Waveguide photodetector with integrated electronics
View Patent ↗A germanium on silicon waveguide photodetector disposed on a silicon on insulator (SOI) substrate. The photodetector is incorporated into a section of a planar silicon waveguide on the substrate. The photodetector generates an electric current as an infrared optical signal travels through the photodetector.
1. A method for communicating signals to a semiconductor device using optical signals comprising:
sending an optical signal to an input of a germanium on silicon waveguide photodetector located on a semiconductor chip, said germanium on silicon waveguide photodetector comprising:
a waveguide comprising:
a core comprised of a germanium on silicon heterojunction stack comprising:
a silicon layer comprising substantially silicon for conducting light, and
a germanium layer comprising substantially germanium for conducting light; and
a cladding comprised of a plurality of dielectric materials;
an optical input;
a first plurality of conductive contacts coupled to said germanium layer; and
a second plurality of conductive contacts coupled to said silicon layer; and,
outputting an electrical signal through at least one of the second plurality of conductive contacts of the germanium on silicon waveguide photodetector to an input of a semiconductor device located on the semiconductor chip.
2. A method for communicating signals to a semiconductor device using optical signals comprising:
receiving an optical signal at an input of a germanium on silicon waveguide photodetector located on a semiconductor chip, said germanium on silicon waveguide photodetector comprising:
a waveguide comprising:
a core comprised of a germanium on silicon heterojunction stack comprising:
a silicon layer comprising substantially silicon for conducting light, and
a germanium layer comprising substantially germanium for conducting light; and
a cladding comprised of a plurality of dielectric materials;
an optical input;
a first plurality of conductive contacts coupled to said germanium layer; and
a second plurality of conductive contacts coupled to said silicon layer; and,
outputting an electrical signal through at least one of the second plurality of conductive contacts of the germanium on silicon waveguide photodetector to an input of a semiconductor device located on the semiconductor chip.
3. A method for communicating signals to a semiconductor device using optical signals comprising:
sending an optical signal to an input of a germanium on silicon waveguide photodetector located on a semiconductor chip, said germanium on silicon waveguide photodetector comprising:
a waveguide comprising:
a core comprised of a germanium on silicon heterojunction stack comprising:
a silicon layer comprising substantially silicon for conducting light, and
a germanium layer comprising substantially germanium for conducting light; and
a cladding comprised of a plurality of dielectric materials;
an optical input;
a first plurality of conductive contacts coupled to said germanium layer; and
a second plurality of conductive contacts coupled to said silicon layer; and,
outputting an electrical signal through at least one of the first plurality of conductive contacts of the germanium on silicon waveguide photodetector to an input of a semiconductor device located on the semiconductor chip.
4. A method for communicating signals to a semiconductor device using optical signals comprising:
receiving an optical signal at an input of a germanium on silicon waveguide photodetector located on a semiconductor chip, said germanium on silicon waveguide photodetector comprising:
a waveguide comprising:
a core comprised of a germanium on silicon heterojunction stack comprising:
a silicon layer comprising substantially silicon for conducting light, and
a germanium layer comprising substantially germanium for conducting light; and
a cladding comprised of a plurality of dielectric materials;
an optical input;
a first plurality of conductive contacts coupled to said germanium layer; and
a second plurality of conductive contacts coupled to said silicon layer; and,
outputting an electrical signal through at least one of the first plurality of conductive contacts of the germanium on silicon waveguide photodetector to an input of a semiconductor device located on the semiconductor chip.
5. A method for communicating signals to a semiconductor device using optical signals comprising:
sending an optical signal to an input of a germanium on silicon waveguide photodetector located on a semiconductor chip, said germanium on silicon waveguide photodetector comprising:
a waveguide comprising:
a core comprised of a germanium on silicon heterojunction stack comprising:
a silicon layer comprising substantially silicon for conducting light, and
a germanium layer comprising substantially germanium for absorbing light; and
a cladding comprised of a plurality of dielectric materials;
an optical input;
a first plurality of conductive contacts coupled to said germanium layer; and
a second plurality of conductive contacts coupled to said silicon layer; and,
outputting an electrical signal through at least one of the second plurality of conductive contacts of the germanium on silicon waveguide photodetector to an input of a semiconductor device located on the semiconductor chip.
6. A method for communicating signals to a semiconductor device using optical signals comprising:
receiving an optical signal at an input of a germanium on silicon waveguide photodetector located on a semiconductor chip, said germanium on silicon waveguide photodetector comprising:
a waveguide comprising:
a core comprised of a germanium on silicon heterojunction stack comprising:
a silicon layer comprising substantially silicon for conducting light, and
a germanium layer comprising substantially germanium for absorbing light; and
a cladding comprised of a plurality of dielectric materials;
an optical input;
a first plurality of conductive contacts coupled to said germanium layer; and
a second plurality of conductive contacts coupled to said silicon layer; and,
outputting an electrical signal through at least one of the second plurality of conductive contacts of the germanium on silicon waveguide photodetector to an input of a semiconductor device located on the semiconductor chip.