Ferroelectric memory device and method for manufacturing ferroelectric memory device
A ferroelectric memory device is equipped with a ferroelectric capacitor having a first electrode, a second electrode, and a ferroelectric layer between the first and second electrodes, and the ferroelectric memory device includes: a wiring that is connected to one of the first electrode and the second electrode, wherein the wiring includes a first wiring layer composed of titanium nitride oriented along a <111> direction, and a second wiring layer formed on the first wiring and composed of titanium aluminum nitride orientated along a <111> direction.
1. A ferroelectric memory device, comprising:
a substrate;
a ferroelectric capacitor formed on a substrate;
a barrier layer disposed directly between the ferroelectric capacitor and the substrate, the barrier layer having a composition expressed by Ti( 1-x )Al x N y (0<x ≦0.3, 0 <y);
a first wiring layer disposed above and connected to the ferroelectric capacitor, the first wiring layer including titanium nitride, and being oriented in a <111> direction; and
a second wiring layer formed above the first wiring layer, the second wiring layer including titanium aluminum nitride, a composition of which is expressed by Ti( 1-x )Al x N y (0<x ≦0.3, y=1.5), and being oriented in a <111> direction.
2. The ferroelectric memory device according to claim 1 , a thickness of first wiring layer being within a range of 5 nm to 50 nm.
3. The ferroelectric memory device according to claim 1 , further comprising:
a transistor formed above the substrate;
a first interlayer dielectric film formed between the ferroelectric capacitor and the substrate;
a contact plug formed in the first interlayer dielectric film, the contact plug electrically connecting the transistor and the ferroelectric capacitor; and
a second interlayer dielectric film formed between the first wiring layer and the first interlayer dielectric film and covering a portion of the ferroelectric capacitor.
4. A ferroelectric memory device, comprising:
a substrate;
a first interlayer dielectric film formed above the substrate, the first interlayer dielectric film including a contact plug;
a barrier layer formed above the first interlayer dielectric film, the barrier layer including TiAIN and being oriented in a <111> direction;
a first electrode formed above the barrier layer, the first electrode being oriented in a <111> direction;
a ferroelectric layer formed above the first electrode, the ferroelectric layer being oriented in a <111> direction;
a second electrode formed above the ferroelectric layer, the first electrode, the ferroelectric layer and the second electrode forming a ferroelectric capacitor;
a second interlayer dielectric film formed above the first interlayer dielectric film, the second interlayer dielectric film covering a portion of the capacitor;
a first wiring layer formed above the second interlayer dielectric and electrically connected to the ferroelectric capacitor, the first wiring layer including titanium nitride and being oriented in a <111> direction; and
a second wiring layer formed above the first wiring layer, the second wiring layer including titanium aluminum nitride, a composition of which is expressed by Ti( 1-x )Al x N y (0<x ≦0.3, y=1.5) and being oriented in a <111> direction.
5. The ferroelectric memory device according to claim 4 , the ferroelectric layer including a PZT.
6. The ferroelectric memory device according to claim 4 , the contact plug and the first interlayer dielectric layer being treated by ammonia plasma.
7. The ferroelectric memory device according to claim 4 , the second interlayer dielectric film including an opening portion formed above the ferroelectric capacitor, the first wiring being extended into the opening portion and electrically connected to the ferroelectric capacitor, the second interlayer dielectric film being treated by ammonia plasma.
8. The ferroelectric memory device according to claim 4 , the contact plug including tungsten.