power bias source to the floating node to supply the desired bias voltage, wherein the floating node is biased without stopping data transmission through the floating node during biasing.

Claims (39)

1. A method for configuring an integrated circuit to enable biasing a floating node within the integrated circuit without stopping data transmission through the floating node during biasing, the method comprising:

while manufacturing the integrated circuit:

identifying the floating node within the integrated circuit to be biased;

selecting one or more terminals of a four-terminal NMOS or PMOS biasing transistor as an output terminal of the transistor;

connecting the remaining unselected terminals to a desired bias voltage;

coupling the output terminal of the biasing transistor to the floating node; and

controlling a time constant associated with gradually biasing the floating node to the desired bias voltage by changing the sizing of the biasing transistor.

2. The method of claim 1 , wherein the selected terminals can be:

the drain of the transistor;

the source of the transistor;

the gate of the transistor; or

the body of the transistor.

3. The method of claim 1 , wherein the leakage current can be:

a drain-source leakage current;

a gate leakage current; or

a body leakage current.

4. The method of claim 1 , wherein the floating node can include:

a capacitive node; or

an inductive node.

5. The method of claim 1 , further comprising allowing a leakage current between the selected terminals and the unselected terminals of the biasing transistor to gradually bias the floating node to the desired bias voltage during operation of the integrated circuit.

6. An apparatus that configures an integrated circuit during manufacturing to enable biasing a floating node within the integrated circuit without stopping data transmission through the floating node during biasing, the apparatus comprising:

an identification mechanism configured to identify the floating node within the integrated circuit to be biased;

a coupling mechanism configured to:

select one or more terminals of a four-terminal NMOS or PMOS biasing transistor as an output terminal of the biasing transistor;

connect the remaining unselected terminals to a desired bias voltage; and to

couple the output terminal of the biasing transistor to the floating node

a controlling mechanism configured to control a time constant associated with gradually biasing the floating node to the desired bias voltage by changing the sizing of the biasing transistor.

7. The apparatus of claim 6 , wherein the selected terminals can be:

the drain of the transistor;

the source of the transistor;

the gate of the transistor; or

the body of the transistor.

8. The apparatus of claim 6 , wherein the leakage current can be:

a drain-source leakage current;

a gate leakage current; or

a body leakage current.

9. The apparatus of claim 6 , wherein the floating node can include:

a capacitive node; or

an inductive node.

Assignments (2)
MERGER AND CHANGE OF NAME Recorded Dec 16, 2015
From: ORACLE USA, INC.; SUN MICROSYSTEMS, INC.; ORACLE AMERICA, INC.
To: ORACLE AMERICA, INC.
Reel/Frame 037306/0514 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 5, 2007
From: SCHAUER, JUSTIN M.; HOPKINS, ROBERT D.
To: SUN MICROSYSTEMS, INC.
Reel/Frame 018776/0152 →