Method of preparing semiconductor nanocrystal compositions
View Patent ↗A semiconductor nanocrystal composition comprising a Group V to VI semiconductor material and a method of making same. The method includes synthesizing a semiconductor nanocrystal core, where the synthesizing includes dissolving a Group V to VI anion gas in a first solvent to produce a Group V to VI anion precursor, preparing a cation precursor, and reacting the Group V to VI anion precursor with the cation precursor in the presence of a second solvent. The reacting may occur in a high pressure vessel.
1. A method of making a semiconductor nanocrystal composition comprising:
synthesizing a semiconductor nanocrystal core, the synthesizing comprising:
dissolving a Group V to VI anion gas in a first solvent to produce a Group V to VI anion precursor,
preparing a cation precursor, and
reacting the Group V to VI anion precursor with the cation precursor in the presence of a second solvent.
2. The method of claim 1 , wherein the dissolving comprises:
dissolving a phosphine gas in the first solvent to produce a phosphine precursor.
3. The method of claim 1 , wherein the preparing comprises:
preparing an indium precursor.
4. The method of claim 1 , wherein the dissolving comprises:
using an alcohol, toluene, benzene, or any combination thereof as the first solvent.
5. The method of claim 1 , wherein the reacting comprises:
using a non-coordinating solvent, a coordinating solvent, or any combination thereof as the second solvent.
6. The method of claim 5 , wherein the using comprises:
using an octadecene, tetradecene, decane, decene, octane, octene, or any combination thereof as the non-coordinating solvent; and
using a trioctylphosphine oxide, trioctylphosphine, tributylphosphine, or any combination thereof as the coordinating solvent.
7. The method of claim 1 , wherein the dissolving comprises:
bubbling the Group V to VI anion gas through the first solvent.
8. The method of claim 1 , wherein the semiconductor nanocrystal composition is stable with a luminescent quantum yield of at least 25%.
9. The method of claim 1 , wherein the semiconductor nanocrystal core comprises indium phosphide.
10. The method of claim 1 , wherein the reacting occurs in a high pressure vessel.
11. The method of claim 10 , wherein the reacting occurs in the high pressure vessel at a temperature of between about 100° C. and 300° C. and a pressure of between about 10 and 3000 psi.
12. A method of making a semiconductor nanocrystal composition comprising:
synthesizing a semiconductor nanocrystal core having an outer surface, the synthesizing comprising:
dissolving a Group V to VI anion gas in a first solvent to produce a Group V to VI anion precursor,
preparing a cation precursor, and
reacting the Group V to VI anion precursor with the cation precursor in the presence of a second solvent; and forming a shell on the outer surface of the core.
13. The method of claim 12 , wherein the semiconductor nanocrystal composition is stable with a luminescent quantum yield of at least 25%.
14. The method of claim 12 , wherein the semiconductor nanocrystal core comprises indium phosphide.
15. The method of claim 12 , wherein the shell comprises zinc sulfide.
16. A method of making a semiconductor nanocrystal composition comprising:
synthesizing a semiconductor nanocrystal core having an outer surface, the synthesizing comprising:
dissolving a Group V to VI anion gas in a first solvent to produce a Group V to VI anion precursor, preparing a cation precursor, and
reacting the Group V to VI anion precursor with the cation precursor in the presence of a second solvent;
forming a metal layer on the outer surface of the semiconductor nano crystal core; and
overcoating the metal layer with the shell.
17. The method of claim 16 , wherein the metal layer comprises zinc.
18. A semiconductor nanocrystal composition manufactured according to the method of claim 1 .