Composite board with semiconductor chips and plastic housing composition and method

1. A method for producing semiconductor devices, comprising:

producing a semiconductor wafer;

separating the semiconductor wafer into a multiplicity of semiconductor chips having active top sides, edge sides and rear sides;

providing a carrier having a top side and an underside, the carrier having the form and dimensions of a wafer, and covering of its top side with an adhesive film, which is adhesive on both sides;

populating the carrier with semiconductor chips in semiconductor device positions, the semiconductor chips being fixed with their active top sides on the adhesive film in rows and columns;

providing a mould for surrounding the semiconductor chips with plastic housing composition, the mould having a lower part and an upper part and a molding cavity and the molding cavity having an upper contact area, which forms an interface with the top side of the plastic housing composition to be applied, the upper contact area being covered with a parting layer having essentially the same surface constitution and the same thermal conductivity as the adhesive film, with the result that a warpage of the composite board of less than 1% is obtained;

introducing of the carrier populated with the semiconductor chips into the molding cavity and embedding the semiconductor chips at least with their edge sides into the plastic housing composition with formation of a composite board having a top side which forms a coplanar area with the top sides of the semiconductor chips;

curing the plastic housing composition and removing the composite board from the mould;

removing the carrier with formation of a self-supporting warpage-free panel; and

separating the panel into individual semiconductor devices.

2. The method according to claim 1 , wherein an epoxy resin with a proportion of quartz glass as filler is used as the plastic housing composition.

3. The method according to claim 2 , wherein the proportion of the filler in the plastic housing composition amounts to 70-95 percent by mass.

4. The method according to claim 2 , wherein the particles that form the filler have a size distribution which satisfies the following relationship, the size distribution being given by the percentage proportion of the cumulative number of particles:

D 10 ≧ 1/10 ·D 50

D 90 ≦10 ·D 50 ,

where D 10 , D 50 and D 90 are particle diameters for cumulative numbers of particles.

5. method according to claim 1 , wherein the same material is used for the adhesive film and the parting layer.

6. The method for producing semiconductor devices, comprising:

separating a semiconductor wafer into a multiplicity of semiconductor chips having active top sides, edge sides and rear sides;

providing a carrier having a top side and an underside, and covering of its top side with an adhesive film, which is adhesive on both sides;

populating the carrier with semiconductor chips in semiconductor device positions, the semiconductor chips being fixed with their active top sides on the adhesive film in rows and columns;

providing a mould for surrounding the semiconductor chips with plastic housing composition, the mould having a lower part and an upper part and a molding cavity and the molding cavity having an upper contact area, which forms an interface with the top side of the plastic housing composition to be applied, the upper contact area being covered with a parting layer having essentially the same surface constitution and the same thermal conductivity as the adhesive film;

introducing of the carrier populated with the semiconductor chips into the molding cavity and embedding the semiconductor chips at least with their edge sides into the plastic housing composition with formation of a composite board having a top side;

curing the plastic housing composition and removing the composite board from the mould;

removing the carrier with formation of a self-supporting panel; and

separating the panel into individual semiconductor devices.