Rewritable optical recording medium and optical recording method
View Patent ↗A rewritable optical recording medium including: a substrate having a guide groove formed thereon, a phase-change type recording layer, a portion in a crystalline state of the phase-change type recording layer corresponds to an unrecorded or erased state, and a portion in an amorphous state of the phase-change type recording layer corresponds to a recorded state, so that an amorphous mark corresponding to the recorded state is formed upon irradiation with a recording laser beam. The phase-change type recording layer contains Sb as a main component, and further contains Ge and/or Te, a content of Ge is from 1 atomic % to 30 atomic %, and a content of Te is from 10 atomic % to 30 atomic %, and in the phase-change type recording layer, Sb/Te is at least 4.5, and the atomic ratio of Ge to Te is from 1:3 to 1:20.
1. A rewritable optical recording medium comprising:
a substrate having a guide groove formed thereon;
a phase-change type recording layer, a portion in a crystalline state of the phase-change type recording layer corresponds to an unrecorded or erased state, and a portion in an amorphous state of the phase-change type recording layer corresponds to a recorded state, so that an amorphous mark corresponding to the recorded state is formed upon irradiation with a recording laser beam;
the phase-change type recording layer contains an alloy having, as a main component, a composition represented by Ge y (Sb x Te 1−x ) 1−y (where 0.01<y<0.06 and 0.85<x<0.9), wherein Ge ranges from 1 atomic % to 30 atomic %, and Te ranges from 10 atomic % to 30 atomic %; and the phase-change type recording layer contains at least 10 atomic % of Te, Sb/Te is at least 4.5, and the atomic ratio of Ge to Te is from 1:3 to 1:20.
2. The rewritable optical recording medium according to claim 1 , wherein when the rewritable optical recording medium is subjected to initial crystallization by a laser beam, the initial crystallization is carried out by irradiating the laser beam so that the linear velocity of the optical recording medium to the laser beam is from 0.1 m/s to 3 m/s.
3. The rewritable optical recording medium according to claim 1 , wherein the phase-change type recording layer further comprises an alloy having a composition represented by M z Ge y (Sb x Te 1−x ) 1−y−z where 0.01≦z≦0.1, 0.01≦y≦0.06 and 0.82≦x≦0.9, and M represents at least one element selected from the group consisting of Ga and In.
4. The rewritable optical recording medium according to claim 1 , wherein the Sb/Te ratio is within a range from 5.5 to 7.3.
5. The rewritable optical recording medium according to claim 1 , wherein a thickness of the phase-change type recording layer is from 10 to 30 nm.
6. The rewritable optical recording medium according to claim 1 , wherein the rewritable optical recording medium further has a reflective layer, and a sheet resistivity of the reflective layer is from 0.05Ω/□ to 0.2Ω/□.
7. The rewritable optical recording medium according to claim 1 , wherein each of a modulation m 11 and a reflectivity R top in the crystalline state maintains at least 90% of its initial value, even after being held in an accelerated test environment at a temperature of 105° C. for 3 hours.
8. A rewritable optical recording medium comprising:
a substrate having a guide groove formed thereon;
a phase-change type recording layer, a portion in a crystalline state of the phase-change type recording layer corresponds to an unrecorded or erased state, and a portion in an amorphous state of the phase-change type recording layer corresponds to a recorded state, so that an amorphous mark corresponding to the recorded state is formed upon irradiation with a recording laser beam;
the phase-change type recording layer contains Sb as a main component, and further contains Ge and/or Te, a content of Te is less than 10 atomic %, and a content of Ge is from 1 atomic % to 30 atomic %; and
the phase-change type recording layer is made of an alloy having, as a main component, a composition represented by Te γ M1 β (Ge α Sb 1−α ) 1−β−γ (where 0.01≦α≦0.3, 0≦β≦0.3, 0≦γ≦0.1, 2≦β/γ and 0<β+γ≦0.4, and M1 represents one element selected from the group consisting of In, Ga and Sn.
9. The rewritable optical recording medium according to claim 8 , wherein a thickness of the phase-change type recording layer is from 10 to 30 nm.
10. The rewritable optical recording medium according to claim 8 , wherein the rewritable optical recording medium further has a reflective layer, and a sheet resistivity of the reflective layer is from 0.05Ω/□ to 0.2Ω/□.
11. The rewritable optical recording medium according to claim 8 , wherein each of a modulation m 11 and a reflectivity R top in the crystalline state maintains at least 90% of an initial value, even after being held in an accelerated test environment at a temperature of 105° C. for 3 hours.