Tuning fork vibration device and method for manufacturing the same

1. A tuning fork vibration device comprising:

a SOI substrate having a substrate, an oxide layer formed above the substrate, and a semiconductor layer formed above the oxide layer;

a tuning fork type vibration section that is formed by processing the semiconductor layer and the oxide layer and is composed of the semiconductor layer; and

a driving section for generating flexural vibration of the tuning fork type vibration section;

wherein the tuning fork type vibration section includes a support section and two beam sections cantilevered over a first opening section formed in the oxide layer, wherein the first opening section is formed below the entirety of the support section and the beam sections, wherein the support section and the beam sections are formed in a cantilever shape with the support section as a base of the beam sections, and wherein the driving section includes a pair of drivers formed only on each of the two beam sections, each of the drivers including a first electrode layer, a piezoelectric thin film of lead zirconate titantate or a solid solution of lead zirconate titantate formed above the first electrode layer, and a second electrode layer formed above the piezoelectric thin film, and

wherein a first driver disposed on an outer side of one of the two beam sections and a third driver disposed on an outer side of the other of the two beam sections are electrically connected to each other, and a second driver disposed on an inner side of the one of the two beam sections and a fourth driver disposed on an inner side of the other of the two beam sections are electrically connected to each other.

2. The tuning fork vibration device according to claim 1 , wherein a thickness of the tuning fork type vibration section is 20 μm or less.

3. The tuning fork vibration device according to claim 1 , wherein a length of the tuning fork type vibration section is 2 mm or less.

4. The tuning fork vibration device according to claim 1 , wherein a resonance frequency of the tuning fork type vibration section is between 16 kHz and 66 kHz.

5. The tuning fork vibration device according to claim 4 , wherein the resonance frequency of the vibration section is 32 kHz.

6. The tuning fork vibration device according to claim 1 , wherein the support section extends from a frame section that surrounds the tuning fork type vibration section into a second opening section formed in the semiconductor layer between the tuning fork type vibration section and the frame section and above the first opening section and wherein, the frame section is composed of the semiconductor layer.

7. The tuning fork vibration device according to claim 6 , wherein the support section includes a first support section that extends from the frame section in a first direction and a second support section that extends from the first support section in the first direction wherein, the second support section is wider than the first support section in a second direction perpendicular to the first direction and wherein, the second support section is being the base of the beam sections.

8. The tuning fork vibration device according to claim 7 , wherein the second support section includes side sections facing in opposite directions perpendicular to the first direction, the side sections formed in a concave-convex shape.

9. The tuning fork vibration device according to claim 1 , wherein a thickness of the piezoelectric thin film is greater than or equal to 100 nm and less than or equal to 2 μm.