Semiconductor device to suppress leak current at an end of an isolation film
View Patent ↗A semiconductor device is formed on an SOI substrate having a silicon layer formed on an insulating layer. A transistor element is formed in the silicon layer of the SOI substrate. An isolation film for electrically isolating the transistor element is formed in the silicon layer of the SOI substrate by LOCOS so that a parasitic transistor is formed. Impurity diffusion regions are disposed at an end of the isolation film and at a boundary of a source region of the transistor element with a channel forming region. The impurity diffusion regions have a polarity opposite to that of the source region. A current path due to a parasitic channel in the parasitic transistor is suppressed.
1. A semiconductor device formed on an SOI substrate having a silicon layer formed on an insulating layer, the semiconductor device comprising:
a transistor element formed in the silicon layer of the SOI substrate;
an isolation film for electrically isolating the transistor element, the isolation film being formed in the silicon layer of the SOI substrate by LOCOS so that a parasitic transistor is formed;
impurity diffusion regions disposed at an end of the isolation film and at a boundary of a source region of the transistor element with a channel forming region, the impurity diffusion regions having a polarity opposite to that of the source region, so that a current path due to a parasitic channel in the parasitic transistor is suppressed; and
an active region containing the source region, the channel forming region and a drain region, and a gate electrode disposed over the active region;
wherein a length of the active region in a gate length direction is at least 2 μm and a length of each of the impurity diffusion regions in the direction of the source region is in the range of about 0.5 to 0.7 μm.
2. A semiconductor device according to claim 1 ; wherein each of the impurity diffusion regions is formed between the insulating layer of the SOI substrate and a bird's beak at the end of the isolation film.
3. A semiconductor device according to claim 1 ; wherein the transistor element is a full depletion type transistor.
4. A semiconductor device according to claim 3 ; wherein the polarity of the source region and a polarity of a polycrystalline silicon of a gate electrode of the transistor element are the same.
5. A semiconductor device comprising:
a silicon-on-insulator (SOI) substrate having a silicon layer formed on an insulating layer;
a transistor element formed in the silicon layer of the SOI substrate;
an isolation film for electrically isolating the transistor element, the isolation film being formed in the silicon layer of the SOI substrate by local oxidation of silicon so that a parasitic transistor is formed;
impurity diffusion regions formed at an end of the isolation film at two points each corresponding to a boundary of an impurity diffusion layer of the transistor element with a channel forming region so that a leak current due to a parasitic channel in the parasitic transistor is suppressed; and
an active region containing the impurity diffusion layer and the channel forming region, and a gate electrode disposed over the active region;
wherein a length of the active region in a gate length direction is at least 2 μm and a length of each of the impurity diffusion regions in the direction of the impurity diffusion layer is in the range of about 0.5 to 0.7 μm.
6. A semiconductor device according to claim 5 ; wherein the impurity diffusion regions have a polarity opposite to that of the impurity diffusion layer.
7. A semiconductor device according to claim 6 ; wherein the impurity diffusion layer is a source region of the transistor element.
8. A semiconductor device according to claim 5 ; wherein the impurity diffusion layer is a source region of the transistor element.
9. A semiconductor device according to claim 5 ; wherein each of the impurity diffusion regions is formed between the insulating layer of the SOI substrate and the end of the isolation film.
10. A semiconductor device according to claim 5 ; wherein the transistor element is a full depletion type transistor.
11. A semiconductor device according to claim 5 ; wherein a polarity of the impurity diffusion layer and a polarity of a polycrystalline silicon of a gate electrode of the transistor element are the same.
12. A semiconductor device according to claim 5 ; wherein the impurity diffusion layer is a source region of the transistor element.
13. A semiconductor device comprising:
a silicon-on-insulator (SOI) substrate having a silicon layer formed on an insulating layer;
a transistor element formed in the silicon layer of the SOI substrate;
an isolation film for electrically isolating the transistor element, the isolation film being formed in the silicon layer of the SOI substrate by local oxidation of silicon so that a parasitic transistor is formed;
impurity diffusion regions formed so as to fill regions between an end of the isolation film and the insulating layer of the sax substrate and extending from the end of the isolation film in the direction of a source region of the transistor element, so that a current path due to a parasitic channel in the parasitic transistor is suppressed; and
an active region containing the source region, the channel forming region and a drain region, and a gate electrode disposed over the active region;
wherein a length of the active region in a gate length direction is at least 2 μm and a length of each of the impurity diffusion regions in the direction of the source region is in the range of about 0.5 to 0.7 μm.
14. A semiconductor device according to claim 13 ; wherein the impurity diffusion regions have a polarity opposite Lo that of the source region.
15. A semiconductor device according to claim 13 ; wherein the transistor element is a full depletion type transistor.
16. A semiconductor device according to claim 13 ; wherein a polarity of the source region and a polarity of a polycrystalline silicon of a gate electrode of the transistor element are the same.