Ambient light detectors using conventional CMOS image sensor process

1. A light detector to detect light within a first range of wavelengths, comprising:

a first sensor including complementary-metal-oxide semiconductor (CMOS) photocells that are covered by a colored filter layer of a first color that has a first transmittance that allows both light within the first range of wavelengths and light outside the first range of wavelengths to pass; and

a second sensor including further CMOS photocells, which include both a first group of CMOS photocells and a second group of CMOS photocells,

wherein the first group of the CMOS photocells of the second sensor are covered by both a colored filter layer of the first color and a colored filter layer of a second color, stacked one above the other in either order, where the colored filter layer of the second color has a second transmittance that allows at least a first portion of the light outside the first range of wavelengths to pass, and

wherein the second group of the CMOS photocells of the second sensor are covered by both a colored filter layer of the first color and a colored filter layer of a third color, stacked one above the other in either order, where the colored filter layer of the third color has a third transmittance that allows at least a second portion of the light outside the first range of wavelengths to pass; and

wherein the CMOS photocells of the first sensor are not covered by a colored filter layer of the second color;

wherein the CMOS photocells of the first sensor are not covered by a colored filter layer of the third color;

wherein the first group of the CMOS photocells of the second sensor are not covered by the colored filter layer of the third color;

wherein the second group of the CMOS photocells of the second sensor are not covered by the colored filter layer of the second color;

wherein when light both within the first range of wavelengths and outside the first range of wavelengths is incident upon the detector

the first sensor, which includes CMOS photocells that are covered by the colored filter layer of the first color, produces a first photocurrent (i 1 ),

the first group of the CMOS photocells of the second sensor, which are covered by both the colored filter layer of the first color and the colored filter layer of the second color, produce a second photocurrent (i 2 ), and

the second group of the CMOS photocells of the second sensor, which are covered by both the colored filter layer of the first color and the colored filter layer of the third color, produce a third photocurrent (i 3 ); and

further comprising circuitry configured to receive the first photocurrent (i 1 ), the second photocurrent (i 2 ) and the third photocurrent (i 3 ), and configured to produce a differential photocurrent indicative of a difference between the first photocurrent and a summation of the second and third photocurrents, wherein the differential photocurrent has a spectral response with at least a majority of the light outside the first range of wavelengths cancelled.

2. The detector of claim 1 , wherein the colored filter layers are deposited over the CMOS photocells.

3. The light detector of claim 1 , wherein:

light within the first range of wavelengths includes visible light wavelengths; and

light outside the first range of wavelengths includes infrared (IR) light wavelengths.

4. The detector of claim 1 , wherein:

the first color is green;

the second color is red; and

the third color is black.

5. A light detector to detect light within a first range of wavelengths, comprising:

a first sensor including complementary-metal-oxide semiconductor (CMOS) photocells that are covered by a colored filter layer of a first color that has a first transmittance that allows both light within the first range of wavelengths and light outside the first range of wavelengths to pass; and

a second sensor including further CMOS photocells, which include both a first group of CMOS photocells and a second group of CMOS photocells,

wherein the first group of the CMOS photocells of the second sensor are covered by both a colored filter layer of the first color and a colored filter layer of a second color, stacked one above the other in either order, where the colored filter layer of the second color has a second transmittance that allows at least a first portion of the light outside the first range of wavelengths to pass, and

wherein the second group of the CMOS photocells of the second sensor are covered by both a colored filter layer of the first color and a colored filter layer of a third color, stacked one above the other in either order, where the colored filter layer of the third color has a third transmittance that allows at least a second portion of the light outside the first range of wavelengths to pass;

wherein the CMOS photocells of the first sensor are not covered by a colored filter layer of the second color;

wherein the CMOS photocells of the first sensor are not covered by a colored filter layer of the third color;

wherein the first group of the CMOS photocells of the second sensor are not covered by the colored filter layer of the third color;

wherein the second group of the CMOS photocells of the second sensor are not covered by the colored filter layer of the second color;

wherein the first sensor produces a first photocurrent, and the second sensor produces a second photocurrent, when light both within the first range of wavelengths and outside the first range of wavelengths is incident upon the detector;

wherein a differential photocurrent, produced by determining a difference between the first and second photocurrents, has a spectral response with at least a majority of the light outside the first range of wavelengths cancelled;

wherein the colored filter layer of the first color comprises a green filter layer;

wherein the colored filter layer of the second color comprises a red filter layer;

wherein the colored filter layer of the third color comprises a black filter layer;

wherein the first sensor, which includes CMOS photocells that are covered by the green filter layer, detects both visible light wavelengths and infrared (IR) light wavelengths; and

wherein the second sensor, which includes the first group of CMOS photocells that are covered by both the green filter layer and the red filter layer stacked one above the other in either order, and the second group of CMOS photocells that are covered by the green filter layer and the black filter layer stacked one above the other in either order, primarily detects IR light wavelengths.

6. The light detector of claim 5 , wherein:

the green filter layer has a first thickness;

the red filter layer has a second thickness;

the black filter layer has a third thickness; and

the first, second and third thicknesses are selected such that the spectral response of the differential photocurrent is from about 400 nm to about 700 nm with a peak response at about 550 nm, which is substantially similar to a known spectral response of a human eye.

7. An ambient light detector, comprising:

a first sensor including complementary-metal-oxide semiconductor (CMOS) photocells that are covered by a colored filter layer of a first color that allows both visible and infrared (IR) light to pass; and

a second sensor including further CMOS photocells, which include both a first group of CMOS photocells and a second group of CMOS photocells,

wherein the first group of the CMOS photocells of the second sensor are covered by both a colored filter layer of the first color and a colored filter layer of a second color, stacked one above the other in either order, where the colored filter layer of the second color allows at least a first portion of IR light to pass, and

wherein the second group of the CMOS photocells of the second sensor are covered by both a colored filter layer of the first color and a colored filter layer of a third color, stacked one above the other in either order, where the colored filter layer of the third color allows at least a second portion of IR light to pass;

wherein the CMOS photocells of the first sensor are not covered by a colored filter layer of the second color;

wherein the CMOS photocells of the first sensor are not covered by a colored filter layer of the third color;

wherein the first group of the CMOS photocells of the second sensor are not covered by the colored filter layer of the third color;

wherein the second group of the CMOS photocells of the second sensor are not covered by the colored filter layer of the second color;

wherein when light including both visible and IR light is incident upon the detector

the first sensor, which includes CMOS photocells that are covered by the colored filter layer of the first color, produces a first photocurrent (i 1 ),

the first group of the CMOS photocells of the second sensor, which are covered by both the colored filter layer of the first color and the colored filter layer of the second color, produce a second photocurrent (i 2 ), and

the second group of the CMOS photocells of the second sensor, which are covered by both the colored filter layer of the first color and the colored filter layer of the third color, produce a third photocurrent (i 3 ); and

further comprising circuitry configured to receive the first photocurrent (i 1 ), the second photocurrent (i 2 ) and the third photocurrent (i 3 ), and configured to produce a differential photocurrent indicative of a difference between the first photocurrent and a summation of the second and third photocurrents, wherein the differential photocurrent has a spectral response with at least a significant part of the IR light cancelled.

8. The detector of claim 7 , wherein the colored filter layers are deposited over the CMOS photocells.

9. The detector of claim 7 , wherein:

the filter layer of the first color has a first thickness;

the filter layer of the second color has a second thickness;

the filter layer of the third color has a third thickness; and

the first, second and third thicknesses are selected such that the spectral response of the differential photocurrent is from about 400 nm to about 700 nm with a peak response at about 550 nm, which is substantially similar to a known spectral response of a human eye.

10. An ambient light detector, comprising:

a first sensor including complementary-metal-oxide semiconductor (CMOS) photocells that are covered by a colored filter layer of a first color that allows both visible and infrared (IR) light to pass; and

a second sensor including further CMOS photocells, which include both a first group of CMOS photocells and a second group of CMOS photocells,

wherein the first group of the CMOS photocells of the second sensor are covered by both a colored filter layer of the first color and a colored filter layer of a second color, stacked one above the other in either order, where the colored filter layer of the second color allows at least a first portion of IR light to pass, and

wherein the second group of the CMOS photocells of the second sensor are covered by both a colored filter layer of the first color and a colored filter layer of a third color, stacked one above the other in either order, where the colored filter layer of the third color allows at least a second portion of IR light to pass;

wherein the CMOS photocells of the first sensor are not covered by a colored filter layer of the second color;

wherein the CMOS photocells of the first sensor are not covered by a colored filter layer of the third color;

wherein the first group of the CMOS photocells of the second sensor are not covered by the colored filter layer of the third color;

wherein the second group of the CMOS photocells of the second sensor are not covered by the colored filter layer of the second color;

wherein the first sensor produces a first photocurrent, and the second sensor produces a second photocurrent, when light including both visible and IR light is incident upon the detector;

wherein a differential photocurrent, produced by determining a difference between the first and second photocurrents, has a spectral response with at least a significant part of the IR light cancelled;

wherein the first color is green;

wherein the second color is red; and

wherein the third color is black.

11. The detector of claim 10 , wherein:

the green filter layer has a first thickness;

the red filter layer has a second thickness;

the black filter layer has a third thickness; and

the first, second and third thicknesses are selected such that the spectral response of the differential photocurrent is from about 400 nm to about 700 nm with a peak response at about 550 nm, which is substantially similar to a known spectral response of a human eye.

12. The detector of claim 10 , wherein:

X of the CMOS photocells are covered by the green filter layer, but no other colored filter layer, X being indicative of the percentage of CMOS photocells of the detector that are in the first sensor;

Y of the CMOS photocells are covered by both the green filter layer and the red filter layer, Y being indicative of the percentage of CMOS photocells of the detector that are in the first group of CMOS photocells of the second sensor;

Z of the CMOS photocells are covered by both the green filter layer and the black filter layer, Z being indicative of the percentage of CMOS photocells of the detector that are in the second group of CMOS photocells of the second sensor; and

X, Y and Z are selected such that the spectral response of the differential photocurrent is from about 400 nm to about 700 nm with a peak response at about 550 nm, which is substantially similar to a known spectral response of a human eye.

13. An ambient light detector, comprising:

a first sensor including complementary-metal-oxide semiconductor (CMOS) photocells that are covered by a colored filter layer of a first color that allows both visible and infrared (IR) light to pass; and

a second sensor including further CMOS photocells, which include both a first group of CMOS photocells and a second group of CMOS photocells,

wherein the first group of the CMOS photocells of the second sensor are covered by both a colored filter layer of the first color and a colored filter layer of a second color, stacked one above the other in either order, where the colored filter layer of the second color allows at least a first portion of IR light to pass, and

wherein the second group of the CMOS photocells of the second sensor are covered by both a colored filter layer of the first color and a colored filter layer of a third color, stacked one above the other in either order, where the colored filter layer of the third color allows at least a second portion of IR light to pass;

wherein the CMOS photocells of the first sensor are not covered by a colored filter layer of the second color;

wherein the CMOS photocells of the first sensor are not covered by a colored filter layer of the third color;

wherein the first group of the CMOS photocells of the second sensor are not covered by the colored filter layer of the third color;

wherein the second group of the CMOS photocells of the second sensor are not covered by the colored filter layer of the second color;

wherein the first sensor produces a first photocurrent, and the second sensor produces a second photocurrent, when light including both visible and IR light is incident upon the detector;

wherein a differential photocurrent, produced by determining a difference between the first and second photocurrents, has a spectral response with at least a significant part of the IR light cancelled;

wherein the first sensor includes X CMOS photocells that are covered by the filter layer of the first color, but no other colored filter layer;

wherein the second sensor includes

Y CMOS photocells that are covered by both the filter layer of the first color and the filter layer of the second color; and

Z CMOS photocells that are covered by both the filter layer of the first color and the filter layer of the third color; and

wherein X, Y and Z are selected such that the spectral response of the differential photocurrent is from about 400 nm to about 700 nm with a peak response at about 550 nm, which is substantially similar to a known spectral response of a human eye.

14. An ambient light detector, comprising:

a first sensor including complementary-metal-oxide semiconductor (CMOS) photocells that are covered by a colored filter layer of a first color that allows both visible and infrared (IR) light to pass; and

a second sensor including further CMOS photocells, which include both a first group of CMOS photocells and a second group of CMOS photocells,

wherein the first group of the CMOS photocells of the second sensor are covered by both a colored filter layer of the first color and a colored filter layer of a second color, stacked one above the other in either order, where the colored filter layer of the second color allows at least a first portion of IR light to pass, and

wherein the second group of the CMOS photocells of the second sensor are covered by both a colored filter layer of the first color and a colored filter layer of a third color, stacked one above the other in either order, where the colored filter layer of the third color allows at least a second portion of IR light to pass;

wherein the CMOS photocells of the first sensor are not covered by a colored filter layer of the second color;

wherein the CMOS photocells of the first sensor are not covered by a colored filter layer of the third color;

wherein the first group of the CMOS photocells of the second sensor are not covered by the colored filter layer of the third color;

wherein the second group of the CMOS photocells of the second sensor are not covered by the colored filter layer of the second color;

wherein the first sensor produces a first photocurrent, and the second sensor produces a second photocurrent, when light including both visible and IR light is incident upon the detector;

wherein a differential photocurrent, produced by determining a difference between the first and second photocurrents, has a spectral response with at least a significant part of the IR light cancelled;

wherein the filter layer of the first color has a first thickness;

wherein the filter layer of the second color has a second thickness;

the filter layer of the third color has a third thickness; and

wherein the first sensor includes X CMOS photocells that are covered by the filter layer of the first color, but no other colored filter layer;

wherein the second sensor includes

Y CMOS photocells that are covered by both the filter layer of the first color and the filter layer of the second color, and

Z CMOS photocells that are covered by both the filter layer of the first color and the filter layer of the third color; and

wherein the first, second and third thicknesses, and X, Y and Z, are selected such that the spectral response of the differential photocurrent is from about 400 nm to about 700 nm with a peak response at about 550 nm, which is substantially similar to a known spectral response of a human eye.