High efficiency rectifier
View Patent ↗A high-efficiency power semiconductor rectifier device ( 10 ) comprising a δP++ layer ( 12 ), a P-body ( 14 ), an N-drift region ( 16 ), an N+ substrate ( 18 ), an anode ( 20 ), and a cathode ( 22 ). The method of fabricating the device ( 10 ) comprises the steps of depositing the N-drift region ( 16 ) on the N+ substrate ( 18 ), implanting boron into the N-drift region ( 16 ) to create a P-body region ( 14 ), forming a layer of titanium silicide ( 56 ) on the P-body region ( 14 ), and concentrating a portion of the implanted boron at the interface region between the layer of titanium silicide ( 56 ) and the P-body region ( 14 ) to create the δP++ layer ( 12 ) of supersaturated P-doped silicon.
1. A two-terminal semiconductor rectifier device comprising:
a δP++ layer;
a P-body located substantially below and adjacent to the δP++ layer;
an N-drift region located substantially below and adjacent to the P-body region;
an N+ substrate located substantially below the N-drift region;
a region of higher-order silicide located substantially above and adjacent to the δP++ layer;
a layer of oxide functioning as a gate dielectric located substantially above and adjacent to one or more of the N-drift region, the P-body, the δP++ layer, and the region of titanium silicide;
a layer of polysilicon located substantially above and adjacent to the layer of oxide; and
a layer of titanium located substantially above and adjacent to the layer of polysilicon.
2. The semiconductor rectifier device as set forth in claim 1 , wherein the titanium has a thickness of approximately 300 Å.
3. The semiconductor rectifier device as set forth in claim 1 , further including a layer of titanium nitride located substantially above and adjacent to the layer of titanium.
4. The semiconductor rectifier device as set forth in claim 2 , wherein the layer of titanium nitride has a thickness of approximately 500 Å.