IP Library Granted Patent US 7,619,461
Granted Patent B2
US 7,619,461 · App. 11/667,840 · Granted Nov 17, 2009

Switching circuit which is used to obtain a doubled dynamic range

Assignee: Diseño de Sistemasen Silicio, S.A.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,619,461
App. No.
11/667,840
Granted
Nov 17, 2009
Kind
B2
Abstract

It permits switching signals with a peak level equal to the source voltage by means of a transistor, the peak to peak level being double the source. It is characterized by the connection of a transistor ( 17 ) to the signal source ( 10 ) and a load ( 19 ) by means of a series of capacitors ( 11, 18 ), resistors ( 15, 16 ) and an inductor ( 12 ) that form the circuit of the invention, and by the application of two complementary control voltages ( 13 and 14 ) in order to control the off and on states of the switch circuit.

Claims (32)

1. Switch circuit to obtain a duplicate dynamic range, which comprises a transistor ( 17 ) with three terminals ( 20 , 21 and 22 ), an inductor ( 12 ), two resistors ( 15 and 16 ) and two capacitors ( 11 and 18 ), located between a signal source (V SOURCE ) ( 10 ) and an external load (Z load ) ( 19 ) characterized in that it comprises:

connecting the signal source (V source ) ( 10 ) to the first terminal ( 20 ) of the transistor by means of a capacitor ( 11 );

connecting an input of complementary control voltage (VControl ) ( 13 ) to the first terminal ( 20 ) of the transistor ( 17 ) by means of an inductor ( 12 );

connecting an input of control voltage (V control ) ( 14 ) to the second terminal ( 21 ) of the transistor ( 17 ) by means of a resistor ( 15 );

connecting an input of control voltage (V control ) ( 14 ) to the third terminal ( 22 ) of the transistor by means of another resistor ( 16 );

connecting the third terminal ( 22 ) of the transistor ( 17 ) to the load (Z load ) by means of a capacitor ( 18 ); and

applying a control voltage (V control ) ( 14 ) and its complementary control voltage (VControl ) ( 13 ) to the switch circuit;

in order to achieve a dynamic range in the switching double the range of the source voltage.

2. Switch circuit to obtain a duplicate dynamic range, according to claim 1 , characterized in that the transistor used is a reverse biased BJT transistor.

3. Switch circuit to obtain a duplicate dynamic range, according to claim 1 , characterized in that the transistor used is a direct biased BJT transistor.

4. Switch circuit to obtain a duplicate dynamic range, according to claim 1 , characterized in that the transistor used is an N channel MOSFET transistor.

5. Switch circuit to obtain a duplicate dynamic range, according to claim 1 , characterized in that the transistor used is a P channel MOSFET transistor.

6. Switch circuit to obtain a duplicate dynamic range, according claim 2 , characterized in that for the cases wherein the transistor is a BJT NPN or N channel MOSFET one, when the voltage control (V control ) ( 14 ) is equal to the highest limit of the source voltage, the complementary control voltage (VControl ) ( 13 ) is equal to the lowest limit of the source supply and the switch is on, whereas when the voltage control (V control ) ( 14 ) is equal to the lowest limit, the complementary control voltage (VControl ) ( 13 ) is equal to the highest limit and the switch is off.

7. Switch circuit to obtain a duplicate dynamic range, according to claim 2 , characterized in that for the cases wherein the transistor is a BJT PNP or P channel MOSFET, when the voltage control (V control ) ( 14 ) is equal to the highest limit of the source voltage, the complementary control voltage (VControl ) ( 13 ) is equal to the lowest limit of the source voltage and the switch is off, whereas when the control voltage (V control ) ( 14 ) is equal to the lowest limit, the complementary control voltage (VControl ) ( 13 ) is equal to the highest limit and the switch is on.

8. Switch circuit to obtain a duplicate dynamic range, according to claim 1 , characterized in that a unipolar source is applied to the switch circuit.

9. Switch circuit to obtain a duplicate dynamic range, according to claim 1 , characterized in that a bipolar source is applied to the switch circuit.

10. Switch circuit to obtain a duplicate dynamic range, according claim 3 , characterized in that for the cases wherein the transistor is a BJT NPN or N channel MOSFET one, when the voltage control (V control ) ( 14 ) is equal to the highest limit of the source voltage, the complementary control voltage (VControl ) ( 13 ) is equal to the lowest limit of the source supply and the switch is on, whereas when the voltage control (V control ) ( 14 ) is equal to the lowest limit, the complementary control voltage (VControl ) ( 13 ) is equal to the highest limit and the switch is off.

11. Switch circuit to obtain a duplicate dynamic range, according claim 4 , characterized in that for the cases wherein the transistor is a BJT NPN or N channel MOSFET one, when the voltage control (V control ) ( 14 ) is equal to the highest limit of the source voltage, the complementary control voltage (VControl ) ( 13 ) is equal to the lowest limit of the source supply and the switch is on, whereas when the voltage control (V control ) ( 14 ) is equal to the lowest limit, the complementary control voltage (VControl ) ( 13 ) is equal to the highest limit and the switch is off.

12. Switch circuit to obtain a duplicate dynamic range, according to claim 3 , characterized in that for the cases wherein the transistor is a BJT PNP or P channel MOSFET, when the voltage control (V control ) ( 14 ) is equal to the highest limit of the source voltage, the complementary control voltage (VControl ) ( 13 ) is equal to the lowest limit of the source voltage and the switch is off, whereas when the control voltage (V control ) ( 14 ) is equal to the lowest limit, the complementary control voltage (VControl ) ( 13 ) is equal to the highest limit and the switch is on.

13. Switch circuit to obtain a duplicate dynamic range, according to claim 5 , characterized in that for the cases wherein the transistor is a BJT PNP or P channel MOSFET, when the voltage control (V control ) ( 14 ) is equal to the highest limit of the source voltage, the complementary control voltage (VControl ) ( 13 ) is equal to the lowest limit of the source voltage and the switch is off, whereas when the control voltage (V control ) ( 14 ) is equal to the lowest limit, the complementary control voltage (VControl ) ( 13 ) is equal to the highest limit and the switch is on.

14. Switch circuit to obtain a duplicate dynamic range, according to claim 2 , characterized in that a unipolar source is applied to the switch circuit.

15. Switch circuit to obtain a duplicate dynamic range, according to claim 3 , characterized in that a unipolar source is applied to the switch circuit.

16. Switch circuit to obtain a duplicate dynamic range, according to claim 4 , characterized in that a unipolar source is applied to the switch circuit.

17. Switch circuit to obtain a duplicate dynamic range, according to claim 5 , characterized in that a unipolar source is applied to the switch circuit.

18. Switch circuit to obtain a duplicate dynamic range, according to claim 6 , characterized in that a unipolar source is applied to the switch circuit.

19. Switch circuit to obtain a duplicate dynamic range, according to claim 7 , characterized in that a unipolar source is applied to the switch circuit.

20. Switch circuit to obtain a duplicate dynamic range, according to claim 2 , characterized in that a bipolar source is applied to the switch circuit.

21. Switch circuit to obtain a duplicate dynamic range, according to claim 3 , characterized in that a bipolar source is applied to the switch circuit.

22. Switch circuit to obtain a duplicate dynamic range, according to claim 4 , characterized in that a bipolar source is applied to the switch circuit.

23. Switch circuit to obtain a duplicate dynamic range, according to claim 5 , characterized in that a bipolar source is applied to the switch circuit.

24. Switch circuit to obtain a duplicate dynamic range, according to claim 6 , characterized in that a bipolar source is applied to the switch circuit.

25. Switch circuit to obtain a duplicate dynamic range, according to claim 7 , characterized in that a bipolar source is applied to the switch circuit.

Assignments (3)
CHANGE OF NAME Recorded Aug 15, 2017
From: MARVELL HISPANIA, S.L.U.
To: MAXLINEAR HISPANIA, S.L.U.
Reel/Frame 043563/0064 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 9, 2010
From: DISENO DE SISTEMAS EN SILICIO, S. A.
To: MARVELL HISPANIA, S. L. U.
Reel/Frame 024965/0043 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 22, 2008
From: BLASCO CLARET, JORGE VICENTE; CAMPS SORIANO, JOSE LUIS; GONZALEZ MORENO, JOSE LUIS; ANDRES NAVARRO, FRANCISCO JOSE
To: DISENO DE SISTEMAS EN SILICIO, S.A.
Reel/Frame 020430/0563 →
Priority Claims (1)
ES 200402748 · Nov 16, 2004 · national
Continuity (1)
Related Publication 20090002047A1 · Jan 1, 2009