Resonator operating with bulk acoustic waves
View Patent ↗Disclosed is a resonator that is mounted on a substrate, operates with acoustic bulk waves, and is disposed above an acoustic mirror. According to the invention, the basic mode of the acoustic bulk wave that can be generated in the resonator is suppressed while a higher mode can be excited in parallel and be utilized for the resonator by adjusting the acoustic mirror.
1. A bulk acoustic wave (BAW) resonator comprising:
a substrate; and
a layer structure above the substrate, the layer structure comprising:
an acoustic reflector;
a first electrode;
a piezoelectric layer; and
a second electrode, the first and second electrodes being adjacent to the piezoelectric layer;
wherein the BAW resonator is configured to suppress a fundamental mode of a bulk acoustic wave in the BAW resonator, the fundamental mode having a wavelength that is twice a distance between the first electrode and the second electrode.
2. The BAW resonator of claim 1 , wherein the acoustic reflector comprises reflector layers having layer thicknesses that achieve a minimum reflectivity at a frequency of the fundamental mode and that achieve a maximum reflectivity at a frequency of a mode that is higher than the fundamental mode.
3. The BAW resonator of claim 2 , wherein a thickness of at least one reflector layer that supports oscillation of the resonator in the fundamental mode is less than a thickness of an ideal reflector.
4. The BAW resonator of claim 2 , wherein a thickness of at least one electrode layer is higher than a thickness of an electrode layer in a resonator oscillating exclusively in the fundamental mode.
5. The BAW resonator of claim 1 , which is wired to a passive network that increases a distance between a pole and a zero of the BAW resonator.
6. The BAW resonator of claim 1 , wherein the piezoelectric layer comprises a PZT material.
7. The BAW resonator of claim 1 , which is configured to oscillate significantly at more than one frequency.
8. The BAW resonator of claim 1 , further comprising:
a coupling layer above the second electrode; and
another resonator above the coupling layer, the other resonator comprising:
a third electrode;
a second piezoelectric layer; and
a fourth electrode.
9. The BAW resonator of claim 8 , wherein the coupling layer comprises layers comprised of reflector layers with alternating high and low acoustic impedance.
10. The BAW resonator of claim 8 , wherein the coupling layer comprises a uniform layer having a low acoustic impedance.
11. The BAW resonator of claim 1 , wherein a stop band of the acoustic reflector at which the acoustic reflector reflects at a maximum is at a frequency above the fundamental mode.
12. The BAW resonator of claim 1 , which is connected to other BAW resonators to form a filter.
13. The BAW resonator of claim 1 , which is connected to other BAW resonators to form a duplexer.
14. The BAW resonator of claim 1 , further comprising:
a coupling layer above the second electrode; and
another resonator above the coupling layer.
15. The BAW resonator of claim 14 , wherein the coupling layer comprises layers comprised of reflector layers with alternating high and low acoustic impedance.
16. The BAW resonator of claim 14 , wherein the coupling layer comprises one layer having a single acoustic impedance.
17. The BAW resonator of claim 8 , wherein the piezoelectric layer comprises a PZT material.
18. The BAW resonator of claim 8 , wherein the coupling layer comprises one layer having a single acoustic impedance.
19. A bulk acoustic wave (BAW) resonator comprising:
a substrate; and
a layer structure above the substrate, the layer structure comprising:
an acoustic reflector;
a first electrode;
a piezoelectric layer; and
a second electrode;
wherein the BAW resonator is configured to suppress a fundamental mode of a bulk acoustic wave in the BAW resonator;
wherein the acoustic reflector comprises reflector layers having layer thicknesses that achieve a minimum reflectivity at a frequency of the fundamental mode and that achieve a maximum reflectivity at a frequency of a mode that is higher than the fundamental mode; and
wherein a thickness of at least one reflector layer that supports oscillation of the resonator in the fundamental mode is less than a thickness of an ideal reflector.
20. A bulk acoustic wave (BAW) resonator comprising:
a substrate; and
a layer structure above the substrate, the layer structure comprising:
an acoustic reflector;
a first electrode;
a piezoelectric layer; and
a second electrode;
wherein the BAW resonator is configured to suppress a fundamental mode of a bulk acoustic wave in the BAW resonator;
wherein the acoustic reflector comprises reflector layers having layer thicknesses that achieve a minimum reflectivity at a frequency of the fundamental mode and that achieve a maximum reflectivity at a frequency of a mode that is higher than the fundamental mode; and
wherein a thickness of at least one electrode layer is higher than a thickness of an electrode layer in a resonator oscillating exclusively in the fundamental mode.