Device with phase-separated dielectric structure
View Patent ↗An electronic device including in any sequence: (a) a semiconductor layer; and (b) a phase-separated dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a higher concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the semiconductor layer.
1. An electronic device comprising in any sequence:
(a) a semiconductor layer; and
(b) a single, phase separated dielectric layer comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a higher concentration than the higher-k dielectric polymer in a region of the dielectric layer closest to the semiconductor layer;
wherein the phase separated dielectric layer comprises a morphology of:
(i) a first phase forming a plurality of dots in a continuous matrix of a second phase;
(ii) a first phase forming a plurality of rods in a continuous matrix of a second phase; or
(iii) a first phase interpenetrating into a second phase to form bicontinuous domains.
2. The electronic device of claim 1 , wherein the lower-k dielectric polymer is at a concentration ranging from about 60% to 100% and the higher-k dielectric polymer is at a concentration ranging from about 40% to 0% of the total weight of the lower-k and the higher-k dielectric polymers in the region of the dielectric layer closest to the semiconductor layer.
3. The electronic device of claim 1 , wherein the lower-k dielectric polymer is at a concentration ranging from about 80% to 100% and the higher-k dielectric polymer is at a concentration ranging from about 20% to 0% of the total weight of the lower-k and the higher-k dielectric polymers in the region of the dielectric layer closest to the semiconductor layer.
4. The electronic device of claim 1 , wherein the lower-k dielectric polymer has a dielectric constant of less than 4.0.
5. The electronic device of claim 1 , wherein the higher-k dielectric polymer has a dielectric constant of 4.0 or more.
6. An electronic device comprising in any sequence:
(a) an organic semiconductor layer; and
(b) a single, phase separated dielectric layer comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is at a concentration ranging from about 60% to 100% and the higher-k dielectric polymer is at a concentration ranging from about 40% to 0% of the total weight of the lower-k and the higher-k dielectric polymers in a region of the dielectric layer closest to the semiconductor layer,
wherein the phase separated dielectric layer comprises a morphology of;
(i) a first phase forming a plurality of dots in a continuous matrix of a second phase;
(ii) a first phase forming a plurality of rods in a continuous matrix of a second phase; or
(iii) a first phase interpenetrating into a second phase to form bicontinuous domains.
7. The electronic device of claim 6 , wherein the lower-k dielectric polymer is at a concentration ranging from about 80% to 100% and the higher-k dielectric polymer is at a concentration ranging from about 20% to 0% of the total weight of the lower-k and the higher-k dielectric polymers in the region of the dielectric layer closest to the semiconductor layer.
8. The electronic device of claim 6 , wherein the lower-k dielectric polymer has a dielectric constant of less than 4.0.
9. The electronic device of claim 6 , wherein the higher-k dielectric polymer has a dielectric constant of 4.0 or more.
10. A thin film transistor comprising in any sequence:
(a) a semiconductor layer; and
(b) a single, phase separated gate dielectric layer comprising a lower-k dielectric polymer-majority/higher-k dielectric polymer-minority first phase and a higher-k dielectric polymer-majority/lower-k dielectric polymer-minority second phase, wherein the lower-k dielectric polymer is in a higher concentration than the higher-k dielectric polymer in a region of the dielectric layer closest to the semiconductor layer;
wherein the phase separated dielectric layer comprises a morphology of:
(i) a first phase forming a plurality of dots in a continuous matrix of a second phase;
(ii) a first phase forming a plurality of rods in a continuous matrix of a second phase; or
(iii) a first phase interpenetrating into a second phase to form bicontinuous domains.
11. The thin film transistor of claim 10 , wherein the lower-k dielectric polymer is at a concentration ranging from about 60% to 100% and the higher-k dielectric polymer is at a concentration ranging from about 40% to 0% of the total weight of the lower-k and the higher-k dielectric polymers in the region of the dielectric layer closest to the semiconductor layer.
12. The electronic device of claim 10 , wherein the lower-k dielectric polymer is at a concentration ranging from about 80% to 100% and the higher-k dielectric polymer is at a concentration ranging from about 20% to 0% of the total weight of the lower-k and the higher-k dielectric polymers in the region of the dielectric layer closest to the semiconductor layer.
13. The thin film transistor of claim 10 , wherein the lower-k dielectric polymer has a dielectric constant of less than 4.0.
14. The thin film transistor of claim 10 , wherein the higher-k dielectric polymer has a dielectric constant of 4.0 or more.
15. The thin film transistor of claim 10 , wherein the lower-k dielectric polymer and the higher-k dielectric polymer are crosslinked.
16. A thin film transistor comprising in any sequence:
(a) a semiconductor layer; and
(b) a single, phase separated gate dielectric layer comprising a polymer blend of a lower-k dielectric polymer and a higher-k dielectric polymer;
wherein the lower-k dielectric polymer is a polysilsesquioxane;
wherein the higher-k dielectric polymer is poly(2-hydroxylethyl methacrylate); and
wherein the phase separated dielectric layer comprises a morphology of:
(i) a first phase forming a plurality of dots in a continuous matrix of a second phase;
(ii) a first phase forming a plurality of rods in a continuous matrix of a second phase; or
(iii) a first phase interpenetrating into a second phase to form bicontinuous domains.
17. The thin film transistor of claim 16 , wherein the lower-k dielectric polymer is poly(methyl silsesquioxane).
18. The thin film transistor of claim 16 , wherein the polymer blend further comprises inorganic nanoparticles.
19. The thin film transistor of claim 16 , wherein the higher-k dielectric polymer is crosslinked.