Current drive circuit
View Patent ↗In the current drive section, a wiring for setting a substrate potential is separately provided from a wiring of a power potential VDD so that substrate potentials of P-channel MOS transistors within respective drive cells become the same regardless of the distance from the power pad (power potential VDD) to each drive cell.
1. A current drive circuit comprising:
a first power source pad provided on a chip;
a second power source pad provided on said chip at a different position from said first power source pad;
first wiring which is lead from the first power source pad;
second wiring which is lead from the second power source pad; and
a current drive section, which has a plurality of transistor elements whose one ends are connected in parallel to the first wiring such that each of said plurality of transistor elements is turned on or off in response to a signal supplied from a gate of each of said plurality of transistor elements, wherein the second wiring is connected to substrate terminal of the plurality of transistor elements of the current drive section;
wherein an end of the first wiring is connected to an end of the second wiring.
2. The current drive circuit according to claim 1 , further comprising a first resistance section having one or a plurality of resistance elements on the second wiring, wherein the first wiring and the second wiring are connected to the transistor element which is positioned farthest from the first power source pad, out of the plurality of transistor elements.
3. The current drive circuit according to claim 1 , wherein the plurality of transistor elements of the current drive section are formed by a common substrate or a well region.
4. The current drive circuit according to claim 1 , wherein a potential supplied to the first power source pad is equal to a potential supplied to the second power source pad.
5. A current drive circuit comprising:
a first terminal which is set to a first reference potential;
a fourth terminal which is set to a fourth reference potential;
a main current drive section, which has a plurality of first transistor elements whose source electrodes and substrates are connected in parallel to the first terminal, for generating drain current as output current from each said first transistor element in accordance with a gate potential; and
a sub current drive section which has a plurality of second transistor elements associated with the plurality of first transistor elements respectively and whose source electrodes and substrates are connected in parallel to the fourth terminal, the gate electrode of each said second transistor element being connected to the source electrode of said associated first transistor element.
6. The current drive circuit according to claim 5 , wherein the substrate of each said second transistor element of the sub current drive section is connected to the source of the associated first transistor element of the main current drive section.
7. A current drive circuit comprising:
a first terminal which is set to a first reference potential;
first wiring which is led from the first terminal;
a fifth terminal which is set to a fifth reference potential lower than the first reference potential;
a current drive section, which has a plurality of transistor elements whose source electrodes are connected in parallel to the first wiring, for generating drain current from each said transistor element in accordance with a gate potential which is applied to gate electrodes of the plurality of transistor elements; and
a potential setting section which causes the gate potentials of the plurality of transistor elements to decrease sequentially starting from the transistor element proximal to the first terminal to the transistor element distal from the first terminal;
wherein the potential setting section comprises a second resistance section having a plurality of resistance elements which are provided serially between the first terminal and the fifth terminal, and a node between each said two adjacent resistance elements and a gate electrode of a corresponding one of the plurality of transistor elements is connected to each other.
8. The current drive circuit according to claim 7 , wherein the potential setting section comprises:
a third resistance section having a plurality of resistance elements which are provided in parallel between the first terminal and the fifth terminal and have resistance values different from one another; and
a control section which selects one said resistance element from the third resistance section to control the gate potentials of the plurality of transistor elements in accordance with a request value for the output current.