Exposure device and image forming apparatus using the same
View Patent ↗To provide an exposure device and an image forming apparatus using the same, in which the exposure device can detect light intensity with improved reliability and thereby controls the light intensity with high precision, the exposure device includes an EL (electro-luminescence) element having a first electrode (an anode), a second electrode (a cathode), and a light emitting layer disposed between the first and second electrodes, thereby forming a light emitting unit, and a light detecting element detecting light emitted from the EL element, in which the EL element and the light detecting element are stacked onto each other. The light detecting element is provided at an inner side of a principal surface of the electrode (the anode) which is disposed closer to the light detecting element than the other electrode. A light emitting area of the EL element is provided at an inner side of a principal surface of the light detecting element.
1. An exposure device comprising:
an EL (electro-luminescence) element having a first electrode, a second electrode, and a light emitting layer disposed between the first and second electrodes, thereby forming a light emitting unit; and
a light detecting element detecting light emitted from the EL element, the EL element and the light detecting element being stacked onto each other,
wherein the light detecting element is provided at an inner side of a principal surface of the electrode which is disposed closer to the light detecting element than the other electrode, and
wherein a light emitting area of the EL element is provided at an inner side of a principal surface of the light detecting element.
2. The exposure device according to claim 1 , wherein the EL element is stacked on an upper layer of the light detecting element formed on a substrate,
wherein the light detecting element includes a photoelectric conversion unit, and
wherein an outer periphery of the photoelectric conversion unit is disposed at an inner side of the principal surface of the first electrode of the EL element.
3. The exposure device according to claim 2 , wherein the light detecting element is formed on a semiconductor island area formed on the substrate, and
wherein an light exiting area of the EL element is formed on the semiconductor island area.
4. The exposure device according to claim 1 , further comprising:
an insulating substrate;
a light detecting element formed on the insulating substrate; and
an EL element stacked on the light detecting element through an insulating film.
5. The exposure device according to claim 4 , wherein the insulating substrate is a glass substrate having a light transmitting property,
wherein the light detecting element is a thin-film transistor having, as an active region, a semiconductor layer formed on the glass substrate having the light transmitting property,
wherein the EL element includes:
a first electrode made of a conductive film having a light transmitting property and formed on the semiconductor layer via an insulating film covering the semiconductor layer;
a light emitting layer formed on the first electrode; and
a second electrode formed on the light emitting layer, and
wherein an electric field is applied between the first electrode and the second electrode, thereby allowing the light emitting layer to emit light therefrom.
6. The exposure device according to claim 4 ,
wherein the insulating substrate is a substrate having a reflective surface thereon,
wherein the light detecting element is a thin-film transistor having, an active region, a semiconductor layer formed on the substrate,
wherein the EL element includes:
a first electrode made of a conductive film having a light transmitting property and formed on the semiconductor layer via an insulating film covering the semiconductor layer;
a light emitting layer formed on the first electrode; and
a second electrode having a light transmitting property formed on the light emitting layer, and
wherein an electric field is applied between the first electrode and the second electrode, thereby allowing the light emitting layer to emit light therefrom.
7. The exposure device according to claim 5 ,
wherein the thin-film transistor is a field-effect transistor in which the first electrode of the EL element serves as a gate electrode and the insulating film serves as a gate insulating film, and
wherein the thickness of the gate insulating film is determined such that irregularity in the electric potential of the first electrode is absorbed by a voltage drop caused by the gate insulating film.
8. The exposure device according to claim 5 , wherein the semiconductor layer of the thin-film transistor is configured such that source/drain regions defined in an impurity-doped region doped with a predetermined concentration are separated from each other by a channel region defined in a non-doped region and the channel region faces the first electrode.
9. The exposure device according to claim 5 ,
wherein the thickness of the insulating film on the channel region is adjusted such that the electric field of the first electrode formed on the channel region via the insulating film is changed to a desired value by a voltage drop caused by the insulating film.
10. The exposure device according to claim 5 ,
wherein the width of the first electrode of the EL element is substantially equal to that of the channel region.
11. The exposure device according to claim 1 , wherein an opening formed on the insulating film disposed between the first or second electrode and the light emitting layer is defined as a light exiting area of the EL element.
12. The exposure device according to claim 1 , wherein an optical light blocking film is defined as a light exiting area of the EL element.
13. The exposure device according to claim 1 , wherein the light detecting element is configured with an island-shaped poly-crystalline silicon, and the area of the island-shaped portion is greater than that of the light emitting area of the EL element.
14. The exposure device according to claim 1 , wherein the light detecting element is configured with an island-shaped amorphous silicon, and the area of the island-shaped portion is greater than that of the light emitting area of the EL element.
15. The exposure device according to claim 1 , wherein the light detecting element is provided to the light exiting area of the EL element on a one-to-one basis.
16. The exposure device according to claim 1 , wherein the EL element is an organic EL element in which an organic semiconductor layer is used as the light emitting layer.
17. The exposure device according to claim 1 , wherein the EL element is an inorganic EL element in which an inorganic semiconductor layer is used as the light emitting layer.
18. The exposure device according to claim 1 , wherein the exposure device further comprises a light intensity correcting unit that corrects the intensity or lighting period of light emitted from the EL element on the basis of an output from the light detecting element.
19. The exposure device according to claim 1 , wherein the light detecting element is configured with the same semiconductor layer as the thin-film transistor constituting a driving circuit of the EL element.
20. An image forming apparatus in which the exposure device according to claim 1 is used as an exposure unit for image formation.
21. An image forming apparatus in which the exposure device according to claim 7 is used as an exposure unit for image formation.
22. An image forming apparatus in which the exposure device according to claim 8 is used as an exposure unit for image formation.
23. An image forming apparatus in which the exposure device according to claim 9 is used as an exposure unit for image formation.
24. An image forming apparatus in which the exposure device according to claim 10 is used as an exposure unit for image formation.