Group II alloyed I-III-VI semiconductor nanocrystal compositions and methods of making same
View Patent ↗A semiconductor nanocrystal composition that is stable and has high luminescent quantum yield. The semiconductor nanocrystal composition has a semiconductor nanocrystal core of a group II alloyed I-III-VI semiconductor nanocrystal material. A method of making a semiconductor nanocrystal composition is also provides which includes synthesizing a semiconductor nanocrystal core of a group II alloyed I-III-VI semiconductor material.
1. A semiconductor nanocrystal composition comprising:
a semiconductor nanocrystal core comprising a group II alloyed I-III-VI semiconductor material, wherein the semiconductor nanocrystal composition is electronically and chemically stable with a luminescent quantum yield of at least 25%.
2. The semiconductor nanocrystal composition of claim 1 , wherein the semiconductor nanocrystal core has an outer surface and the semiconductor nanocrystal composition further comprises:
a metal layer formed on at least a portion of the outer surface of the semiconductor nanocrystal core.
3. The semiconductor nanocrystal composition of claim 1 , wherein the semiconductor nanocrystal core has an outer surface and the semiconductor nanocrystal composition comprises:
a shell comprising a semiconductor material formed on the outer surface of the semiconductor nanocrystal core.
4. The semiconductor nanocrystal composition of claim 1 , wherein the semiconductor nanocrystal core has an outer surface and the semiconductor nanocrystal composition comprises:
a metal layer formed on the outer surface of the semiconductor nanocrystal core; and
a shell comprising a semiconductor material overcoating the metal layer.
5. The semiconductor nanocrystal composition of claim 1 , wherein the semiconductor nanocrystal core has an outer surface and the semiconductor nanocrystal composition comprises:
a metal layer formed on the outer surface of the semiconductor nanocrystal core; and
an outer coating comprising an anion layer overcoating the metal layer and a second metal layer overcoating the anion layer.
6. The semiconductor nanocrystal composition of claim 1 , wherein the semiconductor nanocrystal core comprises a quaternary or a quintary semiconductor material.
7. The semiconductor nanocrystal composition of claim 1 , wherein the semiconductor nanocrystal core comprises ZnCuInGaS 2 .
8. The semiconductor nanocrystal composition of claim 2 , wherein the metal layer comprises Zn.
9. The semiconductor nanocrystal composition of claim 3 , wherein the shell comprises Zn and S.
10. The semiconductor nanocrystal composition of claim 1 , wherein the luminescent quantum yield is at least 30%.
11. The semiconductor nanocrystal composition of claim 1 , wherein the luminescent quantum yield is at least 45%.
12. The semiconductor nanocrystal composition of claim 1 , wherein the luminescent quantum yield is at least 60%.
13. A semiconductor nanocrystal composition of claim 1 that emits light with a peak emission wavelength from 400 nm to 600 nm.
14. A substantially monodisperse population of semiconductor nanocrystal compositions, each semiconductor nanocrystal composition comprising:
a semiconductor nanocrystal core, the semiconductor nanocrystal core comprising a group II alloyed I-III-VI semiconductor material , wherein the semiconductor nanocrystal composition is stable with a luminescent quantum yield of at least 25%.
15. A method of making a semiconductor nanocrystal composition comprising:
synthesizing a semiconductor nanocrystal core comprising a group II alloyed I-III-VI semiconductor material, wherein the semiconductor nanocrystal core has an outer surface, and wherein the semiconductor nanocrystal composition has a luminescent quantum yield of at least 25%.
16. The method of claim 15 , further comprising:
forming a metal layer on at least a portion of the outer surface of the semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core.
17. The method of claim 15 , further comprising:
forming a shell on the outer surface of the semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core.
18. The method of claim 15 , further comprising:
forming a metal layer on the outer surface of the semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core; and
overcoating the metal layer with a shell comprising semiconductor material.
19. The method of claim 15 , further comprising:
forming a metal layer on the outer surface of the semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core; and
overcoating the metal layer with an outer coating comprising an anion layer and a second metal layer.
20. The method of claim 15 , wherein the Group II element and the Group VI element in the semiconductor material are derived from different precursors.