The present invention relates to an inorganic composition mainly containing a compound semiconductor, wherein the inorganic composition contains iridium element. The invention also relates to a method of producing an inorganic composite for producing an luminescent material, wherein the method comprises subjecting an inorganic composition mainly containing a compound semiconductor to an explosion by gunpowder and/or explosive in a sealed vessel. An inorganic composite for producing a luminescent material can be prepared by subjecting an inorganic composition to a doping treatment such as explosive treatment or heat-treatment. The inorganic composite can further be heat-treated to produce a luminescent material. The resulting luminescent material can be formed into a layer as a light emitter layer of an inorganic EL device.
1. An inorganic composition comprising a powder mixture of:
a compound semiconductor as a main component;
an iridium source; and
at least one source of an element other than iridium, wherein the element is at least one element selected from the group consisting of a halogen element, a rare earth element, manganese, copper, silver and gold.
2. The inorganic composition of claim 1 , wherein the compound semiconductor is a group II-VI compound semiconductor.
3. An inorganic composite for producing an luminescent material, which is obtained from the inorganic composition of claim 1 or 2 .
4. A method of producing an inorganic composite, wherein the method comprises heat-treating the inorganic composition of claim 1 or 2 at 700° C. or higher in an inert atmosphere or a reducing atmosphere.