IP Library Granted Patent US 7,524,746
Granted Patent B2
US 7,524,746 · App. 11/683,973 · Granted Apr 28, 2009

High-refractive index materials comprising semiconductor nanocrystal compositions, methods of making same, and applications therefor

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Quick Facts
Patent No.
US 7,524,746
App. No.
11/683,973
Granted
Apr 28, 2009
Kind
B2
Abstract

A high-refractive index material that includes semiconductor nanocrystal compositions. The high-refractive index material has at least one semiconductor nanocrystal composition incorporated in a matrix material and has a refractive index greater than 1.5. The semiconductor nanocrystal composition has a semiconductor nanocrystal core of a II-VI, III-V, or IV-VI semiconductor material. A method of making a high-refractive index material includes incorporating, at least one semiconductor nanocrystal composition in a matrix material. An application of a high-refractive index material includes incorporating at least one semiconductor nanocrystal composition in a matrix material to form the high-refractive index material and depositing the high-refractive index material on the surface of a lighting device.

Claims (42)

1. A high-refractive index material comprising at least one

semiconductor nanocrystal composition incorporated in a matrix material, wherein the high-refractive index material has a refractive index greater than 1.5, and wherein the semiconductor nanocrystal composition comprises:

(1) a semiconductor nanocrystal core comprising a II-VI, III-V, or IV-VI semiconductor material, the semiconductor nanocrystal core having an outer surface; and

(2) a metal layer grown on the outer surface of the semiconductor nanocrystal core, the metal layer having an outer surface.

2. The high-refractive index material of claim 1 , wherein the high-refractive index material has a refractive index greater than 1.5 at a wavelength of at least about 450 nm.

3. The high-refractive index material of claim 1 , wherein the high-refractive index material minimizes optical scattering.

4. The high-refractive index material of claim 1 , wherein the high-refractive index material is substantially non-absorbent to light at wavelengths in the range of about 380 nm to about 700 nm.

5. The high-refractive index material of claim 1 , wherein the high-refractive index material maintains the refractive index for more than about 5,000 hours.

6. The high-refractive index material of claim 1 , wherein the semiconductor nanocrystal composition further comprises a shell layer comprising a semiconductor material grown on the outer surface of the metal layer.

7. The high-refractive index material of claim 1 , wherein the semiconductor nanocrystal core comprises a binary semiconductor material.

8. The high-refractive index material of claim 7 , wherein the semiconductor nanocrystal core comprises ZnS.

9. The high-refractive index material of claim 1 , wherein the matrix material comprises a silicon, an epoxy, or a suitable combination thereof.

10. The high-refractive index material of claim 1 , herein the concentration of the semiconductor nanocrystal composition incorporated in the matrix material is up to 90%.

11. A method of making a high-refractive index material, comprising incorporating a plurality of semiconductor nanocrystal compositions in a matrix material, wherein the high-refractive index material has a refractive index greater than 1.5, and wherein the incorporating comprises:

attaching metal chelating groups of ligands surrounding the semiconductor nanocrystal compositions to the surfaces of the semiconductor nanocrystal compositions; and

reacting functional groups of the attached ligands with each other to link the semiconductor nanocrystal compositions together in the matrix material.

12. A method of making a high-refractive index material, comprising incorporating a plurality of semiconductor nanocrystal compositions in a matrix material, wherein the high-refractive index material has a refractive index greater than 1.5 and the incorporating comprises:

attaching metal chelating groups of ligands surrounding the semiconductor nanocrystal compositions to the surfaces of the semiconductor nanocrystal compositions; and

reacting functional groups of the attached ligands with functional groups of bridging molecules to link the semiconductor nanocrystal compositions together in the matrix material.

13. A method of making a high-refractive index material, comprising incorporating a plurality of semiconductor nanocrystal compositions in a matrix material, wherein the high-refractive index material has a refractive index greater than 1.5 and the incorporating comprises:

attaching metal chelating groups of ligands surrounding the semiconductor nanocrystal compositions to the surfaces of the semiconductor nanocrystal compositions; and

reacting functional groups of the attached ligands with functional groups of backbone molecules to link the semiconductor nanocrystal compositions together in the matrix material.

14. A method of making a high-refractive index material comprising: assembling a layer of semiconductor nanocrystal compositions onto a substrate; and sintering the layer to form a cohesive film on the substrate wherein the high-refractive index material has a refractive index greater than 1.5.

15. A method of making a solid-state lighting device, comprising:

(1) incorporating at least one semiconductor nanocrystal compositions in a matrix material to form a high-refractive index material, wherein the high-refractive index material has a refractive index greater than 1.5, and wherein the incorporating comprises:

(a) attaching metal chelating groups of ligands surrounding the semiconductor nanocrystal compositions to the surfaces of the semiconductor nanocrystal compositions, and

(b) reacting functional groups of the attached ligands with each other to link the semiconductor nanocrystal compositions together in the matrix material; and

(2) depositing the high-refractive index material onto the surface of a lighting device.

16. A method of making a solid-state lighting device, comprising:

(1) incorporating at least one semiconductor nanocrystal compositions in a matrix material to form a high-refractive index material, wherein the high-refractive index material has a refractive index greater than 1.5, and wherein the incorporating comprises:

(a) attaching metal chelating groups of ligands surrounding the semiconductor nanocrystal compositions to the surfaces of the semiconductor nanocrystal compositions, and

(b) reacting functional groups of the attached ligands with functional groups of bridging molecules to link the semiconductor nanocrystal compositions together in the matrix material; and

(2) depositing the high-refractive index material onto the surface of a lighting device.

17. A method of making a solid-state lighting device, comprising:

(1) incorporating at least one semiconductor nanocrystal compositions in a matrix material to form a high-refractive index material, wherein the high-refractive index material has a refractive index greater than 1.5 , and wherein the incorporating comprises:

(a) attaching metal chelating groups of ligands surrounding the semiconductor nanocrystal compositions to the surfaces of the semiconductor nanocrystal compositions; and

(b) reacting functional groups of the attached ligands with functional groups of backbone molecules to link the semiconductor nanocrystal compositions together in the matrix material; and

(2) depositing the high-refractive index material onto the surface of a lighting device.

18. A high refractive index material comprising:

a plurality of semiconductor nanocrystal compositions incorporated in a matrix material, wherein the high-refractive index material has a refractive index greater than 1.5 , and wherein the semiconductor nanocrystal compositions are linked through bonds between functional groups of metal chelating groups-containing ligands attached to the semiconductor nanocrystal compositions.

19. A high refractive index material comprising:

a plurality of semiconductor nanocrystal compositions incorporated in a matrix material, wherein the high-refractive index material has a refractive index greater than 1.5, and wherein the semiconductor nanocrystal compositions are linked through bonds between functional groups of metal chelating groups-containing ligands attached to the semiconductor nanocrystal compositions and bridging molecules.

Assignments (7)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 16, 2011
From: EVIDENT TECHNOLOGIES, INC.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 025921/0558 →
RELEASE OF SECURITY INTEREST Recorded Dec 17, 2010
From: LC CAPITAL MASTER FUND, LTD; OPALKA FAMILY INVESTMENT PARTNERS, LP; ROBB, WALTER L.; SINGER CHILDREN'S MANAGEMENT TRUST; CHALIS CAPITAL LLC; BAZCO, LLC; BIRCH HOLDINGS, LLC; SOLA LTD
To: EVIDENT TECHNOLOGIES, INC.
Reel/Frame 025521/0260 →
RELEASE OF SECURITY INTEREST Recorded Nov 5, 2010
From: JOHN JOSEPH GORMAN V TRUST; TEJAS SECURITIES GROUP, INC.; RYLEIGH GORMAN TRUST; GREYWOLF CAPITAL PARTNERS II, LP; LC CAPITAL MASTER FUND, LTD; MILLENIUM FIXED INCOME, LP; OPALKA FAMILY INVESTMENT PARTNERS, LP; ROBB, WALTER L.; SINGER CHILDREN'S MANAGEMENT TRUST; NICKOLL, BENJAMIN E.; WAHL, FREDERICK; COLTON, JOHN J.; WOLF, MICHAEL; WEISS, MORRIS; PASSERETTI, ZACHARY MD; CHALIS CAPITAL LLC; BAZCO, LLC; SOLA LTD
To: EVIDENT TECHNOLOGIES, INC.
Reel/Frame 025321/0665 →
RELEASE OF SECURITY INTEREST Recorded Nov 5, 2010
From: JOHN JOSEPH GORMAN V TRUST; TEJAS SECURITIES GROUP, INC. 401K PLAN AND TRUST FBO JOHN J. GORMAN, JOHN GORMAN TRUSTEE; RYLEIGH GORMAN TRUST; GREYWOLF CAPITAL PARTNERS II, LP; LC CAPITAL MASTER FUND, LTD; MILLENIUM FIXED INCOME, LP; OPALKA FAMILY INVESTMENT PARTNERS, LP; WALTER L. ROBB; SINGER CHILDREN'S MANAGEMENT TRUST; BENJAMIN E. NICKOLL; FREDERICK WAHL; JOHN J. COLTON; MICHAEL WOLF; MORRIS WEISS; ZACHARY PASSERETTI, MD; CHALIS CAPITAL LLC; BAZCO, LLC; BIRCH HOLDINGS, LLC; SOLA LTD
To: EVIDENT TECHNOLOGIES, INC.
Reel/Frame 025320/0871 →
SECURITY AGREEMENT Recorded May 26, 2010
From: EVIDENT TECHNOLOGIES
To: LC CAPITAL MASTER FUND, LTD; OPALKA FAMILY INVESTMENT PARTNERS, LP; WALTER L. ROBB C/O VANTAGE MANAGEMENT, INC.; SINGER CHILDREN'S MANAGEMENT TRUST C/O ROMULUS HOLDINGS INC.; CHALIS CAPITAL LLC; BAZCO, LLC; BIRCH HOLDINGS, LLC; SOLA LTD C/O SOLUS ALTERNATIVE ASSET MANAGEMENT LP
Reel/Frame 024434/0534 →
PATENT COLLATERAL SECURITY AGREEMENT Recorded Jan 9, 2008
From: EVIDENT TECHNOLOGIES, INC.
To: JOHN JOSEPH GORMAN V TRUST; TEJAS SECURITIES GROUP, INC. 401K PLAN AND TRUST FBO JOHN J. GORMAN, JOHN GORMAN TRUSTEE; RYLEIGH GORMAN TRUST; GREYWOLF CAPITAL PARTNERS II, LP; LC CAPITAL MASTER FUND, LTD; MILLENIUM FIXED INCOME, LP; OPALKA FAMILY INVESTMENT PARTNERS, LP; ROBB, WALTER L.; SINGER CHILDREN'S MANAGEMENT TRUST; NICKOLL, BENJAMIN E.; WAHL, FREDERICK; COLTON, JOHN J.; WOLF, MICHAEL; WEISS, MORRIS; PASSARETTI, ZACHARY, MD; CHALIS CAPITAL LLC; BAZCO, LLC; BIRCH HOLDINGS, LLC; SOLA LTD
Reel/Frame 020339/0174 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 9, 2007
From: LOCASCIO, MICHAEL; GILLIES, JENNIFER; HINES, MARGARET
To: EVIDENT TECHNOLOGIES, INC.
Reel/Frame 019269/0524 →