Pressure sensor having gold-silicon eutectic crystal layer interposed between contact layer and silicon substrate
View Patent ↗A pressure sensor includes a gold-silicon eutectic crystal layer interposed between the contact layer and the silicon substrate. Because the contact layer and the silicon substrate are electrically connected to each other by using a gold-silicon eutectic reaction at the time of bonding the silicon substrate and the glass substrate, a contact resistance between the contact layer and the silicon substrate can be stabilized, and a Q value of the sensor can be stabilized. In addition, since the contact layer and the silicon substrate are bonded to each other by the gold-silicon eutectic reaction, the bonding strength is sufficient.
1. A capacitive pressure sensor comprising:
a glass substrate having a fixed electrode;
a silicon substrate having a movable electrode;
a bonded area between the glass substrate and the silicon substrate;
an extraction electrode formation area on the glass substrate for the movable electrode;
a contact layer extending from the bonded area to the extraction electrode formation area; and
a gold-silicon eutectic crystal layer provided between the contact layer and the silicon substrate in the bonded area.
2. The capacitive pressure sensor according to claim 1 , wherein the bonded area includes a recess portion and the contact layer is formed in the recess portion.
3. The capacitive pressure sensor according to claim 2 , wherein a depth of the recess portion is set so that the glass substrate and the contact layer are flush with each other at the time of forming the contact layer in the recess portion.
4. The capacitive pressure sensor according to claim 1 , wherein a gold layer is formed on the extraction electrode formation area of the contact layer in a state where the gold layer is separated from the gold-silicon eutectic crystal layer.
5. The capacitive pressure sensor according to claim 1 , wherein a distance from an outer end portion of a non-bonded area which is formed in the bonded area to an end portion of a cavity is 150 μm or more and a height of the contact layer protruding from a surface of the glass substrate is 3000 Åor less.
6. The capacitive pressure sensor according to claim 5 , wherein the bonded area has a recess portion and the contact layer is formed in the recess portion.
7. The capacitive pressure sensor according to claim 5 , wherein an interface between the glass substrate and the silicon substrate has one of a Si-Si bond or a Si-O bond.