IP Library Granted Patent US 7,602,036
Granted Patent B2
US 7,602,036 · App. 11/681,316 · Granted Oct 13, 2009

Trench type Schottky rectifier with oxide mass in trench bottom

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,602,036
App. No.
11/681,316
Granted
Oct 13, 2009
Kind
B2
Abstract

A trench type junction barrier rectifier has silicon dioxide spacers at the bottom of trenches in a silicon surface and beneath the bottom of a conductive polysilicon filler in the trench. A Schottky barrier electrode is connected to the tops of the mesas and the tops of the polysilicon fillers. Further oxide spacers may be formed in the length of the polysilicon fillers.

Claims (9)

1. A trench type Schottky barrier rectifier comprising an N type silicon wafer having a plurality of parallel openings therein, each opening including opposing sidewalls and a bottom surface, mesas between adjacent pairs of openings; a conductive polvsilicon mass of one of the conductivity types filling and in contact with said sidewalls of each said opening; insulation masses in the bottom of said openings and beneath said polysilicon masses to reduce the electric field in said mesas; and a Schottky barrier electrode extending across the tops of said mesas and the tops of said polysilicon masses.

2. The rectifier of claim 1 , wherein said silicon wafer has a high conductivity body and a top layer of epitaxial silicon of lower conductivity than that of said body; said openings being formed in said top layer.

3. The rectifier of claim 2 , which further includes in each opening a second insulation mass in the body of each said polysilicon mass spaced from a respective insulation mass.

4. The rectifier of claim 3 , wherein said openings are parallel spaced trenches.

5. The rectifier of claim 2 , wherein said openings are parallel spaced trenches.

6. The rectifier of claim 1 , which further includes in each opening a second insulation mass in the body of each said polvsilicon mass spaced from a respective insulation mass.

7. The rectifier of claim 6 , wherein said openings are parallel spaced trenches.

8. The rectifier of claim 1 , wherein said openings are parallel spaced trenches.

9. The rectifier of claim 1 , further comprising an anode electrode over said Schottky barrier electrode.

Assignments (2)
CHANGE OF NAME Recorded Jul 23, 2018
From: INTERNATIONAL RECTIFIER CORPORATION
To: INFINEON TECHNOLOGIES AMERICAS CORP.
Reel/Frame 046612/0968 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 5, 2007
From: SANFILIPPO, CARMELO; CARTA, ROSSANO
To: INTERNATIONAL RECTIFIER CORP.
Reel/Frame 018956/0185 →