Surface illuminated photodiode and optical receiver module
View Patent ↗In a mesa type PIN-PD formed using a heavily doped semiconductor material, a high frequency response is degraded as slow carriers occur in a heavily doped layer when light incident into a light receiving section transmits through an absorbing layer and reaches the heavily doped layer on a side near the substrate. In a p-i-n multilayer structure, a portion corresponding to a light receiving section of a heavily doped layer on a side near a substrate is previously made thinner than the periphery of the light receiving section by an etching or selective growth technique, over which an absorbing layer and another heavily doped layer are grown to form the light receiving section of mesa structure. This makes it possible to form a good ohmic contact and to realize a PIN-PD with excellent high frequency response characteristics.
1. A surface illuminated photodiode having a p-i-n multilayer structure including an n-type heavily doped layer, an absorbing layer, and a p-type heavily doped layer, over a semiconductor substrate in the order from the semiconductor substrate,
wherein said n-type heavily doped layer has a first film thickness in a light receiving section, said n-type heavily doped layer has a second film thickness in an electrode portion in the vicinity of said light receiving section, and said first film thickness is thinner than said second film thickness, and
wherein an energy band gap difference between said n-type heavily doped layer of said light receiving section and said absorbing layer is within 0.2 eV.
2. A surface illuminated photodiode having a p-i-n multilayer structure including an n-type heavily doped layer, an absorbing layer, and a n-type heavily doped layer, over a semiconductor substrate in the order from the semiconductor substrate,
wherein said n-type heavily doped layer has a first film thickness in a light receiving section, said n-type heavily doped layer has a second film thickness in an electrode portion in the vicinity of said light receiving section, and said first film thickness is thinner than said second film thickness,
wherein said n-type heavily doped layer mainly includes InGaAs, InGaAsP, InGaAlAs, GaInNAs, or GaInNAsSb, and
wherein an energy band gap difference between said n-type heavily doped layer of said light receiving section and said absorbing layer is within 0.2 eV.
3. A surface illuminated photodiode having a p-i-n multilayer structure including an n-type heavily doped layer, an absorbing layer, and a p-type heavily doped layer, over a semiconductor substrate in the order from the semiconductor substrate,
wherein said n-type heavily doped layer has a first film thickness in a light receiving section, said n-type heavily doped layer has a second film thickness in an electrode portion in the vicinity of said light receiving section, and said first film thickness is thinner than said second film thickness,
wherein said first film thickness of said n-type heavily doped layer of said light receiving section is from 0.1 μm to 0.4 μm,
said second film thickness of said n-type heavily doped layer of said electrode portion in the vicinity of said light receiving section is thicker than said first film thickness by 0.1 μm or more, and
wherein an energy band gap difference between said n-type heavily doped layer of said light receiving section and said absorbing layer is within 0.2 eV.