MEMS cavity-coating layers and methods
View Patent ↗Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the layer comprises a dielectric material. In some embodiments, the MEMS device also exhibits improved characteristics, such as improved electrical insulation between moving electrodes, reduced stiction, and/or improved mechanical properties.
1. A method for forming an optical interferometric modulator, the method comprising:
forming a cavity in an optical interferometric modulator, wherein
the cavity is defined by a primary dielectric layer and a second layer, and
the second layer is reflective and movable relative to the primary dielectric layer; and
forming a supplemental dielectric layer as part of an optical dielectric layer within the cavity by atomic layer deposition (ALD) after forming the cavity, wherein the supplemental dielectric layer has a thickness of at least about 10 Å over each of the primary dielectric layer and the second layer within the cavity, and wherein a total thickness of the optical dielectric layer depends upon the thicknesses of the supplemental dielectric layer and the primary dielectric layer.
2. The method of claim 1 , wherein forming the supplemental dielectric layer comprises forming at least part of an optical oxide layer.
3. The method of claim 2 , wherein forming the supplemental dielectric layer comprises forming at least one of Al 2 O 3 and SiO 2 .
4. The method of claim 2 , wherein forming the supplemental dielectric layer comprises forming a plurality of sub-layers.
5. The method of claim 2 , wherein forming the supplemental dielectric layer comprises forming at least part of the optical oxide layer at a temperature of less than about 350° C.
6. The method of claim 1 , wherein forming the supplemental dielectric layer by ALD comprises forming a first conformal layer of an optical oxide material within the cavity.
7. The method of claim 6 , wherein a thickness of the first conformal layer formed over a portion of the primary dielectric layer defining the cavity is substantially equal to a thickness of the first conformal layer formed over a portion of the second layer defining the cavity.
8. The method of claim 7 , wherein a thickness of the first conformal layer formed over a portion of the primary dielectric layer defining the cavity is from about 50 Å to about 400 Å.
9. The method of claim 1 , further comprising forming a layer of an optical dielectric material on a surface of the second layer after forming the cavity, wherein the surface of the second layer is outside of the cavity.
10. The method of claim 1 , wherein forming the supplemental dielectric layer by ALD comprises sealing at least one pinhole in the primary dielectric layer.
11. The method of claim 1 , wherein a total thickness of the optical dielectric layer, which includes the supplemental dielectric layer and the primary dielectric layer, is less than about 100 nm.
12. The method of claim 1 , wherein forming the supplemental dielectric layer by ALD comprises forming at least part of an optical oxide layer over a manufacturing residue disposed on the primary dielectric layer.
13. The method of claim 1 , further comprising packaging the interferometric modulator before forming the supplemental dielectric layer by a method comprising:
forming a seal circumscribing the interferometric modulator, wherein the seal comprises at least one opening; and
securing a backplate to the seal, thereby packaging the optical interferometric modulator.
14. The method of claim 13 , further comprising filling the at least one opening in the seal after forming the supplemental dielectric layer.
15. An optical interferometric modulator formed by the method of claim 1 .
16. The method of claim 1 , wherein the optical interferometric modulator is an element of an array of microelectromechanical systems devices.
17. The method of claim 16 , further comprising forming a plurality of openings in the second layer.
18. A microelectromechanical systems device manufactured by the method of claim 16 .