Apparatus and method for supplying chemicals
A chemical supplying apparatus includes first and second mixing tanks for mixing and supplying chemical slurries used in a semiconductor fabrication process. The slurries are alternately provided from the first and second mixing tanks such that the slurry is continuously available to a processing apparatus for maximum efficiency. While one of the tanks is supplying the slurry, the other tank is cleaned and then used to prepare a new batch of the slurry.
1. A method of producing a semiconductor device comprising:
providing a first tank and a second tank for preparing a slurry to be used alternately from the tanks;
preparing a first batch of the slurry in the first tank;
polishing wafers with the slurry of the first batch in a CMP processing unit;
delaying starting preparation of a second batch of the slurry in the second tank until a signal is received from the first tank indicating liquid level of the slurry in the first tank has dropped to a first preparation start value during a period of time when the slurry in the first tank is used for polishing the wafers, and then preparing a second batch of the slurry in the second tank; and
beginning polishing additional wafers with the slurry of the second batch in the CMP processing unit when signal is received from the first tank indicating the liquid level of the slurry in the first tank has dropped to a second low level value.
2. The method according to claim 1 , further comprising:
starting preparation of a third batch of the slurry in the first tank when a signal is received from the second tank indicating liquid level of the slurry in the second tank has dropped to a third preparation start value; and
beginning polishing further additional wafers with the slurry of the third batch in the CMP processing unit when a signal is received from the second tank indicating the liquid level of the slurry in the second tank has dropped to a fourth low level value.
3. The method according to claim 1 , wherein each of the first and second tanks is configured to store the slurry necessary for polishing a predetermined number of wafers in the CMP processing unit.
4. The method according to claim 3 , wherein the predetermined number of wafers is one lot of wafers.
5. The method according to claim 1 , further comprising:
cleaning at least one of the first tank and the second tank before preparing the slurry.
6. The method according to claim 1 , further comprising:
supplying an inert gas to at least one of the first tank and the second tank when the amount of the slurry is reduced.
7. The method according to claim 1 , wherein the slurry is generated by mixing a plurality of stock chemicals.
8. The method according to claim 1 wherein the slurry is generated by diluting at least one stock chemical with water.
9. The method according to claim 1 , wherein the slurry is generated by mixing a stock chemical and an abrasive grain.
10. The method according to claim 1 , wherein the first preparation start value corresponds to a level at which the amount of slurry in the first tank is substantially equal to the amount of slurry used up in the first tank during the time necessary for preparing the second batch of die slurry in the second tank, and the second low level value corresponds to the first tank being substantially empty.
11. The method according to claim 2 , wherein the third preparation start value corresponds to a level at which the amount of slurry in the second tank is substantially equal to the amount of slurry used up in the second tank during the time necessary for preparing the third batch of the slurry in the first tank, and the fourth low level value corresponds to the second tank being substantially empty.
12. A method for producing a semiconductor device comprising:
providing a first tank and a second tank for preparing a slurry to be used alternately from the tanks;
preparing a first batch of the slurry in the first tank;
polishing wafers with the slurry of the first batch in at least one of a plurality of CMP processing units;
delaying starting preparation of a second batch of the slurry in the second tank until a signal is received from the first tank indicating liquid level of the slurry in the first tank has dropped to a first preparation start value during a period of time when the slurry in the first tank is used for polishing the wafers, and then preparing a second batch of the slurry in the second tank; and
beginning polishing additional wafers with the slurry of the second batch in at least one of the plurality of CMP processing units when a signal is received from the first tank indicating the liquid level of the slurry in the first tank has dropped to a second low level value.
13. The method according to claim 12 , further comprising:
starting preparation of a third batch of the slurry in the first tank when a liquid level of the slurry in the second tank reaches a third preparation start value; and
beginning polishing further additional wafers with the slurry of the third batch in at least one of the plurality of CMP processing units when a signal is received from the second tank indicating the liquid level of the slurry in the second tank has dropped to a fourth low level value.
14. The method according to claim 12 , wherein the first preparation start value corresponds to a level at which the amount of slurry in the first tank is substantially equal to the amount of slurry used up in the first tank during the time necessary for preparing the second batch of the slurry in the second tank, and the second low level value corresponds to the first tank being substantially empty.
15. The method according to claim 13 , wherein the third preparation start value corresponds to a level at which the amount of slurry in the second tank is substantially equal to the amount of slurry used up in the second tank during the time necessary for preparing the third batch of the slurry in the first tank, and the fourth low level value corresponds to the second tank being substantially empty.
16. A method of producing a semiconductor device comprising:
providing a first and a second tank for preparing a slurry to be used alternately from the tanks;
preparing a first batch of the slurry in the first tank;
supplying the slurry of the first batch to a CMP processing unit to polishing at least one of a plurality of wafers;
delaying starting preparation of a second batch of the slurry in the second tank until a signal is received from the first tank indicating liquid level of the slurry in the first tank has dropped to a first preparation start value during a period of time when the slurry in the first tank is used for polishing the wafers, and then preparing a second batch of the slurry in the second tank; and
beginning supplying the slurry of the second batch to the CMP processing unit to polish at least another one of the plurality of wafers when a signal is received from the first tank indicating the liquid level of the slurry in the first tank has dropped to a second low level value.
17. The method according to claim 16 , further comprising:
starting preparation of a third batch of the slurry in the first tank when the liquid level of the slurry in the second tank reaches a third preparation start value; and
beginning supplying the slurry of the third batch to the CMP processing units to polish at least still another one of the plurality of wafers when a signal is received from the second tank indicating the liquid level of the slurry in the second tank has dropped to a fourth low level value.
18. The method according to claim 16 , wherein the plurality of wafers are included in one lot of wafers.
19. The method according to claim 16 , wherein the slurry is generated by mixing a plurality of stock chemicals.
20. The method according to claim 16 , wherein the slurry is generated by diluting at least one stock chemical with water.
21. The method according to claim 16 , wherein the first preparation start value corresponds to a level at which the amount of slurry in the first tank is substantially equal to the amount of slurry used up in the first tank during the time necessary for preparing the second batch of the slurry in the second tank, and the second low level value corresponds to the first tank being substantially empty.
22. The method according to claim 17 , wherein the third preparation start value corresponds to a level at which the amount of slurry in the second tank is substantially equal to the amount of slurry used up in the second tank during the time necessary for preparing the third batch of the slurry in the first tank, and the fourth low level value corresponds to the second tank being, substantially empty.