Electro-optical device and electronic apparatus
View Patent ↗An electro-optical device includes an insulating substrate, a switching element, at least one PIN diode, and at least one reflector. The switching element includes a first polysilicon semiconductor layer formed on the insulating substrate, and a gate electrode formed between the insulating substrate and the first semiconductor layer. Each of the at least one PIN diode includes a second polysilicon semiconductor layer formed on the insulating substrate. The at least one reflector is formed in the same layer as the gate electrode and opposite the second semiconductor layer or layers of the at least one PIN diode.
1. An electro-optical device comprising:
a display panel in which an element substrate that transmits light and an opposing substrate are arranged opposite to each other;
an illuminating unit that emits light onto the display panel from the element substrate side;
a pixel electrode formed in an effective display region of the display panel;
a switching element connected to the pixel electrode, the switching element including a first semiconductor layer formed on the element substrate;
at least one PIN type diode that includes a second semiconductor layer formed in the same layer as that of the switching element and detects a luminance of an ambient light entering from the opposing substrate side; and
at least one reflector opposing the second semiconductor layer of each PIN type diode, each reflector being formed between the second semiconductor layer and the element substrate,
wherein light from the illuminating unit that is incident on the display panel is modulated in the effective display region of the display panel.
2. The electro-optical device according to claim 1 , wherein the switching element includes a gate electrode formed between the first semiconductor layer and the element substrate, and wherein the reflector is formed in the same layer as the gate electrode.
3. The electro-optical device according to claim 1 , wherein the first and the second semiconductor layer includes a polysilicon layer.
4. The electro-optical device according to claim 1 , wherein the reflector faces an entire region of the second semiconductor layer that constitutes the PIN type diode.
5. The electro-optical device according to claim 1 , wherein a plurality of PIN type diodes are formed on the element substrate.
6. The electro-optical device according to claim 1 , wherein the reflector is connected to a predetermined fixed potential point.
7. The electro-optical device according to claim 6 , wherein the reflector is connected to an anode or a cathode of the PIN type diode.
8. The electro-optical device according to claim 1 , further comprising a shielding plate arranged between the PIN type diode and the illuminating unit and in a region that faces a light receiving element.
9. The electro-optical device according to claim 1 , wherein the structure is formed so that brightness of the illuminating unit can be controlled by using a luminance detection result of the PIN type diode.
10. The electro-optical device according to claim 1 , wherein the opposite substrate is provided with a shielding film that defines the effective display region, and
the shielding film includes an opening in a region in which the PIN type diode is provided.
11. An electronic apparatus comprising the electro-optical device according to claim 1 .