IP Library Granted Patent US 7,622,733
Granted Patent B2
US 7,622,733 · App. 11/685,005 · Granted Nov 24, 2009

Semiconductor structure with a plastic housing and separable carrier plate

Assignee: Infineon Technologies AG
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Quick Facts
Patent No.
US 7,622,733
App. No.
11/685,005
Granted
Nov 24, 2009
Kind
B2
Abstract

A semiconductor structure includes: a carrier plate; a thermosensitive adhesive coupled to a top surface of the carrier plate, which is removable from the carrier plate at a predetermined, defined temperature at which the thermosensitive adhesive loses its adhesive action; semiconductor chips having active top surfaces and back surfaces, where the active top surfaces include contact surfaces disposed on the thermosensitive adhesive; and a plastic embedding compound on the carrier plate, in which the semiconductor chips are embedded.

Claims (38)

1. A semiconductor structure, comprising:

a earner plate;

a thermosensitive adhesive coupled to a top surface of the carrier plate, the thermosensitive adhesive being removable from the carrier plate at a predetermined, defined temperature at which the thermosensitive adhesive loses its adhesive action;

a plurality of semiconductor chips having active top surfaces and back surfaces, the active top surfaces including contact surfaces disposed on the thermosensitive adhesive;

a common carrier comprising a plastic embedding compound on the carrier plate, the semiconductor chips being embedded in the plastic embedding compound; and

an adhesive film laminated to the top surface of the carrier plate, the adhesive film being provided with the thermosensitive adhesive on a side facing away from the carrier plate and being provided with a permanent adhesive on a side facing the carrier plate.

2. The semiconductor structure of claim 1 , wherein the carrier plate comprises a material that is dimensionally stable in a temperature range from 20° C. to 200° C., has a low coefficient of thermal expansion, and is provided with a thermosensitive adhesive on its top surface.

3. The semiconductor structure of claim 2 , wherein the dimensionally stable material has a coefficient of thermal expansion α<10·10 −6 /K at room temperature.

4. The semiconductor structure of claim 2 , wherein the dimensionally stable material has a thermal conductivity σ>100 W/mK at room temperature.

5. The semiconductor structure of claim 2 , wherein the dimensionally stable material provided is a ceramic.

6. The semiconductor structure of claim 2 , wherein the dimensionally stable material provided is a metal or an alloy.

7. The semiconductor structure of claim 2 , wherein the dimensionally stable material provided is glass or silicon.

8. A semiconductor structure, comprising:

a carrier plate;

a thermosensitive adhesive coupled to a top surface of the carrier plate, the thermosensitive adhesive being removable from the carrier plate at a predetermined, defined temperature at which the thermosensitive adhesive loses its adhesive action;

a plurality of semiconductor chips having active top surfaces and back surfaces, the active top surfaces including contact surfaces disposed on the thermosensitive adhesive;

a common carrier comprising a plastic embedding compound on the carrier plate, the semiconductor chips being embedded in the plastic embedding compound; and

an adhesive film laminated to the top surface of the carrier plate, the adhesive film including a permanent adhesive on a side facing away from the carrier plate and including the thermosensitive adhesive on a side facing the carrier plate.

9. The semiconductor structure of claim 8 , wherein the thermosensitive adhesive is in direct contact with the top surface of the carrier plate.

10. A semiconductor structure, comprising:

a earner plate;

a plurality of semiconductor chips having active top surfaces and back surfaces, the active top surfaces including contact surfaces;

a common carrier comprising a plastic embedding compound on the carrier plate, the semiconductor chips being embedded in the plastic embedding compound;

a thermosensitive adhesive disposed between the carrier plate and the plastic embedding compound of the common carrier, wherein the contact surfaces of the semiconductor chips are disposed on the thermosensitive adhesive and the thermosensitive adhesive is removable from the carrier plate at a predetermined, defined temperature at which the thermosensitive adhesive loses its adhesive action; and

an adhesive film laminated to the top surface of the carrier plate, the adhesive film including a permanent adhesive on a side facing away from the carrier plate and including the thermosensitive adhesive on a side facing the carrier plate.

11. The semiconductor structure of claim 10 , wherein the carrier plate comprises a material that is dimensionally stable in a temperature range from 20° C. to 200° C., has a low coefficient of thermal expansion, and is provided with a thermosensitive adhesive on its top surface.

12. The semiconductor structure of claim 11 , wherein the dimensionally stable material has a coefficient of thermal expansion α<10·10 −6 /K at room temperature.

13. The semiconductor structure of claim 11 , wherein the dimensionally stable material has a thermal conductivity σ>100 W/mK at room temperature.

14. The semiconductor structure of claim 11 , wherein the dimensionally stable material provided is a ceramic.

15. The semiconductor structure of claim 11 , wherein the dimensionally stable material provided is a metal or an alloy.

16. The semiconductor structure of claim 11 , wherein the dimensionally stable material provided is glass or silicon.

17. A semiconductor structure, comprising:

a carrier plate;

a plurality of semiconductor chips having active top surfaces and back surfaces, the active top surfaces including contact surfaces;

a common carrier comprising a plastic embedding compound on the carrier plate, the semiconductor chips being embedded in the plastic embedding compound;

a thermosensitive adhesive disposed between the carrier plate and the plastic embedding compound of the common carrier, wherein the contact surfaces of the semiconductor chips are disposed on the thermosensitive adhesive and the thermosensitive adhesive is removable from the carrier plate at a predetermined, defined temperature at which the thermosensitive adhesive loses its adhesive action; and

an adhesive film laminated to the top surface of the carrier plate, the adhesive film being provided with the thermosensitive adhesive on a side facing away from the carrier plate and being provided with a permanent adhesive on a side facing the carrier plate.

18. The semiconductor structure of claim 10 , wherein the thermosensitive adhesive is in direct contact with the top surface of the carrier plate.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 29, 2022
From: INTEL DEUTSCHLAND GMBH
To: INTEL CORPORATION
Reel/Frame 061356/0001 →
CHANGE OF NAME Recorded Nov 6, 2015
From: INTEL MOBILE COMMUNICATIONS GMBH
To: INTEL DEUTSCHLAND GMBH
Reel/Frame 037057/0061 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 19, 2012
From: INTEL MOBILE COMMUNICATIONS TECHNOLOGY GMBH
To: INTEL MOBILE COMMUNICATIONS GMBH
Reel/Frame 027556/0709 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 18, 2012
From: INFINEON TECHNOLOGIES AG
To: INTEL MOBILE COMMUNICATIONS TECHNOLOGY GMBH
Reel/Frame 027548/0623 →
Priority Claims (1)
DE 103 34 576 · Jul 28, 2003 · national
Continuity (3)
Division 1134189500 · Jan 30, 2006
Continuation PCTDE200400166700 · Jul 27, 2004
Related Publication 20070145555A1 · Jun 28, 2007