Magneto-resistance effect element and magnetic memory device
The invention relates to a magneto-resistance effect element and a magnetic memory device. Lowering the magnetic domain wall movement current and drive at room temperature in a current induction single magnetic domain wall movement phenomenon are achieved. A magneto-resistance effect element is formed by including at least: a magnet wire 1 for forming magnetic domain wall potential 7 binding a single magnetic domain wall 2 ; a magnetic field applying means for generating a magnetic field for introducing the single magnetic domain wall 2 into the magnet wire 1 ; and a drive current applying means for applying the current 3 including a resonance frequency component determined on the basis of the magnetic domain wall potential 7.
1. A magneto-resistance effect element comprising at least:
a magnet wire for forming magnetic domain wall potential binding a single magnetic domain wall:
a magnetic field applying means for generating a magnetic field for introducing the single magnetic domain wall into the magnet wire; and
a drive current applying means for applying a current including a resonance frequency component determined on the basis of the magnetic domain wall potential,
wherein the magnet wire is formed from an arc-shaped magnet loop and comprises a bound external magnetic field applying means for applying a bound external magnetic field binding the single magnetic domain wall and
the magnetic domain wall potential depends on the shape of the magnet loop and the bound external magnetic field.
2. The magneto-resistance effect element according to claim 1 , wherein
the magnetic domain wall potential is formed in any of a magnetic deterioration area locally formed in the magnet wire and a shape defect area.
3. A magneto-resistance effect element comprising at least:
a magnet wire for forming magnetic domain wall potential binding a single magnetic domain wall;
a magnetic field applying means for generating a magnetic field for introducing the single magnetic domain wall into the magnet wire; and
a drive current applying means for applying a current including a resonance frequency component determined on the basis of the magnetic domain wall potential,
wherein the current including a resonance frequency component, applied from the drive current applying means, is a high frequency current including a resonance frequency component.
4. The magneto-resistance effect element according to claim 3 ,
wherein the magnet wire is formed from an arc-shaped magnet loop and comprises a bound external magnetic field applying means for applying a bound external magnetic field binding the single magnetic domain wall, and
the magnetic domain wall potential depends on the shape of the magnet loop and the bound external magnetic field.
5. The magneto-resistance effect element according to claim 3 , wherein
the magnetic domain wall potential is formed in any of a magnetic deterioration area locally formed in the magnet wire and a shape defect area.