Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same
View Patent ↗Provided are a metal-polishing liquid that comprises an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent, and water; a method for producing it; and a polishing method of using it. Also provided are materials for the metal-polishing liquid, which include an oxidized-metal etchant, a protective film-forming agent, and a dissolution promoter for the protective film-forming agent.
1. A polishing method, comprising:
preparing a first constituent element;
preparing a second constituent element;
preparing a diluent;
mixing the first constituent element, second constituent element and diluent at the same time or in any order to prepare a metal-polishing liquid;
applying the metal-polishing liquid to a polishing pad set on a platen; and
polishing a surface of an article to be polished with the polishing pad, by moving the polishing pad and the surface of the article relatively to each other while keeping the surface of the article in contact with the polishing pad,
wherein the metal-polishing liquid comprises an ingredient group consisting of an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent and a dissolution promoter for the protective film-forming agent and water,
the first constituent element contains at least one ingredient of the ingredient group, and
the second constituent element is a concentrated liquid wherein at least one of the ingredients of the ingredient group, other than said at least one ingredient, is dissolved in water.
2. A polishing method, comprising:
preparing a first constituent element;
preparing a second constituent element;
preparing a diluent;
mixing the first constituent element, second constituent element and diluent at the same time or in any order to prepare a metal-polishing liquid;
applying the metal-polishing liquid to a polishing pad set on a platen; and
polishing a surface of an article to be polished with the polishing pad by moving the polishing pad and the surface of the article relatively to each other while keeping the surface of the article in contact with the polishing pad,
wherein the metal-polishing liquid comprises an ingredient group consisting of an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent and water,
the first constituent element contains the oxidizing agent, and
the second constituent element is a concentrated liquid wherein the protective film-forming agent and the dissolution promoter for the protective film-forming agent are contained therein and dissolved in water.
3. A polishing method, comprising:
preparing a first constituent element;
preparing a second constituent element;
preparing a diluent;
mixing the first constituent element, second constituent element and diluent at the same time or in any order to prepare a metal-polishing liquid;
applying the metal-polishing liquid to a polishing pad set on a platen; and
polishing a surface of an article to be polished with the polishing pad by moving the polishing pad and the surface of the article relatively to each other while keeping the surface of the article in contact with the polishing pad,
wherein the metal-polishing liquid comprises an ingredient group consisting of an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent and water,
the first constituent element contains the oxidizing agent, and
the second constituent element is a concentrated liquid wherein the oxidized-metal etchant, the protective film-forming agent and the dissolution promoter for the protective film-forming agent are contained therein and dissolved in water.
4. A polishing method, comprising:
preparing a first constituent element;
preparing a second constituent element;
preparing a diluent;
mixing the first constituent element, second constituent element and diluent at the same time or in any order to prepare a metal-polishing liquid;
applying the metal-polishing liquid to a polishing pad set on a platen; and
polishing a surface of an article to be polished with the polishing pad by moving the polishing pad and the surface of the article relatively to each other while keeping the surface of the article in contact with the polishing pad,
wherein the metal-polishing liquid comprises an ingredient group consisting of an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent and water,
the first constituent element contains the oxidizing agent, the protective film-forming agent, and the dissolution promoter for the protective film-forming agent,
the second constituent element contains the oxidized-metal etchant, the protective film-forming agent and the dissolution promoter for the protective film-forming agent, and
at least one of the first and second constituent elements is a concentrated liquid.
5. A polishing method, comprising:
preparing a first constituent element;
preparing a second constituent element;
preparing a diluent;
mixing the first constituent element, second constituent element and diluent at the same time or in any order to prepare a metal-polishing liquid;
applying the metal-polishing liquid to a polishing pad set on a platen; and
polishing a surface of an article to be polished with the polishing pad by moving the polishing pad and the surface of the article relatively to each other while keeping the surface of the article in contact with the polishing pad,
wherein the metal-polishing liquid comprises an ingredient group consisting of an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent and water,
the first constituent element contains at least one ingredient selected from a group consisting of the oxidizing agent and the oxidized-metal etchant, and
the second constituent element is a concentrated liquid wherein the protective film-forming agent and the dissolution promoter for the protective film-forming agent are contained therein and dissolved in water.
6. The polishing method according to claim 5 , further comprising preparing a third constituent element,
wherein the third constituent element contains at least one ingredient which is not contained in the first constituent element, and is selected from a group consisting of the oxidizing agent and the oxidized-metal etchant.
7. The polishing method according to claim 6 , wherein at least one of the first constituent element and the third constituent element contains the protective film-forming agent.
8. The polishing method according to claim 5 , wherein the preparation of the metal-polishing liquid includes mixing the first constituent element and the second constituent element to obtain a mixture, and diluting the mixture with the diluent.
9. The polishing method according to claim 5 , wherein the preparation of the metal-polishing liquid includes diluting at least one of the first constituent element and the second constituent element with the diluent.
10. The polishing method according to claim 5 , wherein the diluent is water.
11. The polishing method according to claim 5 , wherein the dissolution promoter for the protective film-forming agent is a surfactant.
12. The polishing method according to claim 11 , wherein the surfactant is at least one selected from the group consisting of esters, ethers, polysaccharides, salts of amino acids, polycarboxylic acids, salts of polycarboxylic acids, vinyl polymers, sulfonic acids, sulfonates, and amides.
13. The polishing method according to claim 5 , wherein the dissolution promoter for the protective film-forming agent is a solvent in which the solubility of the protective film-forming agent is at least 25 g/liter.
14. The polishing method according to claim 13 , wherein the solvent is a good solvent of the solubility of the protective film-forming agent.
15. The polishing method according to claim 13 , wherein the solvent is at least one selected from the group consisting of alcohols, ethers and ketones.
16. The polishing method according to claim 5 , wherein the metal-polishing liquid further comprises abrasive grains.
17. The polishing method according to claim 5 , wherein said article includes a metal film coating a substrate, and wherein the surface of the article to be polished is a surface of the metal film.
18. The polishing method according to claim 17 , wherein the metal film is a metal film containing copper.
19. The polishing method according to claim 1 , wherein the preparation of the metal-polishing liquid includes mixing the first constituent element and the second constituent element to obtain a mixture, and diluting the mixture with the diluent.
20. The polishing method according to claim 1 , wherein the preparation of the metal-polishing liquid includes diluting at least one of the first constituent element and the second constituent element with the diluent.
21. The polishing method according to claim 1 , wherein the diluent is water.
22. The polishing method according to claim 1 , wherein the dissolution promoter for the protective film-forming agent is a surfactant.
23. The polishing method according to claim 22 , wherein the surfactant is at least one selected from the group consisting of esters, ethers, polysaccharides, salts of amino acids, polycarboxylic acids, salts of polycarboxylic acids, vinyl polymers, sulfonic acids, sulfonates, and amides.
24. The polishing method according to claim 1 , wherein the dissolution promoter for the protective film-forming agent is a solvent in which the solubility of the protective film-forming agent is at least 25 g/liter.
25. The polishing method according to claim 24 , wherein the solvent is a good solvent of the solubility of the protective film-forming agent.
26. The polishing method according to claim 24 , wherein the solvent is at least one selected from the group consisting of alcohols, ethers and ketones.
27. The polishing method according to claim 1 , wherein the metal-polishing liquid further comprises abrasive grains.
28. The polishing method according to claim 1 , wherein said article includes a metal film coating a substrate, and wherein the surface of the article to be polished is a surface of the metal film.
29. The polishing method according to claim 28 , wherein the metal film is a metal film containing copper.
30. The polishing method according to claim 4 , wherein said article includes a metal film coating a substrate, and wherein the surface of the article to be polished is a surface of the metal film.
31. The polishing method according to claim 30 , wherein the metal film is a metal film containing copper.
32. The polishing method according to claim 3 , wherein said article includes a metal film coating a substrate, and wherein the surface of the article to be polished is a surface of the metal film.
33. The polishing method according to claim 32 , wherein the metal film is a metal film containing copper.
34. The polishing method according to claim 2 , wherein said article includes a metal film coating a substrate, and wherein the surface of the article to be polished is a surface of the metal film.
35. The polishing method according to claim 34 , wherein the metal film is a metal film containing copper.