Granted Patent B2

US 7,754,510 · App. 11/695,131 · Granted Jul 13, 2010

Abstract

Claims (31)

1. A process for fabricating an electronic device comprising:

depositing a layer comprising a semiconductor;

liquid depositing a dielectric composition comprising a lower-k dielectric polymer, a higher-k dielectric polymer, and a liquid, wherein the lower-k dielectric polymer and the higher-k dielectric polymer are not phase separated prior to the liquid depositing; and

causing phase separation of the lower-k dielectric polymer and the higher-k dielectric polymer to form a phase-separated dielectric structure wherein the lower-k dielectric polymer is in a higher concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the layer comprising the semiconductor wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.

2. The process of claim 1 , wherein the liquid depositing is accomplished in a single step.

3. The process of claim 1 , wherein the phase separation is caused by thermal annealing.

4. The process of claim 1 , wherein the lower-k dielectric polymer is at a concentration ranging from about 60% to 100% and the higher-k dielectric polymer is at a concentration ranging from about 40% to 0% of the total weight of the lower-k and the higher-k dielectric polymers in the region of the dielectric structure closest to the layer comprising the semiconductor.

5. The process of claim 1 , wherein the lower-k dielectric polymer is at a concentration ranging from about 80% to 100% and the higher-k dielectric polymer is at a concentration ranging from about 20% to 0% of the total weight of the lower-k and the higher-k dielectric polymers in the region of the dielectric structure closest to the layer comprising the semiconductor.

6. The process of claim 1 , wherein the lower-k dielectric polymer has a dielectric constant of less than 4.0.

7. The process of claim 1 , wherein the higher-k dielectric polymer has a dielectric constant of 4.0 or more.

8. The process of claim 1 , wherein the dielectric composition is non-photoimageable.

9. A process for fabricating an electronic device comprising:

depositing a layer comprising a semiconductor;

liquid depositing in a single step a dielectric composition comprising a lower-k dielectric polymer, a higher-k dielectric polymer, and a liquid, wherein the lower-k dielectric polymer and the higher-k dielectric polymer are not phase separated prior to the liquid depositing; and

causing phase separation of the lower-k dielectric polymer and the higher-k dielectric polymer to form a phase-separated dielectric structure wherein the lower-k dielectric polymer is at a concentration ranging from about 60% to 100% and the higher-k dielectric polymer is at a concentration ranging from about 40% to 0% of the total weight of the lower-k and the higher-k dielectric polymers in a region of the dielectric structure closest to the layer comprising the semiconductor

wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.

10. The process of claim 9 , wherein the phase separation is caused by thermal annealing.

11. The process of claim 9 , wherein the lower-k dielectric polymer is at a concentration ranging from about 80% to 100% and the higher-k dielectric polymer is at a concentration ranging from about 20% to 0% of the total weight of the lower-k and the higher-k dielectric polymers in the region of the dielectric structure closest to the layer comprising the semiconductor.

12. The process of claim 9 , wherein the lower-k dielectric polymer has a dielectric constant of less than 4.0.

13. The process of claim 9 , wherein the higher-k dielectric polymer has a dielectric constant of 4.0 or more.

14. A process for fabricating a thin film transistor comprising:

depositing a layer comprising a semiconductor;

liquid depositing a dielectric composition comprising a lower-k dielectric polymer, a higher-k dielectric polymer, and a liquid, wherein the lower-k dielectric polymer and the higher-k dielectric polymer are dissolved in the liquid; and

causing phase separation of the lower-k dielectric polymer and the higher-k dielectric polymer to form a phase-separated gate dielectric comprising a lower-k dielectric polymer-majority/higher-k dielectric polymer-minority first phase and a higher-k dielectric polymer-majority/lower-k dielectric polymer-minority second phase, wherein the lower-k dielectric polymer is in a higher concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the layer comprising the semiconductor

wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation;

wherein the lower-k dielectric polymer has a dielectric constant of less than 4.0; and

wherein the higher-k dielectric polymer has a dielectric constant of 4.0 or more.

15. The process of claim 14 , wherein the lower-k dielectric polymer is at a concentration ranging from about 60% to 100% and the higher-k dielectric polymer is at a concentration ranging from about 40% to 0% of the total weight of the lower-k and the higher-k dielectric polymers in the region of the dielectric structure closest to the layer comprising the semiconductor.

16. The process of claim 14 , wherein the lower-k dielectric polymer is at a concentration ranging from about 80% to 100% and the higher-k dielectric polymer is at a concentration ranging from about 20% to 0% of the total weight of the lower-k and the higher-k dielectric polymers in the region of the dielectric structure closest to the layer comprising the semiconductor.

17. The process of claim 14 , wherein the lower-k dielectric polymer has a dielectric constant of less than about 3.5.

18. The process of claim 14 , wherein the lower-k dielectric polymer comprises a polysilsesquioxane.

Assignments (10)