Ex-situ doped semiconductor transport layer
View Patent ↗A method of making an ex-situ doped semiconductor transport layer for use in an electronic device includes: growing a first set of semiconductor nanoparticles having surface organic ligands in a colloidal solution; growing a second set of dopant material nanoparticles having surface organic ligands in a colloidal solution; depositing a mixture of the first set of semiconductor nanoparticles and the second set of dopant material nanoparticles on a surface, wherein there are more semiconductor nanoparticles than dopant material nanoparticles; performing a first anneal of the deposited mixture of nanoparticles so that the organic ligands boil off the surfaces of the first and second set of nanoparticles; performing a second anneal of the deposited mixture so that the semiconductor nanoparticles fuse to form a continuous semiconductor layer and the dopant material atoms diffuse out from the dopant material nanoparticles and into the continuous semiconductor layer.
1. A method of making an ex-situ doped semiconductor transport layer for use in an electronic device comprising:
(a) growing a first set of semiconductor nanoparticles having surface organic ligands in a colloidal solution;
(b) growing a second set of dopant material nanoparticles having surface organic ligands in a colloidal solution;
(c) depositing a mixture of the first set of semiconductor nanoparticles and the second set of dopant material nanoparticles on a surface, wherein there are more semiconductor nanoparticles than dopant material nanoparticles;
(d) performing a first anneal of the deposited mixture of nanoparticles so that the organic ligands boil off the surfaces of the first and second set of nanoparticles; and
(e) performing a second anneal of the deposited mixture so that the semiconductor nanoparticles fuse to form a continuous semiconductor layer and the dopant material atoms diffuse out from the dopant material nanoparticles and into the continuous semiconductor layer to provide an ex-situ doped semiconductor transport layer.
2. The method of claim 1 wherein the semiconductor is selected from type IV, III-V, II-VI, or IV-VI semiconductor materials.
3. The method of claim 1 wherein the semiconductor is a type II-VI compound and the dopant material is a group Ia, Ib, III, or V element.
4. The method of claim 1 wherein the semiconductor is a type III-V compound and the dopant material is a group IIa, IIb, IV, or VI element.
5. The method claim 1 wherein the semiconductor is a type IV material and the dopant material is a group III or V element.
6. The method claim 1 wherein the semiconductor is a type IV-VI material and the dopant material is a group III or V element.
7. The method of claim 1 wherein the semiconductor nanoparticle is either a quantum dot, rod, wire or any multiply connected nanoparticle that shows quantum confinement effects.
8. The method of claim 1 wherein the dopant material nanoparticle is either a quantum dot, rod, wire or any multiply connected nanoparticle.
9. The method of claim 1 wherein the first anneal is at temperatures below 220° C.
10. The method of claim 1 wherein the second anneal is at temperatures between 250° C. and 500° C.
11. The method of claim 10 wherein the second anneal includes using either a tube furnace or a rapid thermal annealer.
12. A method of making an ex-situ doped semiconductor transport layer for use in an electronic device comprising:
(a) growing a first set of semiconductor nanoparticles having surface organic ligands in a colloidal solution;
(b) growing a second set of dopant material nanoparticles having surface organic ligands in a colloidal solution;
(c) performing ligand exchanges to cover the surfaces of the semiconductor and dopant material nanoparticles with organic ligands whose boiling points are below 200° C.;
(d) making a dispersion containing the ligand exchanged semiconductor and dopant material nanoparticles and an organic solvent, wherein there are more semiconductor nanoparticles than dopant material nanoparticles;
(e) coating the dispersion on a surface;
(f) performing a first anneal of the deposited mixture of nanoparticles so that the organic ligands boil off the surfaces of the semiconductor and dopant material nanoparticles; and
(g) performing a second anneal of the deposited mixture so that the semiconductor nanoparticles fuse to form a continuous semiconductor layer and the dopant material atoms diffuse out from the dopant material nanoparticles and into the continuous semiconductor layer to provide an ex-situ doped semiconductor transport layer.
13. The method of claim 12 wherein the exchanged ligand is pyridine.
14. The method of claim 12 wherein the solvent is polar.
15. The method of claim 12 wherein the dispersion is coated either by spin coating, drop casting, or inkjetting.
16. The method of claim 12 wherein the first anneal is at temperatures below 220° C.
17. The method of claim 12 wherein the second anneal is at temperatures between 250° C. and 500° C.