Method of manufacturing semiconductor device having resistor formed of a polycrystalline silicon film

1. A method of manufacturing a semiconductor device including a resistor, comprising the steps of:

forming a first oxide film in a convex shape on a field insulating film;

forming a polycrystalline silicon film on the first oxide film;

introducing an impurity into the polycrystalline silicon film;

patterning the polycrystalline silicon film into which the impurity is introduced so that a portion above the convex-shaped first oxide film becomes a resistance region of the resistor;

forming a second oxide film on the patterned polycrystalline silicon film;

forming a third oxide film on the second oxide film; and

removing the third oxide film and parts of the second oxide film and the polycrystalline silicon film to form a planarized surface including surface portions of the second oxide film and the polycrystalline silicon film.

2. A method of manufacturing a semiconductor device according to claim 1 ; wherein the polycrystalline silicon film comprises a second polycrystalline silicon film; and wherein the step of forming the first oxide film comprises the steps of forming a first polycrystalline silicon film on the field insulating film, patterning the first polycrystalline silicon film to leave a portion of the first polycrystalline silicon film below a region of the resistor so that the portion of the first polycrystalline silicon film becomes a high resistance, and forming the first oxide film on the field insulating film and on the first polycrystalline silicon film, the resistor being formed of the first polycrystalline silicon film.

3. A method of manufacturing a semiconductor device according to claim 2 ; wherein the step of forming the first polycrystalline silicon film comprises forming the first polycrystalline silicon film with a film thickness in a range of 300 nm to 400 nm.

4. A method of manufacturing a semiconductor device according to claim 1 ; wherein the step of forming the polycrystalline silicon film comprises forming the polycrystalline silicon film with a film thickness in a range of 100 nm to 400 nm.

5. A method of manufacturing a semiconductor device according to claim 1 ; wherein the removing step is performed by an etch-back method.

6. A method of manufacturing a semiconductor device according to claim 1 ; wherein the removing step is performed by a CMP method.

7. A method of manufacturing a semiconductor device according to claim 1 ; wherein the introducing step comprises introducing the impurity into the polycrystalline silicon film at a concentration in a range of 1×10 14 /cm 2 to 5×10 15 /cm 2 .

8. A method of manufacturing a semiconductor device according to claim 1 ; wherein the resistance region of the resistor has a final film thickness in a range of 10 nm to 90 nm.

9. A method of manufacturing a semiconductor device, comprising the steps of:

forming a field insulating film on a surface of a semiconductor substrate;

forming a base insulating film on a surface of the field insulating film;

forming a polycrystalline silicon film on the base insulating film;

introducing an impurity into the polycrystalline silicon film;

patterning the polycrystalline silicon film into which the impurity is introduced so that a portion above the first oxide film becomes a resistance region of the resistor;

forming a TEOS-based oxide film on the patterned polycrystalline silicon film;

forming an SOG film on the TEOS-based oxide film; and

removing the SOG film and parts of the TEOS-based oxide film and the polycrystalline silicon film to form a planarized surface including surface portions of the TEOS-based oxide film and the polycrystalline silicon film.

10. A method according to claim 9 ; wherein the step of forming the base insulating film comprises forming the base insulating film with a convex shape.

11. A method according to claim 9 ; wherein the step of forming the polycrystalline silicon film comprises forming the polycrystalline silicon film with a film thickness in a range of 100 nm to 400 nm.

12. A method according to claim 9 , wherein the introducing step comprises introducing the impurity into the polycrystalline silicon film at a concentration in a range of 1×10 14 /cm 2 to 5×10 15 /cm 2 before the patterning step.