Semiconductor optical device and optical transmission module
View Patent ↗A semiconductor optical device has a semiconductor laser portion and a modulator portion which have different mesa structures. The mesa structure of the semiconductor laser portion is a ridge waveguide structure which has air around the mesa. The mesa structure of the modulator portion is a planarized ridge waveguide structure which has an organic insulator buried around the mesa.
1. A semiconductor optical device including an optical waveguide structure having a modulator and a semiconductor laser integrated on a same semiconductor substrate, wherein
the optical waveguide structure has a multiple quantum well,
in the optical waveguide structure, both the modulator and the semiconductor laser have a low-mesa ridge waveguide structure having a depth which is etched shallower than the multiple quantum well,
an organic insulator is buried on both sides of the ridge waveguide structure of the modulator, and
an organic insulator is not buried on both sides of the ridge waveguide structure of the semiconductor laser.
2. A semiconductor optical device including an optical waveguide structure having a modulator and a semiconductor laser integrated on a same semiconductor substrate, wherein
the optical waveguide structure has a multiple quantum well,
in the optical waveguide structure, both the modulator and the semiconductor laser have a low-mesa ridge waveguide structure having a depth which is etched shallower than the multiple quantum well,
on the modulator side, an organic insulator is provided in a direction perpendicular to a direction in which an electrode is arranged as seen from a center axis of an optical waveguide, and
on the semiconductor laser side, an organic insulator is not provided in a direction perpendicular to a direction in which an electrode is arranged as seen from a center axis of an optical waveguide.
3. The semiconductor optical device according to claim 1 , wherein, on the modulator side, the organic insulator is provided adjacent to an optical waveguide or a passivation film of the optical waveguide.
4. The semiconductor optical device according to claim 1 , wherein the organic insulator is a polyimide resin.
5. The semiconductor optical device according to claim 1 , wherein the organic insulator is a benzocyclobutene resin.
6. The semiconductor optical device according to claim 1 , wherein the modulator is one of an electro-absorption modulator and a Mach-Zehnder modulator.
7. The semiconductor optical device according to claim 1 , wherein the semiconductor laser is one of a distributed feedback laser and a distributed Bragg reflector laser.
8. The semiconductor optical device according to claim 1 , wherein at least one of the modulator and the semiconductor laser comprises a multi-quantum well formed of indium gallium arsenide or indium gallium aluminum arsenide.
9. The semiconductor optical device according to claim 1 , wherein the modulator is operable at a transmission rate of 2.5 Gbits/s or higher.
10. An optical transmission module having the semiconductor optical device of claim 1 .
11. A semiconductor optical device including an optical waveguide structure having a modulator and a semiconductor laser integrated on a same semiconductor substrate, wherein
the optical waveguide structure has a multiple quantum well,
in the optical waveguide structure, both the modulator and the semiconductor laser have a high-mesa ridge waveguide structure having a depth which is etched deeper than the multiple quantum well,
an organic insulator is buried on both sides of the ridge waveguide structure of the modulator, and
an organic insulator is not buried on both sides of the ridge waveguide structure of the semiconductor laser.
12. The semiconductor optical device according to claim 11 , wherein, on the modulator side, the organic insulator is provided adjacent to an optical waveguide or a passivation film of the optical waveguide.
13. The semiconductor optical device according to claim 11 , wherein the organic insulator is a polyimide resin.
14. The semiconductor optical device according to claim 11 , wherein the organic insulator is a benzocyclobutene resin.
15. The semiconductor optical device according to claim 11 , wherein the modulator is one of an electro-absorption modulator and a Mach-Zehnder modulator.
16. The semiconductor optical device according to claim 11 , wherein the semiconductor laser is one of a distributed feedback laser and a distributed Bragg reflector laser.
17. The semiconductor optical device according to claim 11 , wherein at least one of the modulator and the semiconductor laser comprises a multi-quantum well formed of indium gallium arsenide or indium gallium aluminum arsenide.
18. The semiconductor optical device according to claim 11 , wherein the modulator is operable at a transmission rate of 2.5 Gbits/s or higher.
19. A semiconductor optical device including an optical waveguide structure having a modulator and a semiconductor laser integrated on a same semiconductor substrate, wherein
the optical waveguide structure has a multiple quantum well,
in the optical waveguide structure, both the modulator and the semiconductor laser have a high-mesa ridge waveguide structure having a depth which is etched deeper than the multiple quantum well,
on the modulator side, an organic insulator is provided in a direction perpendicular to a direction in which an electrode is arranged as seen from a center axis of an optical waveguide, and
on the semiconductor laser side, an organic insulator is not provided in a direction perpendicular to a direction in which an electrode is arranged as seen from a center axis of an optical waveguide.