Nitride semiconductor light-emitting device

1. A semiconductor light emitting device, comprising:

a substrate;

a first gallium nitride based semiconductor layer doped with a first dopant on the substrate;

an active layer on the first gallium nitride based semiconductor layer, the active layer including an InGaN material, and a first uneven structure having at least one first inclined surface; and

a second gallium nitride based semiconductor layer doped with a second dopant on the active layer,

wherein the active layer includes at least one in-rich region at the at least one first inclined surface of the first uneven structure, and the first gallium nitride based semiconductor layer comprises a second inclined surface with the active layer formed by protrusions,

wherein the active layer comprises five to nine periods, and one period includes a well and a barrier,

wherein a distance between an uppermost portion of the second inclined surface and a lowermost portion of the second inclined surface in a vertical direction is greater than a thickness of the one period of the active layer, and

wherein the active layer comprises a plurality of vertical distances of different thicknesses.

2. The device according to claim 1 , wherein quantum dots are formed at the at least one first inclined surface.

3. The device according to claim 1 , wherein the active layer has a thickness ranging from about 120 Å to 150 Å per the one period.

4. The device according to claim 1 , further comprising:

a buffer layer on the substrate; and

an un-doped gallium nitride based semiconductor layer on the buffer layer,

wherein the first gallium nitride based semiconductor layer is on the un-doped gallium nitride based semiconductor layer.

5. The device according to claim 1 , further comprising a third gallium nitride based semiconductor layer on the second gallium nitride based semiconductor.

6. The device according to claim 5 , wherein the third gallium nitride based semiconductor layer comprises at least one n-type gallium nitride based semiconductor layer.

7. The device according to claim 1 , wherein the first gallium nitride based semiconductor layer comprises at least one n-type gallium nitride based semiconductor layer and the second gallium nitride based semiconductor layer comprises at least one p-type gallium nitride based semiconductor layer.

8. The device according to claim 1 , wherein the second inclined surface of the first gallium nitride based semiconductor layer is irregular.

9. The device according to claim 1 , wherein the first uneven structure improves light emission efficiency, or a diffused reflection effect of light generated from the active layer occurs by the at least one first inclined surface of the first uneven structure.

10. The device according to claim 1 , wherein the substrate comprises at least one of sapphire, SiC and Si.

11. The device according to claim 1 , wherein the second inclined surface of the first gallium nitride based semiconductor layer contacts the first uneven structure of the active layer.

12. The device according to claim 1 , wherein the second gallium nitride based semiconductor layer comprises a third inclined surface.

13. The device according to claim 12 , wherein the third inclined surface of the second gallium nitride based semiconductor layer contacts the first uneven structure of the active layer.

14. The device according to claim 1 , wherein the first uneven structure is formed irregularly.

15. The device according to claim 1 , wherein the first gallium nitride based semiconductor layer extends from the substrate to the protrusions without an intervening interface.

16. A semiconductor light emitting device, comprising:

a first gallium nitride based semiconductor layer;

an active layer on the first gallium nitride based semiconductor layer, the active layer including an uneven structure having a first inclined surface; and

a second gallium nitride based semiconductor layer on the active layer,

wherein the active layer includes at least one In-rich region at the first inclined surface of the uneven structure, the first gallium nitride based semiconductor layer comprises a second inclined surface, and at least one of the first inclined surface of the uneven structure and the second inclined surface of the first gallium nitride based semiconductor layer has vertices of different heights,

wherein the active layer comprises five to nine periods, and one period includes a well and a barrier, and

wherein a distance between an uppermost portion of the second inclined surface and a lowermost portion of the second inclined surface in a vertical direction is greater than a thickness of the one period of the active layer.

17. The device according to claim 16 , wherein the uneven structure is formed irregularly.

18. The device according to claim 16 , further comprising:

a substrate;

a buffer layer on the substrate; and

an un-doped gallium nitride based semiconductor layer on the buffer layer,

wherein the first gallium nitride based semiconductor layer is on the un-doped gallium nitride based semiconductor layer.

19. The device according to claim 16 , further comprising a third gallium nitride based semiconductor layer on the second gallium nitride based semiconductor layer.

20. The device according to claim 16 , wherein the first gallium nitride based semiconductor layer comprises at least one n-type gallium nitride based semiconductor layer and the second gallium nitride based semiconductor layer comprises at least one p-type gallium nitride based semiconductor layer.

21. The device according to claim 16 , wherein the at least one In-rich region comprises a plurality of quantum dots.

22. The device according to claim 16 , wherein the active layer comprise at least one InGaN layer.

23. The device according to claim 16 , wherein the active layer has a thickness ranging from about 120 Å to 150 Å per the one period.

24. The device according to claim 16 , wherein the second inclined surface of the first gallium nitride based semiconductor layer contacts the uneven structure of the active layer.

25. The device according to claim 16 , wherein the second gallium nitride based semiconductor layer comprises a third inclined surface.

26. The device according to claim 25 , wherein the third inclined surface of the second gallium nitride based semiconductor layer contacts the uneven structure of the active layer.

27. The device according to claim 16 , further comprising a substrate including at least one of sapphire, SiC and Si.

28. A semiconductor light emitting device, comprising:

a first gallium nitride based semiconductor layer;

an active layer on the first gallium nitride based semiconductor layer, the active layer including at least one uneven structure having first inclined surfaces; and

a second gallium nitride based semiconductor layer on the active layer,

wherein the active layer includes at least one In-rich region at the first inclined surfaces of the at least one uneven structure, the first gallium nitride based semiconductor layer comprises second inclined surfaces with the active layer formed by protrusions, and at least one of the first inclined surfaces of the uneven structure and the second inclined surfaces of the first gallium nitride based semiconductor layer comprise at least one substantially V shape in a sectional view,

wherein the first inclined surfaces have the at least one substantially V shape in a sectional view, the at least one substantially V shape has a vertex, and the vertex of the first inclined surfaces is positioned towards the first gallium nitride based semiconductor layer or contacts the first gallium nitride based semiconductor layer,

the active layer has a thickness ranging from about 120 Å to 150 Å per one period including a well and a barrier,

wherein a distance between an uppermost portion of the second inclined surfaces and a lowermost portion of the second inclined surfaces in a vertical direction is greater than a thickness of the one period of the active layer, and

wherein the active layer comprises a plurality of vertical distances of different thicknesses.

29. The device according to claim 28 , wherein an opposite side of the substantially V shape from the vertex contacts the second gallium nitride based semiconductor layer.

30. The device according to claim 28 , wherein the at least one uneven structure is formed irregularly.

31. The device according to claim 28 , wherein the at least one uneven structure comprises a rough surface.

32. The device according to claim 28 , wherein the active layer comprises at least one well and at least one barrier.

33. The device according to claim 28 , further comprising:

a substrate;

a buffer layer on the substrate;

an un-doped gallium nitride based semiconductor layer on the buffer layer,

wherein the first gallium nitride based semiconductor layer is on the un-doped gallium nitride based semiconductor layer.

34. The device according to claim 28 , further comprising a third gallium nitride based semiconductor layer on the second gallium nitride based semiconductor layer.

35. The device according to claim 28 , wherein the first gallium nitride based semiconductor layer comprises at least one n-type gallium nitride based semiconductor layer and the second gallium nitride based semiconductor layer comprises at least one p-type gallium nitride based semiconductor.

36. The device according to claim 28 , wherein the active layer comprises at least one InGaN layer.

37. The device according to claim 28 , further comprising a substrate including at least one of sapphire, SiC and Si.

38. The device according to claim 28 , wherein the active layer comprises five to nine periods of the well and the barrier.

39. A semiconductor light emitting device, comprising:

a substrate;

a first gallium nitride based semiconductor layer doped with a first dopant on the substrate;

an active layer on the first gallium nitride based semiconductor layer, the active layer including an InGaN material, and a first uneven structure having at least one first inclined surface; and

a second gallium nitride based semiconductor layer doped with a second dopant on the active layer,

wherein the active layer includes at least one In-rich region at the at least one first inclined surface of the first uneven structure, and the first gallium nitride based semiconductor layer comprises a second inclined surface with the active layer formed by protrusions,

wherein the active layer further includes at least one period, wherein one period of the at least one period includes a well and a barrier,

wherein a distance between an uppermost portion of the second inclined surface and a lowermost portion of the second inclined surface in a vertical direction is greater than a thickness of the one period of the active layer, and

wherein the active layer comprises a plurality of vertical distances of different thicknesses.

40. A semiconductor light emitting device, comprising:

a first gallium nitride based semiconductor layer;

an active layer on the first gallium nitride based semiconductor layer, the active layer including an uneven structure having a first inclined surface; and

a second gallium nitride based semiconductor layer on the active layer,

wherein the active layer includes at least one In-rich region at the first inclined surface of the uneven structure, the first gallium nitride based semiconductor layer comprises a second inclined surface, and at least one of the first inclined surface of the uneven structure and the second inclined surface of the first gallium nitride based semiconductor layer has vertices of different heights,

wherein the active layer includes at least one period, wherein one period of the at least one period includes a well and a barrier, and

wherein a distance between an uppermost portion of the second inclined surface and a lowermost portion of the second inclined surface in a vertical direction is greater than a thickness of the one period of the active layer.

41. A semiconductor light emitting device, comprising:

a first gallium nitride based semiconductor layer;

an active layer on the first gallium nitride based semiconductor layer, the active layer including at least one uneven structure having first inclined surfaces; and

a second gallium nitride based semiconductor layer on the active layer,

wherein the active layer includes at least one In-rich region at the first inclined surfaces of the at least one uneven structure, the first gallium nitride based semiconductor layer comprises second inclined surfaces with the active layer formed by protrusions, and at least one of the first inclined surfaces of the uneven structure and the second inclined surfaces of the first gallium nitride based semiconductor layer comprise at least one substantially V shape in a sectional view,

wherein the first inclined surfaces of the at least one uneven structure have the at least one substantially V shape in a sectional view, the at least one substantially V shape has a vertex, and the vertex of the first inclined surfaces of the at least one uneven structure is positioned towards the first gallium nitride based semiconductor layer or contacts the first gallium nitride based semiconductor layer,

wherein the active layer includes at least one period, wherein one period of the at least one period includes a well and a barrier,

wherein a distance between an uppermost portion of the second inclined surfaces of the first gallium nitride based semiconductor layer and a lowermost portion of the second inclined surfaces of the first gallium nitride based semiconductor layer in a vertical direction is greater than a thickness of the one period of the active layer, and

wherein the active layer comprises a plurality of vertical distances of different thicknesses.