Integrated MEMS resonator device
View Patent ↗The present invention provides a method for manufacturing a micro-electro-mechanical system (MEMS) resonator device using the same device layer, dielectric layer, and conductive layer that is used to create other electrical devices in a complementary metal oxide semiconductor (CMOS) process.
1. A structure comprising:
a substrate having a device layer comprising a substantially freely suspended micro-electro-mechanical systems (MEMS) resonator body of a MEMS resonator device;
a dielectric layer over the device layer and comprising a gate dielectric for a gate of a field effect transistor (FET), and further comprising a dielectric plate for at least one transducer of the MEMS resonator device, such that the dielectric layer includes both the gate dielectric and the dielectric plate; and
a conductive layer comprising a gate electrode over the gate dielectric for the gate, and further comprising a transducer plate over the dielectric plate for the at least one transducer, such that the conductive layer includes both the gate electrode and the transducer plate,
wherein the field effect transistor is formed on the device layer and apart from the substantially freely suspended MEMS resonator body.
2. The structure of claim 1 wherein the at least one transducer includes an input transducer and an output transducer, such that the dielectric plate and the transducer plate are for the input transducer, and the dielectric layer further comprises a dielectric plate for the output transducer, wherein the dielectric layer includes both the dielectric plate for the input transducer and the dielectric plate for the output transducer.
3. The structure of claim 2 wherein the conductive layer further comprises a transducer plate for the output transducer, such that the transducer plate for the output transducer is over the dielectric plate for the output transducer and the conductive layer includes both the transducer plate for the input transducer and the transducer plate for the output transducer.
4. The structure of claim 3 further comprising a metal layer comprising a gate contact over the gate electrode for the gate, and further comprising a metal contact plate for the input transducer and a metal contact plate for the output transducer, such that the metal contact plate for the input transducer is over the transducer plate for the input transducer and the metal contact plate for the output transducer is over the transducer plate for the output transducer, wherein the metal layer includes the gate electrode, the metal contact plate for the input transducer, and the metal contact plate for the output transducer.
5. The structure of claim 1 further comprising a metal layer comprising a gate contact over the gate electrode for the gate, and further comprising a metal contact plate over the transducer plate for the at least one transducer of the MEMS resonator device, wherein the metal layer includes both the gate electrode and the metal contact plate.