Semiconductor device and method of producing the same
View Patent ↗A method of producing a semiconductor device includes the steps of forming a protrusion electrode on a semiconductor chip; and sealing the protrusion electrode and a semiconductor substrate with a resin layer. The method further includes the steps of polishing the resin layer until an upper surface of the protrusion electrode is exposed; polishing the exposed upper surface of the protrusion electrode; and forming a solder terminal on the polished upper surface of the protrusion electrode.
1. A method of producing a semiconductor device, comprising the steps of:
forming a protrusion electrode on a semiconductor chip;
sealing the protrusion electrode and a semiconductor substrate with a resin layer;
polishing the resin layer until an upper surface of the protrusion electrode is exposed; through a first polishing step using a rotational grinding stone under a first polishing condition and a second polishing step using the rotational grinding stone under a second polishing condition different from the first polishing condition;
polishing the upper surface of the protrusion electrode; and
forming a solder terminal on the upper surface of the protrusion electrode.
2. The method of producing a semiconductor device according to claim 1 , wherein, in the step of polishing the resin layer, said resin layer is polished until surface roughness of the upper surface becomes less than 220 nm.
3. The method of producing a semiconductor device according to claim 1 , wherein, in the step of polishing the upper surface, said upper surface is polished until surface roughness of the upper surface becomes less than 30 nm.
4. The method of producing a semiconductor device according to claim 1 , in the step of polishing the resin layer, said rotational grinding stone is formed of particles having a particle size between #300 and #1000.
5. The method of producing a semiconductor device according to claim 1 , in the step of polishing the upper surface, said upper surface is polished with diamond particles having a particle size finer than #2000.
6. The method of producing a semiconductor device according to claim 1 , in the step of forming the protrusion electrode, said protrusion electrode is formed of cupper.
7. A semiconductor device being produced with the method according to claim 1 .
8. The semiconductor device according to claim 7 , wherein said upper surface of the protrusion electrode has surface roughness of less than 30 nm.
9. The semiconductor device according to claim 7 , further comprising a sealing layer for sealing a side surface of the protrusion electrode and a main surface of the semiconductor substrate.
10. The semiconductor device according to claim 7 , wherein said protrusion electrode is formed of cupper.