Semiconductor device
View Patent ↗A semiconductor device includes a substrate, a first gate electrode, a second gate electrode, a first channel region positioned between the substrate and the first gate electrode, a second channel region positioned between the substrate and the second gate electrode, a gate insulation film positioned at least between the first channel region and the first gate electrode, and between the second channel region and the second gate electrode, a first conducting section, a second conducting section, and a third conducting section each positioned between the substrate and the gate insulation film, and an intermediate electrode electrically connected to the second gate electrode, and overlapping a part of the first gate electrode, wherein the first channel region is positioned between the first conducting section and the second conducting section, and the second channel region is positioned between the second conducting section and the third conducting section.
1. A semiconductor device, comprising:
a substrate;
a first gate electrode;
a second gate electrode;
a first channel region positioned between the substrate and the first gate electrode;
a second channel region positioned between the substrate and the second gate electrode;
a gate insulation film positioned at least between the first channel region and the first gate electrode, and between the second channel region and the second gate electrode;
a first conducting section positioned between the substrate and the gate insulation film;
a second conducting section positioned between the substrate and the gate insulation film, the first channel region being positioned between the first conducting section and the second conducting section;
a third conducting section positioned between the substrate and the gate insulation film, the second channel region being positioned between the second conducting section and the third conducting section; and
an intermediate electrode electrically connected to the second gate electrode, and overlapping a part of the first gate electrode,
wherein:
the first gate electrode forms a capacitor with the intermediate electrode; and
the second gate electrode is electrically connected with the first gate electrode via the capacitor.
2. The semiconductor device according to claim 1 , the shortest distance between the first conducting section and the second conducting section being greater than the shortest distance between the second conducting section and the third conducting section.
3. The semiconductor device according to claim 1 , further comprising:
an interlayer insulation film positioned at least between the first gate electrode and the intermediate electrode, and between the second gate electrode and the intermediate electrode, the second gate electrode and the intermediate electrode being electrically connected to each other via a contact plug provided to the interlayer insulation film, and the first gate electrode and the intermediate electrode forming the capacitor with the interlayer insulation film.
4. The semiconductor device according to claim 1 , the second gate electrode and the intermediate electrode being electrically connected to each other via a contact plug provided to the gate insulation film, and the first gate electrode and the intermediate electrode forming the capacitor with the gate insulation film.
5. The semiconductor device according to claim 1 , each of the first channel region and the second channel region including an inorganic semiconductor material, and each of the first conducting section, the second conducting section, and the third conducting section including an impurity and the inorganic semiconductor material.
6. The semiconductor device according to claim 1 , each of the first channel region and the second channel region including an organic semiconductor material, and each of the first conducting section, the second conducting section, and the third conducting section including a conductive organic material.
7. The semiconductor device according to claim 1 , each of the first channel region and the second channel region including an organic semiconductor material, and each of the first conducting section, the second conducting section, and the third conducting section including a metal.
8. A semiconductor device, comprising:
a substrate;
a first gate electrode;
a second gate electrode;
a first channel region positioned between the substrate and the first gate electrode;
a second channel region positioned between the substrate and the second gate electrode;
a gate insulation film positioned at least between the first channel region and the first gate electrode, and between the second channel region and the second gate electrode;
a first conducting section positioned between the substrate and the gate insulation film;
a second conducting section positioned between the substrate and the gate insulation film, the first channel region being positioned between the first conducting section and the second conducting section;
a third conducting section positioned between the substrate and the gate insulation film, the second channel region being positioned between the second conducting section and the third conducting section; and
an intermediate electrode overlapping a part of the first gate electrode and a part of the second gate electrode,
wherein:
the first gate electrode forms a first capacitor with the intermediate electrode;
the second gate electrode forms a second capacitor with the intermediate electrode; and
the second gate electrode is electrically connected with the first gate electrode via both the first capacitor and the second capacitor.
9. The semiconductor device according to claim 8 , the shortest distance between the first conducting section and the second conducting section being greater than the shortest distance between the second conducting section and the third conducting section.
10. The semiconductor device according to claim 8 , further comprising:
an interlayer insulation film positioned at least between the first gate electrode and the intermediate electrode, and between the second gate electrode and the intermediate electrode, a part of the first gate electrode and the intermediate electrode forming the first capacitor with the interlayer insulation film, and a part of the second gate electrode and the intermediate electrode forming the second capacitor with the interlayer insulation film.
11. The semiconductor device according to claim 8 , a part of the first gate electrode and the intermediate electrode forming the first capacitor with the gate insulation film, and a part of the second gate electrode and the intermediate electrode forming the second capacitor with the gate insulation film.
12. The semiconductor device according to claim 8 , each of the first channel region and the second channel region including an inorganic semiconductor material, and each of the first conducting section, the second conducting section, the third conducting section, and the intermediate electrode including an impurity and the inorganic semiconductor material.
13. The semiconductor device according to claim 8 , each of the first channel region and the second channel region including an organic semiconductor material, and each of the first conducting section, the second conducting section, the third conducting section, and the intermediate electrode including a conductive organic material.
14. The semiconductor device according to claim 8 , each of the first channel region and the second channel region including an organic semiconductor material, and each of the first conducting section, the second conducting section, the third conducting section, and the intermediate electrode including a metal.