IP Library Granted Patent US 7,819,652
Granted Patent B2
US 7,819,652 · App. 11/710,431 · Granted Oct 26, 2010

Mold for nano-imprinting and method of manufacturing the same

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,819,652
App. No.
11/710,431
Granted
Oct 26, 2010
Kind
B2
Abstract

A nano-imprint mold and a method of manufacturing the same are provided, which can be used for replicating a nano-scaled structure to a polymer layer. The nano-imprint mold comprises: a substrate; a pattern portion having a prominence and depression pattern formed on the substrate; a hard layer formed of a material with a hardness higher than the pattern portion on a surface of the pattern portion; and a separation layer formed on a surface of the hard layer. In the nano-imprint mold of the present invention, an original pattern can be uniformly replicated even on a substrate with an irregular surface. Further, the pattern can be prevented from being damaged by pressure and being contaminated by synthetic resin, resulting in better accuracy and durability of the pattern.

Claims (11)

1. A nano-imprint mold comprising:

a substrate;

a pattern portion having a prominence and depression pattern formed on the substrate;

a hard layer formed of a material with a hardness higher than the pattern portion on a surface of the pattern portion; and

a separation layer formed on a surface of the hard layer,

wherein the substrate is formed of a material through which ultraviolet ray is permeable;

wherein the pattern portion has the prominence and depression pattern formed on a buffer layer covering an entire surface of the substrate, the buffer layer of the pattern portion and the prominence and depression pattern integrated therewith are made of an identical material, the buffer layer has a thickness less than 1 mm, and said thickness is at least twenty times more than that of the prominence and depression pattern; and

wherein the separation layer is formed of a Self Assembled Monolayer (SAM) based on organosilicon group.

2. The nano-imprint mold as claimed in claim 1 , wherein the pattern portion is formed of a material of an ultraviolet cured polymer.

3. The nano-imprint mold as claimed in claim 1 , wherein the hard layer is formed of a material selected from at least one of a silicon oxide and Indium Tin Oxide (ITO).

4. The nano-imprint mold as claimed in claim 1 , wherein the hard layer is formed of a material selected from at least one of Aluminum (Al), Chrome (Cr), Tantalum (Ta), or Nickel (Ni).

Assignments (3)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE ERRONEOUSLY FILED NO. 7255478 FROM SCHEDULE PREVIOUSLY RECORDED AT REEL: 028153 FRAME: 0689. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Oct 5, 2016
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 040001/0920 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 3, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SEAGATE TECHNOLOGY INTERNATIONAL
Reel/Frame 028153/0689 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 26, 2007
From: LEE, DU HYUN; SOHN, JIN SEUNG; LEE, BYUNG KYU; CHO, EUN HYOUNG
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 018988/0372 →