Micromachine Device
A micromachine device includes a pad 107 a and a pad 107 b formed of a polysilicon doped with impurities.
1 - 3 . (canceled)
4 . A micromachine device, comprising:
a first conductive film having a first electrode section and a first pad section; and
a second conductive film having a second electrode section and a second pad section,
wherein the first electrode section and the second electrode section face each other with an air gap interposed therebetween, and
the first conductive film and the second conductive film are each formed of a polysilicon doped with impurities.
5 . The micromachine device of claim 4 wherein, on each of the first pad section and the second pad section, a wire made of aluminum is directly bonded by an eutectic reaction.
6 . The micromachine device of claim 4 , wherein:
a protection film is formed over a surface of the first conductive film opposite to the second conductive film except for the first pad section; and
the second conductive film bends according to a change in air pressure.