Resist material and pattern formation method using the same
A resist material includes a polymeric material made of a unit represented by a general formula of the following Chemical Formula; and an acid generator for generating an acid through irradiation with light: wherein R 1 , R 2 and R 3 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; m≧0, n≧0, s>0 (whereas excluding m=n=0) and 1≦k≦3.
1. A resist material comprising:
a polymeric material made of a unit represented by a general formula of the following Chemical Formula 1; and
an acid generator for generating an acid through irradiation with light:
wherein R 1 , R 2 and R 3 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; m≧0, n≧0, s>0 (whereas excluding m=n=0) and 1≦k≦3.
2. The resist material of claim 1 , further comprising a dissolution inhibitor for inhibiting dissolution of said polymeric material.
3. A pattern formation method comprising the steps of:
forming, on a substrate, a resist film made of a resist material including a polymeric material made of a unit represented by a general formula of the following Chemical Formula 2 and an acid generator for generating an acid through irradiation with light;
performing pattern exposure by selectively irradiating said resist film with exposing light of a high energy beam of a wavelength not shorter than a 100 nm band and not longer than a 300 nm band or a wavelength not shorter than a 1 nm band and not longer than a 30 nm band or an electron beam; and
forming a resist pattern by developing said resist film after the pattern exposure:
wherein R 1 , R 2 and R 3 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; m≧0, n≧0, s>0 (whereas excluding m=n=0) and 1≦k≦3.
4. The pattern formation method of claim 3 ,
wherein said high energy beam of said exposing light is KrF excimer laser, ArF excimer laser, F 2 laser, Kr 2 laser, KrAr laser, Ar 2 laser or a soft X-ray beam.
5. The pattern formation method of claim 3 ,
wherein said resist material further includes a dissolution inhibitor for inhibiting dissolution of said polymeric material.
6. A pattern formation method comprising the steps of:
forming, on a substrate, a resist film made of a resist material including a polymeric material made of a unit represented by a general formula of the following Chemical Formula 3 and an acid generator for generating an acid through irradiation with light;
providing a liquid onto said resist film;
performing, with said liquid provided on said resist film, pattern exposure by selectively irradiating said resist film with exposing light of a high energy beam of a wavelength not shorter than a 100 nm band and not longer than a 300 nm band; and
forming a resist pattern by developing said resist film after the pattern exposure:
wherein R 1 , R 2 and R 3 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; m≧0, n≧0, s>0 (whereas excluding m=n=0) and 1≦k≦3.
7. The pattern formation method of claim 6 ,
wherein said resist material further includes a dissolution inhibitor for inhibiting dissolution of said polymeric material.
8. The pattern formation method of claim 6 ,
wherein said liquid is water.
9. The pattern formation method of claim 8 ,
wherein said high energy beam of said exposing light is KrF excimer laser or ArF excimer laser.
10. The pattern formation method of claim 6 ,
wherein said liquid is perfluoropolyether.
11. The pattern formation method of claim 10 ,
wherein said high energy beam of said exposing light is F 2 laser, Kr 2 laser, KrAr laser or Ar 2 laser.