Optoelectronic thin-film chip
View Patent ↗An optoelectronic thin-film chip is specified, comprising at least one radiation-emitting region ( 8 ) in an active zone ( 7 ) of a thin-film layer ( 2 ) and a lens ( 10, 12 ) disposed downstream of the radiation-emitting region ( 8 ). The lens is formed by at least one partial region of the thin-film layer ( 2 ), the lateral extent (Φ) of the lens ( 10, 12 ) being greater than the lateral extent of the radiation-emitting region (δ). A method for producing such an optoelectronic thin-film chip is furthermore specified.
1. An optoelectronic thin-film chip, comprising:
at least one radiation-emitting region in an active zone of a thin-film layer;
a carrier, to which the thin-film layer is applied;
at least one current coupling-in region arranged between the carrier and the thin-film layer;
a lens disposed on a side of the active zone opposite the carrier, said lens formed by at least one partial region of the thin-film layer, a lateral extent of the lens being greater than a lateral extent of the radiation-emitting region; and
at least one depression in an interface of the thin-film layer which faces the carrier, wherein the at least one depression at least partly surrounds the current coupling-in region.
2. The optoelectronic thin-film chip as claimed in claim 1 , comprising a plurality of radiation-emitting regions, wherein precisely one lens is disposed on a side of the active zone opposite the carrier for each radiation-emitting region.
3. The optoelectronic thin-film chip as claimed in claim 1 , wherein the lateral extent of the lens is greater than a lateral extent of the current coupling-in region.
4. The optoelectronic thin-film chip as claimed in claim 1 ,
wherein the lens is formed at a surface of the thin-film layer which is remote from the carrier.
5. The optoelectronic thin-film chip as claimed in claim 1 , wherein the lateral extent of the lens is between 30 and 100 μm.
6. The optoelectronic thin-film chip as claimed in claim 1 , wherein a lateral extent of the current coupling-in region is between 1 and 80 μm.
7. The optoelectronic thin-film chip as claimed in claim 1 , wherein the distance between radiation-emitting region and a base point of the lens is between 1 and 50 μm.
8. The optoelectronic thin-film chip as claimed in claim 1 , wherein the depression is between 1 and 20 μm deep.
9. The optoelectronic thin-film chip as claimed in claim 1 ,
wherein the depression tapers in a direction of a surface of the thin-film layer which is remote from the carrier, and inner walls of the depression form an angle of between 10 and 90° with the carrier.
10. A method for producing a thin-film chip as claimed in claim 1 , comprising:
producing at least one lens on a surface of a thin-film layer which is remote from a carrier.
11. The method for producing a thin-film chip as claimed in claim 10 , wherein the lens is produced by means of an etching process.